SUBJECT: main
TITLE: Table of Contents
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
SUBTOPIC: SPICE:INTRODUCTION
SUBTOPIC: SPICE:CIRCUIT DESCRIPTION
SUBTOPIC: SPICE:CIRCUIT ELEMENTS AND MODELS
SUBTOPIC: SPICE:ANALYSES AND OUTPUT CONTROL
SUBTOPIC: SPICE:INTERACTIVE INTERPRETER
SUBTOPIC: SPICE:BIBLIOGRAPHY
SUBTOPIC: SPICE:APPENDIX A
SUBTOPIC: SPICE:APPENDIX B
SUBJECT: INTRODUCTION
TITLE: INTRODUCTION
TEXT: H
TEXT: H 1.  INTRODUCTION
TEXT: H
TEXT: H
TEXT: H      SPICE is a general-purpose circuit  simulation  program
TEXT: H for  nonlinear  dc,  nonlinear transient, and linear ac ana-
TEXT: H lyses.  Circuits may contain resistors,  capacitors,  induc-
TEXT: H tors,  mutual  inductors,  independent  voltage  and current
TEXT: H sources, four types of dependent sources, lossless and lossy
TEXT: H transmission lines (two separate implementations), switches,
TEXT: H uniform distributed RC lines, and the five most common  sem-
TEXT: H iconductor  devices:  diodes, BJTs, JFETs, MESFETs, and MOS-
TEXT: H FETs.
TEXT: H
TEXT: H      The SPICE3 version is based  directly  on  SPICE  2G.6.
TEXT: H While  SPICE3 is being developed to include new features, it
TEXT: H continues to support those  capabilities  and  models  which
TEXT: H remain in extensive use in the SPICE2 program.
TEXT: H
TEXT: H      SPICE has built-in models for  the  semiconductor  dev-
TEXT: H ices,  and  the  user  need specify only the pertinent model
TEXT: H parameter values.  The model for the BJT  is  based  on  the
TEXT: H integral-charge  model  of Gummel and Poon;  however, if the
TEXT: H Gummel- Poon parameters are not specified, the model reduces
TEXT: H to  the  simpler  Ebers-Moll model.  In either case, charge-
TEXT: H storage effects, ohmic resistances, and a  current-dependent
TEXT: H output  conductance may be included.  The diode model can be
TEXT: H used for either junction diodes or Schottky barrier  diodes.
TEXT: H The  JFET  model  is  based on the FET model of Shichman and
TEXT: H Hodges.   Six  MOSFET  models  are  implemented:   MOS1   is
TEXT: H described by a square-law I-V characteristic, MOS2 [1] is an
TEXT: H analytical model, while MOS3 [1] is a semi-empirical  model;
TEXT: H MOS6  [2]  is a simple analytic model accurate in the short-
TEXT: H channel region; MOS4 [3,  4]  and  MOS5  [5]  are  the  BSIM
TEXT: H (Berkeley Short-channel IGFET Model) and BSIM2.  MOS2, MOS3,
TEXT: H and MOS4 include second-order effects such as channel-length
TEXT: H modulation,   subthreshold   conduction,  scattering-limited
TEXT: H velocity  saturation,  small-size   effects,   and   charge-
TEXT: H controlled capacitances.
SUBTOPIC: SPICE:TYPES OF ANALYSIS
SUBTOPIC: SPICE:ANALYSIS AT DIFFERENT TEMPERATURES
SUBTOPIC: SPICE:CONVERGENCE

SUBJECT: TYPES OF ANALYSIS
TITLE: TYPES OF ANALYSIS
TEXT: H
TEXT: H 1.1.  TYPES OF ANALYSIS
TEXT: H
SUBTOPIC: SPICE:DC Analysis
SUBTOPIC: SPICE:AC SmallSignal Analysis
SUBTOPIC: SPICE:Transient Analysis
SUBTOPIC: SPICE:PoleZero Analysis
SUBTOPIC: SPICE:SmallSignal Distortion Analysis
SUBTOPIC: SPICE:Sensitivity Analysis
SUBTOPIC: SPICE:Noise Analysis

SUBJECT: DC Analysis
TITLE: DC Analysis
TEXT: H
TEXT: H 1.1.1.  DC Analysis
TEXT: H
TEXT: H
TEXT: H      The dc analysis portion  of  SPICE  determines  the  dc
TEXT: H operating  point  of  the circuit with inductors shorted and
TEXT: H capacitors opened.  The dc analysis options are specified on
TEXT: H the  .DC,  .TF,  and  .OP  control  lines.  A dc analysis is
TEXT: H automatically performed prior to  a  transient  analysis  to
TEXT: H determine  the transient initial conditions, and prior to an
TEXT: H ac  small-signal  analysis  to  determine  the   linearized,
TEXT: H small-signal  models  for  nonlinear devices.  If requested,
TEXT: H the dc small-signal value of a transfer function  (ratio  of
TEXT: H output variable to input source), input resistance, and out-
TEXT: H put resistance is also computed as a part of  the  dc  solu-
TEXT: H tion.   The  dc  analysis  can  also  be used to generate dc
TEXT: H transfer curves:  a specified independent voltage or current
TEXT: H source  is  stepped  over  a user-specified range and the dc
TEXT: H output variables  are  stored  for  each  sequential  source
TEXT: H value.
TEXT: H

SUBJECT: AC SmallSignal Analysis
TITLE: AC Small-Signal Analysis
TEXT: H
TEXT: H 1.1.2.  AC Small-Signal Analysis
TEXT: H
TEXT: H
TEXT: H      The ac small-signal portion of SPICE  computes  the  ac
TEXT: H output  variables  as  a function of frequency.  The program
TEXT: H first computes the dc operating point  of  the  circuit  and
TEXT: H determines  linearized,  small-signal  models for all of the
TEXT: H nonlinear devices in the circuit.  The resultant linear cir-
TEXT: H cuit  is  then  analyzed over a user-specified range of fre-
TEXT: H quencies.   The  desired  output  of  an  ac  small-  signal
TEXT: H analysis is usually a transfer function (voltage gain, tran-
TEXT: H simpedance, etc).  If the circuit has only one ac input,  it
TEXT: H is  convenient to set that input to unity and zero phase, so
TEXT: H that output variables have the same value  as  the  transfer
TEXT: H function of the output variable with respect to the input.
TEXT: H

SUBJECT: Transient Analysis
TITLE: Transient Analysis
TEXT: H
TEXT: H 1.1.3.  Transient Analysis
TEXT: H
TEXT: H      The transient analysis portion of  SPICE  computes  the
TEXT: H transient  output  variables  as  a  function of time over a
TEXT: H user-specified time interval.  The  initial  conditions  are
TEXT: H automatically  determined  by  a  dc  analysis.  All sources
TEXT: H which are not time dependent (for example,  power  supplies)
TEXT: H are  set  to their dc value.  The transient time interval is
TEXT: H specified on a .TRAN control line.
TEXT: H

SUBJECT: PoleZero Analysis
TITLE: Pole-Zero Analysis
TEXT: H
TEXT: H 1.1.4.  Pole-Zero Analysis
TEXT: H
TEXT: H
TEXT: H      The pole-zero analysis portion of  SPICE  computes  the
TEXT: H poles and/or zeros in the small-signal ac transfer function.
TEXT: H The program first computes the dc operating point  and  then
TEXT: H determines  the  linearized, small-signal models for all the
TEXT: H nonlinear devices in the circuit.  This circuit is then used
TEXT: H to find the poles and zeros of the transfer function.
TEXT: H
TEXT: H      Two types of transfer functions are allowed  :  one  of
TEXT: H the  form  (output voltage)/(input voltage) and the other of
TEXT: H the form (output voltage)/(input current).  These two  types
TEXT: H of  transfer  functions cover all the cases and one can find
TEXT: H the poles/zeros of functions like input/output impedance and
TEXT: H voltage  gain.   The input and output ports are specified as
TEXT: H two pairs of nodes.
TEXT: H
TEXT: H      The pole-zero analysis works  with  resistors,  capaci-
TEXT: H tors,   inductors,  linear-controlled  sources,  independent
TEXT: H sources, BJTs,  MOSFETs,  JFETs  and  diodes.   Transmission
TEXT: H lines are not supported.
TEXT: H
TEXT: H      The method used in the analysis is a sub-optimal numer-
TEXT: H ical  search.  For large circuits it may take a considerable
TEXT: H time or fail to find all poles and  zeros.   For  some  cir-
TEXT: H cuits,  the  method  becomes  "lost"  and finds an excessive
TEXT: H number of poles or zeros.
TEXT: H

SUBJECT: SmallSignal Distortion Analysis
TITLE: Small-Signal Distortion Analysis
TEXT: H
TEXT: H 1.1.5.  Small-Signal Distortion Analysis
TEXT: H
TEXT: H
TEXT: H      The  distortion  analysis  portion  of  SPICE  computes
TEXT: H steady-state harmonic and intermodulation products for small
TEXT: H input signal magnitudes.  If signals of a  single  frequency
TEXT: H are  specified  as  the  input  to  the circuit, the complex
TEXT: H values of the second and third harmonics are  determined  at
TEXT: H every  point  in  the  circuit.  If there are signals of two
TEXT: H frequencies input to the circuit, the analysis finds out the
TEXT: H complex  values  of  the  circuit  variables  at the sum and
TEXT: H difference of the input frequencies, and at  the  difference
TEXT: H of  the  smaller  frequency  from the second harmonic of the
TEXT: H larger frequency.
TEXT: H
TEXT: H      Distortion analysis is supported for the following non-
TEXT: H linear  devices: diodes (DIO), BJT, JFET, MOSFETs (levels 1,
TEXT: H 2, 3, 4/BSIM1, 5/BSIM2, and 6) and MESFETS.  All linear dev-
TEXT: H ices are automatically supported by distortion analysis.  If
TEXT: H there are switches present in the circuit, the analysis con-
TEXT: H tinues  to  be  accurate provided the switches do not change
TEXT: H state under the small excitations used for distortion calcu-
TEXT: H lations.
TEXT: H

SUBJECT: Sensitivity Analysis
TITLE: Sensitivity Analysis
TEXT: H
TEXT: H 1.1.6.  Sensitivity Analysis
TEXT: H
TEXT: H
TEXT: H      Spice3 will calculate  either  the  DC  operating-point
TEXT: H sensitivity  or the AC small-signal sensitivity of an output
TEXT: H variable with respect to all  circuit  variables,  including
TEXT: H model  parameters.   Spice  calculates  the difference in an
TEXT: H output variable (either a node voltage or a branch  current)
TEXT: H by  perturbing  each parameter of each device independently.
TEXT: H Since the method is a numerical approximation,  the  results
TEXT: H may  demonstrate  second  order  affects in highly sensitive
TEXT: H parameters, or may fail to show very low but non-zero sensi-
TEXT: H tivity.   Further, since each variable is perturb by a small
TEXT: H fraction of its value, zero-valued parameters are not analy-
TEXT: H ized  (this  has  the  benefit of reducing what is usually a
TEXT: H very large amount of data).
TEXT: H

SUBJECT: Noise Analysis
TITLE: Noise Analysis
TEXT: H
TEXT: H 1.1.7.  Noise Analysis
TEXT: H
TEXT: H
TEXT: H      The noise  analysis  portion  of  SPICE  does  analysis
TEXT: H device-generated noise for the given circuit.  When provided
TEXT: H with an input source and an output port, the analysis calcu-
TEXT: H lates the noise contributions of each device (and each noise
TEXT: H generator within the device) to the output port voltage.  It
TEXT: H also  calculates  the input noise to the circuit, equivalent
TEXT: H to the output noise referred to the specified input  source.
TEXT: H This  is done for every frequency point in a specified range
TEXT: H - the calculated value of the noise corresponds to the spec-
TEXT: H tral  density of the circuit variable viewed as a stationary
TEXT: H gaussian stochastic process.
TEXT: H
TEXT: H      After  calculating  the   spectral   densities,   noise
TEXT: H analysis  integrates  these  values  over the specified fre-
TEXT: H quency range to arrive at the  total  noise  voltage/current
TEXT: H (over   this   frequency   range).   This  calculated  value
TEXT: H corresponds to the variance of the circuit  variable  viewed
TEXT: H as a stationary gaussian process.

SUBJECT: ANALYSIS AT DIFFERENT TEMPERATURES
TITLE: ANALYSIS AT DIFFERENT TEMPERATURES
TEXT: H
TEXT: H 1.2.  ANALYSIS AT DIFFERENT TEMPERATURES
TEXT: H
TEXT: H
TEXT: H      All input data for SPICE is assumed to have been  meas-
TEXT: H                                     o
TEXT: H ured  at a nominal temperature of 27 C, which can be changed
TEXT: H by use of the TNOM parameter on the  .OPTION  control  line.
TEXT: H This  value  can  further be overridden for any device which
TEXT: H models temperature effects by specifying the TNOM  parameter
TEXT: H on the model itself.  The circuit simulation is performed at
TEXT: H                    o
TEXT: H a temperature of 27 C, unless overridden by a TEMP parameter
TEXT: H on  the  .OPTION  control  line.   Individual  instances may
TEXT: H further override the circuit temperature through the specif-
TEXT: H ication of a TEMP parameter on the instance.
TEXT: H
TEXT: H      Temperature dependent support is  provided  for  resis-
TEXT: H tors,  diodes,  JFETs,  BJTs, and level 1, 2, and 3 MOSFETs.
TEXT: H BSIM (levels 4 and 5) MOSFETs have an alternate  temperature
TEXT: H dependency  scheme which adjusts all of the model parameters
TEXT: H before input to SPICE.  For details of the BSIM  temperature
TEXT: H adjustment, see [6] and [7].
TEXT: H
TEXT: H
TEXT: H      Temperature appears explicitly in the exponential terms
TEXT: H of  the BJT and diode model equations.  In addition, satura-
TEXT: H tion currents have a built-in temperature  dependence.   The
TEXT: H temperature  dependence of the saturation current in the BJT
TEXT: H models is determined by:
TEXT: H
TEXT: H                              XTI
TEXT: H                          |T |        | E q(T  T )|
TEXT: H                            1            g   1  0
TEXT: H          I (T ) = I (T ) |--|     exp|-----------|
TEXT: H           S  1     S  0
TEXT: H                          |T |        |k (T  - T )|
TEXT: H                            0              1    0
TEXT: H
TEXT: H
TEXT: H
TEXT: H where k is Boltzmann's constant,  q  is  the  electronic
TEXT: H charge, E  is the energy gap which is a model parameter,
TEXT: H          G
TEXT: H and XTI is the saturation current  temperature  exponent
TEXT: H (also a model parameter, and usually equal to 3).
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The temperature dependence of forward and reverse  beta
TEXT: H is according to the formula:
TEXT: H
TEXT: H                                      XTB
TEXT: H                                  |T |
TEXT: H                                    1
TEXT: H                    B(T ) = B(T ) |--|
TEXT: H                       1       0
TEXT: H                                  |T |
TEXT: H                                    0
TEXT: H
TEXT: H
TEXT: H
TEXT: H where T  and T  are in degrees  Kelvin,  and  XTB  is  a
TEXT: H        1      0
TEXT: H user-supplied  model  parameter.  Temperature effects on
TEXT: H beta are carried out by appropriate  adjustment  to  the
TEXT: H values  of  B , I  , B , and I   (spice model parameters
TEXT: H              F   SE   R       SC
TEXT: H BF, ISE, BR, and ISC, respectively).
TEXT: H
TEXT: H
TEXT: H
TEXT: H      Temperature dependence of the saturation current in the
TEXT: H junction diode model is determined by:
TEXT: H
TEXT: H                             XTI
TEXT: H                             ---
TEXT: H                              N
TEXT: H                         |T |        |  E q(T  T ) |
TEXT: H                           1             g   1  0
TEXT: H         I (T ) = I (T ) |--|     exp|-------------|
TEXT: H          S  1     S  0
TEXT: H                         |T |        |N k (T  - T )|
TEXT: H                           0                1    0
TEXT: H
TEXT: H
TEXT: H
TEXT: H where N is the emission coefficient, which  is  a  model
TEXT: H parameter,  and  the other symbols have the same meaning
TEXT: H as above.  Note that for Schottky  barrier  diodes,  the
TEXT: H value  of  the  saturation current temperature exponent,
TEXT: H XTI, is usually 2.
TEXT: H
TEXT: H
TEXT: H
TEXT: H      Temperature appears explicitly in the value of junction
TEXT: H potential, U (in spice PHI), for all the device models.  The
TEXT: H temperature dependence is determined by:
TEXT: H
TEXT: H
TEXT: H                                   | N N   |
TEXT: H                                      a d
TEXT: H                          kT       |------ |
TEXT: H                   U(T) = --  log        2
TEXT: H                           q     e |N (T)  |
TEXT: H                                     i
TEXT: H
TEXT: H
TEXT: H where k is Boltzmann's constant,  q  is  the  electronic
TEXT: H charge,  N   is the acceptor impurity density, N  is the
TEXT: H           a                                     d
TEXT: H donor impurity density, N  is the intrinsic carrier con-
TEXT: H                          i
TEXT: H centration, and E  is the energy gap.
TEXT: H                  g
TEXT: H
TEXT: H
TEXT: H
TEXT: H      Temperature appears explicitly in the value of  surface
TEXT: H mobility, M  (or UO), for the MOSFET model.  The temperature
TEXT: H            0
TEXT: H dependence is determined by:
TEXT: H
TEXT: H
TEXT: H                                M (T )
TEXT: H                                 0  0
TEXT: H                       M (T) = -------
TEXT: H                        0          1.5
TEXT: H                               | T|
TEXT: H                               |--|
TEXT: H                               |T |
TEXT: H                                 0
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The effects of temperature on resistors is  modeled  by
TEXT: H the formula:
TEXT: H
TEXT: H
TEXT: H                                                    2
TEXT: H       R(T) = R(T ) [1 + TC  (T - T ) + TC  (T - T ) ]
TEXT: H                 0         1       0      2       0
TEXT: H
TEXT: H
TEXT: H
TEXT: H where T is the circuit temperature, T   is  the  nominal
TEXT: H                                      0
TEXT: H temperature,  and TC  and TC  are the first- and second-
TEXT: H                     1       2
TEXT: H order temperature coefficients.
TEXT: H

SUBJECT: CONVERGENCE
TITLE: CONVERGENCE
TEXT: H
TEXT: H 1.3.  CONVERGENCE
TEXT: H
TEXT: H
TEXT: H      Both dc and transient  solutions  are  obtained  by  an
TEXT: H iterative  process which is terminated when both of the fol-
TEXT: H lowing conditions hold:
TEXT: H
TEXT: H
TEXT: H 1)   The nonlinear branch  currents  converge  to  within  a
TEXT: H      tolerance of 0.1% or 1 picoamp (1.0e-12 Amp), whichever
TEXT: H      is larger.
TEXT: H
TEXT: H 2)   The node voltages converge to  within  a  tolerance  of
TEXT: H      0.1% or 1 microvolt (1.0e-6 Volt), whichever is larger.
TEXT: H
TEXT: H      Although the algorithm used in SPICE has been found  to
TEXT: H be  very  reliable,  in some cases it fails to converge to a
TEXT: H solution.  When this failure occurs, the program  terminates
TEXT: H the job.
TEXT: H
TEXT: H      Failure to converge in dc analysis is usually due to an
TEXT: H error  in specifying circuit connections, element values, or
TEXT: H model parameter values.  Regenerative switching circuits  or
TEXT: H circuits  with  positive feedback probably will not converge
TEXT: H in the dc analysis unless the OFF option is used for some of
TEXT: H the  devices  in  the feedback path, or the .NODESET control
TEXT: H line is used to force the circuit to converge to the desired
TEXT: H state.

SUBJECT: CIRCUIT DESCRIPTION
TITLE: CIRCUIT DESCRIPTION
TEXT: H
TEXT: H 2.  CIRCUIT DESCRIPTION
SUBTOPIC: SPICE:GENERAL STRUCTURE AND CONVENTIONS
SUBTOPIC: SPICE:TITLE LINE COMMENT LINES AND .END LINE
SUBTOPIC: SPICE:DEVICE MODELS
SUBTOPIC: SPICE:SUBCIRCUITS
SUBTOPIC: SPICE:COMBINING FILES

SUBJECT: GENERAL STRUCTURE AND CONVENTIONS
TITLE: GENERAL STRUCTURE AND CONVENTIONS
TEXT: H
TEXT: H 2.1.  GENERAL STRUCTURE AND CONVENTIONS
TEXT: H
TEXT: H
TEXT: H      The circuit to be analyzed is described to SPICE  by  a
TEXT: H set  of element lines, which define the circuit topology and
TEXT: H element values, and a set of control lines, which define the
TEXT: H model  parameters  and  the run controls.  The first line in
TEXT: H the input file must be the title, and the last line must  be
TEXT: H ".END".   The  order  of  the  remaining  lines is arbitrary
TEXT: H (except, of course, that continuation lines must immediately
TEXT: H follow the line being continued).
TEXT: H
TEXT: H      Each element in the circuit is specified by an  element
TEXT: H line  that  contains  the element name, the circuit nodes to
TEXT: H which the element is connected, and the values of the param-
TEXT: H eters  that  determine the electrical characteristics of the
TEXT: H element.  The first letter of the element name specifies the
TEXT: H element  type.   The  format  for the SPICE element types is
TEXT: H given in what follows.  The strings  XXXXXXX,  YYYYYYY,  and
TEXT: H ZZZZZZZ denote arbitrary alphanumeric strings.  For example,
TEXT: H a resistor name must begin with the letter R and can contain
TEXT: H one  or  more  characters.   Hence,  R,  R1,  RSE, ROUT, and
TEXT: H R3AC2ZY are valid resistor names.  Details of each  type  of
TEXT: H device are supplied in a following section.
TEXT: H
TEXT: H      Fields on a line are separated by one or more blanks, a
TEXT: H comma,  an equal ('=') sign, or a left or right parenthesis;
TEXT: H extra spaces are ignored.  A line may be continued by enter-
TEXT: H ing  a  '+'  (plus) in column 1 of the following line; SPICE
TEXT: H continues reading beginning with column 2.
TEXT: H
TEXT: H      A name field must begin with a letter (A through Z) and
TEXT: H cannot contain any delimiters.
TEXT: H
TEXT: H
TEXT: H      A number field may be an integer  field  (12,  -44),  a
TEXT: H floating  point field (3.14159), either an integer or float-
TEXT: H ing point number followed by  an  integer  exponent  (1e-14,
TEXT: H 2.65e3),  or  either  an  integer or a floating point number
TEXT: H followed by one of the following scale factors:
TEXT: H
TEXT: H       12         9                    6         3               -6
TEXT: H T = 10     G = 10             Meg = 10    K = 10      mil = 25.4
TEXT: H       -3                 -6         -9          -12         -15
TEXT: H m = 10     u (or  M) = 10     n = 10      p = 10      f = 10
TEXT: H
TEXT: H
TEXT: H
TEXT: H Letters immediately following a number that  are  not  scale
TEXT: H factors  are  ignored,  and  letters immediately following a
TEXT: H scale factor are ignored.  Hence, 10, 10V, 10Volts, and 10Hz
TEXT: H all  represent  the  same number, and M, MA, MSec, and MMhos
TEXT: H all represent  the  same  scale  factor.   Note  that  1000,
TEXT: H 1000.0,  1000Hz,  1e3, 1.0e3, 1KHz, and 1K all represent the
TEXT: H same number.
TEXT: H
TEXT: H      Nodes names may be arbitrary  character  strings.   The
TEXT: H datum  (ground) node must be named '0'.  Note the difference
TEXT: H in SPICE3 where the nodes are treated as  character  strings
TEXT: H and not evaluated as numbers, thus '0' and '00' are distinct
TEXT: H nodes in SPICE3 but not in SPICE2.  The circuit cannot  con-
TEXT: H tain  a  loop of voltage sources and/or inductors and cannot
TEXT: H contain a cut-set  of  current  sources  and/or  capacitors.
TEXT: H Each  node  in  the  circuit  must have a dc path to ground.
TEXT: H Every node must have at least  two  connections  except  for
TEXT: H transmission line nodes (to permit unterminated transmission
TEXT: H lines) and MOSFET substrate nodes (which have  two  internal
TEXT: H connections anyway).
TEXT: H

SUBJECT: TITLE LINE COMMENT LINES AND .END LINE
TITLE: TITLE LINE, COMMENT LINES AND .END LINE
TEXT: H
TEXT: H 2.2.  TITLE LINE, COMMENT LINES AND .END LINE
TEXT: H
SUBTOPIC: SPICE:Title Line
SUBTOPIC: SPICE:.END Line
SUBTOPIC: SPICE:Comments

SUBJECT: Title Line
TITLE: Title Line
TEXT: H
TEXT: H 2.2.1.  Title Line
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     POWER AMPLIFIER CIRCUIT
TEXT: H     TEST OF CAM CELL
TEXT: H
TEXT: H
TEXT: H      The title line must be the first  in  the  input  file.
TEXT: H Its  contents  are  printed verbatim as the heading for each
TEXT: H section of output.
TEXT: H
TEXT: H

SUBJECT: .END Line
TITLE: .END Line
TEXT: H
TEXT: H 2.2.2.  .END Line
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     .END
TEXT: H
TEXT: H
TEXT: H      The "End" line must always be the last in the input
TEXT: H file.   Note  that the period is an integral part of the
TEXT: H name.
TEXT: H
TEXT: H
TEXT: H

SUBJECT: Comments
TITLE: Comments
TEXT: H
TEXT: H 2.2.3.  Comments
TEXT: H
TEXT: H General Form:
TEXT: H
TEXT: H     * <any comment>
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     * RF=1K      Gain should be 100
TEXT: H     * Check open-loop gain and phase margin
TEXT: H
TEXT: H
TEXT: H      The asterisk in the  first  column  indicates  that
TEXT: H this  line  is  a  comment  line.   Comment lines may be
TEXT: H placed anywhere in the circuit description.   Note  that
TEXT: H SPICE3  also considers any line with leading white space
TEXT: H to be a comment.
TEXT: H
TEXT: H

SUBJECT: DEVICE MODELS
TITLE: DEVICE MODELS
TEXT: H
TEXT: H 2.3.  DEVICE MODELS
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     .MODEL MNAME TYPE(PNAME1=PVAL1 PNAME2=PVAL2 ... )
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     .MODEL MOD1 NPN (BF=50 IS=1E-13 VBF=50)
TEXT: H
TEXT: H
TEXT: H
TEXT: H      Most simple circuit elements typically require  only  a
TEXT: H few  parameter values.  However, some devices (semiconductor
TEXT: H devices in particular) that are included  in  SPICE  require
TEXT: H many parameter values.  Often, many devices in a circuit are
TEXT: H defined by the same set of  device  model  parameters.   For
TEXT: H these  reasons,  a set of device model parameters is defined
TEXT: H on a separate .MODEL line and assigned a unique model  name.
TEXT: H The  device  element  lines in SPICE then refer to the model
TEXT: H name.
TEXT: H
TEXT: H      For these more complex device types, each  device  ele-
TEXT: H ment  line  contains the device name, the nodes to which the
TEXT: H device is connected, and the device model  name.   In  addi-
TEXT: H tion,  other  optional  parameters may be specified for some
TEXT: H devices:  geometric factors and an  initial  condition  (see
TEXT: H the following section on Transistors and Diodes for more de-
TEXT: H tails).
TEXT: H
TEXT: H      MNAME in the above is the model name, and type  is  one
TEXT: H of the following fifteen types:
TEXT: H
TEXT: H             R      Semiconductor resistor model
TEXT: H             C      Semiconductor capacitor model
TEXT: H             SW     Voltage controlled switch
TEXT: H             CSW    Current controlled switch
TEXT: H             URC    Uniform distributed RC model
TEXT: H             LTRA   Lossy transmission line model
TEXT: H             D      Diode model
TEXT: H             NPN    NPN BJT model
TEXT: H             PNP    PNP BJT model
TEXT: H             NJF    N-channel JFET model
TEXT: H             PJF    P-channel JFET model
TEXT: H             NMOS   N-channel MOSFET model
TEXT: H             PMOS   P-channel MOSFET model
TEXT: H             NMF    N-channel MESFET model
TEXT: H             PMF    P-channel MESFET model
TEXT: H
TEXT: H
TEXT: H
TEXT: H      Parameter values are defined by appending the parameter
TEXT: H name  followed  by  an  equal  sign and the parameter value.
TEXT: H Model parameters that are not given a value are assigned the
TEXT: H default  values  given  below  for each model type.  Models,
TEXT: H model parameters, and default values are listed in the  next
TEXT: H section along with the description of device element lines.
TEXT: H

SUBJECT: SUBCIRCUITS
TITLE: SUBCIRCUITS
TEXT: H
TEXT: H 2.4.  SUBCIRCUITS
TEXT: H
TEXT: H
TEXT: H      A subcircuit that consists of  SPICE  elements  can  be
TEXT: H defined  and  referenced  in  a  fashion  similar  to device
TEXT: H models.  The subcircuit is defined in the input  file  by  a
TEXT: H grouping  of  element lines;  the program then automatically
TEXT: H inserts the group of elements  wherever  the  subcircuit  is
TEXT: H referenced.   There is no limit on the size or complexity of
TEXT: H subcircuits, and subcircuits may contain other  subcircuits.
TEXT: H An example of subcircuit usage is given in Appendix A.
TEXT: H
TEXT: H
SUBTOPIC: SPICE:.SUBCKT Line
SUBTOPIC: SPICE:.ENDS Line
SUBTOPIC: SPICE:Subcircuit Calls

SUBJECT: .SUBCKT Line
TITLE: .SUBCKT Line
TEXT: H
TEXT: H 2.4.1.  .SUBCKT Line
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     .SUBCKT subnam N1 <N2 N3 ...>
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     .SUBCKT OPAMP 1 2 3 4
TEXT: H
TEXT: H
TEXT: H
TEXT: H      A circuit definition is  begun  with  a  .SUBCKT  line.
TEXT: H SUBNAM  is  the  subcircuit  name,  and  N1, N2, ... are the
TEXT: H external nodes, which cannot be zero.  The group of  element
TEXT: H lines  which  immediately follow the .SUBCKT line define the
TEXT: H subcircuit.  The last line in a subcircuit definition is the
TEXT: H .ENDS line (see below).  Control lines may not appear within
TEXT: H a subcircuit definition;   however,  subcircuit  definitions
TEXT: H may contain anything else, including other subcircuit defin-
TEXT: H itions, device models, and  subcircuit  calls  (see  below).
TEXT: H Note  that  any  device  models  or  subcircuit  definitions
TEXT: H included as part of a  subcircuit  definition  are  strictly
TEXT: H local  (i.e., such models and definitions are not known out-
TEXT: H side the subcircuit definition).  Also,  any  element  nodes
TEXT: H not  included  on  the .SUBCKT line are strictly local, with
TEXT: H the exception of 0 (ground) which is always global.
TEXT: H
TEXT: H

SUBJECT: .ENDS Line
TITLE: .ENDS Line
TEXT: H
TEXT: H 2.4.2.  .ENDS Line
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     .ENDS <SUBNAM>
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     .ENDS OPAMP
TEXT: H
TEXT: H
TEXT: H      The "Ends" line must be the last one for  any  sub-
TEXT: H circuit  definition.   The subcircuit name, if included,
TEXT: H indicates which subcircuit definition is being terminat-
TEXT: H ed;   if omitted, all subcircuits being defined are ter-
TEXT: H minated.  The name is needed only when nested subcircuit
TEXT: H definitions are being made.
TEXT: H
TEXT: H
TEXT: H

SUBJECT: Subcircuit Calls
TITLE: Subcircuit Calls
TEXT: H
TEXT: H 2.4.3.  Subcircuit Calls
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     XYYYYYYY N1 <N2 N3 ...> SUBNAM
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     X1 2 4 17 3 1 MULTI
TEXT: H
TEXT: H
TEXT: H      Subcircuits  are  used  in  SPICE   by   specifying
TEXT: H pseudo-elements beginning with the letter X, followed by
TEXT: H the circuit nodes to be used in  expanding  the  subcir-
TEXT: H cuit.
TEXT: H
TEXT: H

SUBJECT: COMBINING FILES
TITLE: COMBINING FILES: .INCLUDE LINES
TEXT: H
TEXT: H 2.5.  COMBINING FILES: .INCLUDE LINES
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     .INCLUDE filename
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     .INCLUDE /users/spice/common/wattmeter.cir
TEXT: H
TEXT: H
TEXT: H      Frequently, portions of circuit  descriptions  will  be
TEXT: H reused  in  several  input  files,  particularly with common
TEXT: H models and  subcircuits.   In  any  spice  input  file,  the
TEXT: H ".include"  line  may  be used to copy some other file as if
TEXT: H that second file appeared in place of the ".include" line in
TEXT: H the original file.  There is no restriction on the file name
TEXT: H imposed by spice beyond those imposed by the local operating
TEXT: H system.

SUBJECT: CIRCUIT ELEMENTS AND MODELS
TITLE: CIRCUIT ELEMENTS AND MODELS
TEXT: H
TEXT: H 3.  CIRCUIT ELEMENTS AND MODELS
TEXT: H
TEXT: H
TEXT: H      Data  fields  that  are  enclosed  in   less-than   and
TEXT: H greater-than  signs  ('<  >')  are  optional.  All indicated
TEXT: H punctuation (parentheses, equal signs, etc.) is optional but
TEXT: H indicate  the  presence  of  any delimiter.  Further, future
TEXT: H implementations may require the punctuation  as  stated.   A
TEXT: H consistent  style  adhering  to  the  punctuation shown here
TEXT: H makes the input  easier  to  understand.   With  respect  to
TEXT: H branch voltages and currents, SPICE uniformly uses the asso-
TEXT: H ciated reference convention (current flows in the  direction
TEXT: H of voltage drop).
SUBTOPIC: SPICE:ELEMENTARY DEVICES
SUBTOPIC: SPICE:VOLTAGE AND CURRENT SOURCES
SUBTOPIC: SPICE:TRANSMISSION LINES
SUBTOPIC: SPICE:TRANSISTORS AND DIODES

SUBJECT: ELEMENTARY DEVICES
TITLE: ELEMENTARY DEVICES
TEXT: H
TEXT: H 3.1.  ELEMENTARY DEVICES
TEXT: H
SUBTOPIC: SPICE:Resistors
SUBTOPIC: SPICE:Semiconductor Resistors
SUBTOPIC: SPICE:Semiconductor Resistor Model 
SUBTOPIC: SPICE:Capacitors
SUBTOPIC: SPICE:Semiconductor Capacitors
SUBTOPIC: SPICE:Semiconductor Capacitor Model 
SUBTOPIC: SPICE:Inductors
SUBTOPIC: SPICE:Coupled Inductors
SUBTOPIC: SPICE:Switches
SUBTOPIC: SPICE:Switch Model 

SUBJECT: Resistors
TITLE: Resistors
TEXT: H
TEXT: H 3.1.1.  Resistors
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     RXXXXXXX N1 N2 VALUE
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     R1 1 2 100
TEXT: H     RC1 12 17 1K
TEXT: H
TEXT: H
TEXT: H      N1 and N2 are the two  element  nodes.   VALUE  is  the
TEXT: H resistance (in ohms) and may be positive or negative but not
TEXT: H zero.
TEXT: H
TEXT: H

SUBJECT: Semiconductor Resistors
TITLE: Semiconductor Resistors
TEXT: H
TEXT: H 3.1.2.  Semiconductor Resistors
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     RXXXXXXX N1 N2 <VALUE> <MNAME> <L=LENGTH> <W=WIDTH> <TEMP=T>
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     RLOAD 2 10 10K
TEXT: H     RMOD 3 7 RMODEL L=10u W=1u
TEXT: H
TEXT: H
TEXT: H
TEXT: H      This is the more general form of the resistor presented
TEXT: H in  section  6.1,  and  allows  the  modeling of temperature
TEXT: H effects and for the calculation  of  the  actual  resistance
TEXT: H value from strictly geometric information and the specifica-
TEXT: H tions of the process.  If VALUE is specified,  it  overrides
TEXT: H the  geometric  information  and defines the resistance.  If
TEXT: H MNAME is specified, then the resistance  may  be  calculated
TEXT: H from  the  process  information  in  the model MNAME and the
TEXT: H given LENGTH and WIDTH.  If VALUE  is  not  specified,  then
TEXT: H MNAME  and LENGTH must be specified.  If WIDTH is not speci-
TEXT: H fied, then it is taken from the default width given  in  the
TEXT: H model.   The  (optional)  TEMP  value  is the temperature at
TEXT: H which this device is to operate, and overrides the  tempera-
TEXT: H ture specification on the .OPTION control line.
TEXT: H
TEXT: H

SUBJECT: Semiconductor Resistor Model 
TITLE: Semiconductor Resistor Model (R)
TEXT: H
TEXT: H 3.1.3.  Semiconductor Resistor Model (R)
TEXT: H
TEXT: H
TEXT: H      The resistor model consists of  process-related  device
TEXT: H data  that  allow  the  resistance  to  be  calculated  from
TEXT: H geometric information and to be corrected  for  temperature.
TEXT: H The parameters available are:
TEXT: H
TEXT: H name     parameter                           units    default   example
TEXT: H
TEXT: H                                                o
TEXT: H TC1      first order temperature coeff.      Z/ C     0.0       -
TEXT: H                                                o 2
TEXT: H TC2      second order temperature coeff.     Z/ C     0.0       -
TEXT: H RSH      sheet resistance                    Z/[]     -         50
TEXT: H DEFW     default width                       meters   1e-6      2e-6
TEXT: H NARROW   narrowing due to side etching       meters   0.0       1e-7
TEXT: H                                              o
TEXT: H TNOM     parameter measurement temperature    C       27        50
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The sheet resistance is used with the narrowing parame-
TEXT: H ter  and  L  and W from the resistor device to determine the
TEXT: H nominal resistance by the formula
TEXT: H
TEXT: H                              L - NARROW
TEXT: H                      R = RSH ----------
TEXT: H                              W - NARROW
TEXT: H
TEXT: H DEFW is used to supply a default value for W if one  is  not
TEXT: H specified  for the device.  If either RSH or L is not speci-
TEXT: H fied, then the standard default resistance value of 1k Z  is
TEXT: H used.  TNOM is used to override the circuit-wide value given
TEXT: H on the .OPTIONS control line where the  parameters  of  this
TEXT: H model  have been measured at a different temperature.  After
TEXT: H the nominal resistance is calculated,  it  is  adjusted  for
TEXT: H temperature by the formula:
TEXT: H
TEXT: H                                                   2
TEXT: H        R(T) = R(T ) [1 + TC1 (T - T ) + TC2 (T-T ) ]
TEXT: H                  0                 0            0
TEXT: H
TEXT: H
TEXT: H

SUBJECT: Capacitors
TITLE: Capacitors
TEXT: H
TEXT: H 3.1.4.  Capacitors
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     CXXXXXXX N+ N- VALUE <IC=INCOND>
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     CBYP 13 0 1UF
TEXT: H     COSC 17 23 10U IC=3V
TEXT: H
TEXT: H
TEXT: H      N+ and N- are the  positive  and  negative  element
TEXT: H nodes,   respectively.   VALUE  is  the  capacitance  in
TEXT: H Farads.
TEXT: H
TEXT: H
TEXT: H      The (optional) initial condition is the initial  (time-
TEXT: H zero)  value of capacitor voltage (in Volts).  Note that the
TEXT: H initial conditions (if any) apply 'only' if the  UIC  option
TEXT: H is specified on the .TRAN control line.
TEXT: H
TEXT: H

SUBJECT: Semiconductor Capacitors
TITLE: Semiconductor Capacitors
TEXT: H
TEXT: H 3.1.5.  Semiconductor Capacitors
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     CXXXXXXX N1 N2 <VALUE> <MNAME> <L=LENGTH> <W=WIDTH> <IC=VAL>
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     CLOAD 2 10 10P
TEXT: H     CMOD 3 7 CMODEL L=10u W=1u
TEXT: H
TEXT: H
TEXT: H
TEXT: H      This  is  the  more  general  form  of  the   Capacitor
TEXT: H presented  in section 6.2, and allows for the calculation of
TEXT: H the actual capacitance value from strictly geometric  infor-
TEXT: H mation  and  the specifications of the process.  If VALUE is
TEXT: H specified, it defines the capacitance.  If MNAME  is  speci-
TEXT: H fied,  then  the  capacitance is calculated from the process
TEXT: H information in the model MNAME  and  the  given  LENGTH  and
TEXT: H WIDTH.   If  VALUE  is  not specified, then MNAME and LENGTH
TEXT: H must be specified.  If WIDTH is not specified,  then  it  is
TEXT: H taken  from  the  default  width given in the model.  Either
TEXT: H VALUE or MNAME, LENGTH, and WIDTH may be specified, but  not
TEXT: H both sets.
TEXT: H
TEXT: H

SUBJECT: Semiconductor Capacitor Model 
TITLE: Semiconductor Capacitor Model (C)
TEXT: H
TEXT: H 3.1.6.  Semiconductor Capacitor Model (C)
TEXT: H
TEXT: H
TEXT: H      The capacitor model contains process  information  that
TEXT: H may  be  used  to  compute  the  capacitance  from  strictly
TEXT: H geometric information.
TEXT: H
TEXT: H
TEXT: H
TEXT: H name     parameter                       units       default   example
TEXT: H
TEXT: H                                                  2
TEXT: H CJ       junction bottom capacitance     F/meters    -         5e-5
TEXT: H CJSW     junction sidewall capacitance   F/meters    -         2e-11
TEXT: H DEFW     default device width            meters      1e-6      2e-6
TEXT: H NARROW   narrowing due to side etching   meters      0.0       1e-7
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The capacitor has a capacitance computed as
TEXT: H
TEXT: H CAP = CJ (LENGTH - NARROW) (WIDTH - NARROW) + 2 CJSW (LENGTH + WIDTH - 2 NARROW)
TEXT: H
TEXT: H

SUBJECT: Inductors
TITLE: Inductors
TEXT: H
TEXT: H 3.1.7.  Inductors
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     LYYYYYYY N+ N- VALUE <IC=INCOND>
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     LLINK 42 69 1UH
TEXT: H     LSHUNT 23 51 10U IC=15.7MA
TEXT: H
TEXT: H
TEXT: H      N+ and N- are the  positive  and  negative  element
TEXT: H nodes,  respectively.   VALUE  is the inductance in Hen-
TEXT: H ries.
TEXT: H
TEXT: H
TEXT: H      The (optional) initial condition is the initial  (time-
TEXT: H zero)  value  of  inductor current (in Amps) that flows from
TEXT: H N+, through the inductor, to N-.  Note that the initial con-
TEXT: H ditions  (if  any) apply only if the UIC option is specified
TEXT: H on the .TRAN analysis line.
TEXT: H
TEXT: H

SUBJECT: Coupled Inductors
TITLE: Coupled (Mutual) Inductors
TEXT: H
TEXT: H 3.1.8.  Coupled (Mutual) Inductors
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     KXXXXXXX LYYYYYYY LZZZZZZZ VALUE
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     K43 LAA LBB 0.999
TEXT: H     KXFRMR L1 L2 0.87
TEXT: H
TEXT: H
TEXT: H      LYYYYYYY and LZZZZZZZ are the names of the two cou-
TEXT: H pled  inductors,  and  VALUE  is the coefficient of cou-
TEXT: H pling, K, which must be greater than 0 and less than  or
TEXT: H equal  to  1.  Using the 'dot' convention, place a 'dot'
TEXT: H on the first node of each inductor.
TEXT: H
TEXT: H
TEXT: H

SUBJECT: Switches
TITLE: Switches
TEXT: H
TEXT: H 3.1.9.  Switches
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     SXXXXXXX N+ N- NC+ NC- MODEL <ON><OFF>
TEXT: H     WYYYYYYY N+ N- VNAM MODEL <ON><OFF>
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     s1 1 2 3 4 switch1 ON
TEXT: H     s2 5 6 3 0 sm2 off
TEXT: H     Switch1 1 2 10 0 smodel1
TEXT: H     w1 1 2 vclock switchmod1
TEXT: H     W2 3 0 vramp sm1 ON
TEXT: H     wreset 5 6 vclck lossyswitch OFF
TEXT: H
TEXT: H
TEXT: H      Nodes 1 and 2  are  the  nodes  between  which  the
TEXT: H switch  terminals are connected.  The model name is man-
TEXT: H datory while the initial conditions are  optional.   For
TEXT: H the voltage controlled switch, nodes 3 and 4 are the po-
TEXT: H sitive and negative controlling nodes respectively.  For
TEXT: H the  current  controlled switch, the controlling current
TEXT: H is that  through  the  specified  voltage  source.   The
TEXT: H direction  of  positive controlling current flow is from
TEXT: H the positive node, through the source, to  the  negative
TEXT: H node.
TEXT: H
TEXT: H
TEXT: H

SUBJECT: Switch Model 
TITLE: Switch Model (SW/CSW)
TEXT: H
TEXT: H 3.1.10.  Switch Model (SW/CSW)
TEXT: H
TEXT: H
TEXT: H      The switch model allows an almost ideal  switch  to  be
TEXT: H described  in SPICE.  The switch is not quite ideal, in that
TEXT: H the resistance can not change from 0 to infinity,  but  must
TEXT: H always have a finite positive value.  By proper selection of
TEXT: H the on and off resistances, they can be effectively zero and
TEXT: H infinity  in  comparison  to  other  circuit  elements.  The
TEXT: H parameters available are:
TEXT: H
TEXT: H     name   parameter            units   default   switch
TEXT: H
TEXT: H     VT     threshold voltage    Volts   0.0       S
TEXT: H     IT     threshold current    Amps    0.0       W
TEXT: H     VH     hysteresis voltage   Volts   0.0       S
TEXT: H     IH     hysteresis current   Amps    0.0       W
TEXT: H     RON    on resistance        Z       1.0       both
TEXT: H     ROFF   off resistance       Z       1/GMIN*   both
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H      *(See the .OPTIONS control line for  a  description  of
TEXT: H GMIN,  its  default  value  results  in an off-resistance of
TEXT: H 1.0e+12 ohms.)
TEXT: H
TEXT: H
TEXT: H      The use of an ideal element that  is  highly  nonlinear
TEXT: H such as a switch can cause large discontinuities to occur in
TEXT: H the circuit node voltages.  A  rapid  change  such  as  that
TEXT: H associated  with a switch changing state can cause numerical
TEXT: H roundoff or tolerance problems leading to erroneous  results
TEXT: H or  timestep difficulties.  The user of switches can improve
TEXT: H the situation by taking the following steps:
TEXT: H
TEXT: H      First, it is wise to set ideal switch  impedances  just
TEXT: H high  or  low  enough to be negligible with respect to other
TEXT: H circuit elements.  Using switch impedances that are close to
TEXT: H "ideal"  in all cases aggravates the problem of discontinui-
TEXT: H ties mentioned above.  Of course, when modeling real devices
TEXT: H such  as  MOSFETS, the on resistance should be adjusted to a
TEXT: H realistic level depending on the size of  the  device  being
TEXT: H modeled.
TEXT: H
TEXT: H      If a wide range of ON to OFF resistance must be used in
TEXT: H the switches (ROFF/RON >1e+12), then the tolerance on errors
TEXT: H allowed during transient analysis  should  be  decreased  by
TEXT: H using  the  .OPTIONS control line and specifying TRTOL to be
TEXT: H less than the default  value  of  7.0.   When  switches  are
TEXT: H placed around capacitors, then the option CHGTOL should also
TEXT: H be reduced.  Suggested values for these two options are  1.0
TEXT: H and  1e-16  respectively.  These changes inform SPICE3 to be
TEXT: H more careful around the switch points so that no errors  are
TEXT: H made due to the rapid change in the circuit.
TEXT: H

SUBJECT: VOLTAGE AND CURRENT SOURCES
TITLE: VOLTAGE AND CURRENT SOURCES
TEXT: H
TEXT: H 3.2.  VOLTAGE AND CURRENT SOURCES
TEXT: H
SUBTOPIC: SPICE:Independent Sources
SUBTOPIC: SPICE:Linear Dependent Sources
SUBTOPIC: SPICE:Nonlinear Dependent Sources

SUBJECT: Independent Sources
TITLE: Independent Sources
TEXT: H
TEXT: H 3.2.1.  Independent Sources
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     VXXXXXXX N+ N- <<DC> DC/TRAN VALUE> <AC <ACMAG <ACPHASE>>>
TEXT: H     +       <DISTOF1 <F1MAG <F1PHASE>>> <DISTOF2 <F2MAG <F2PHASE>>>
TEXT: H     IYYYYYYY N+ N- <<DC> DC/TRAN VALUE> <AC <ACMAG <ACPHASE>>>
TEXT: H     +       <DISTOF1 <F1MAG <F1PHASE>>> <DISTOF2 <F2MAG <F2PHASE>>>
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     VCC 10 0 DC 6
TEXT: H     VIN 13 2 0.001 AC 1 SIN(0 1 1MEG)
TEXT: H     ISRC 23 21 AC 0.333 45.0 SFFM(0 1 10K 5 1K)
TEXT: H     VMEAS 12 9
TEXT: H     VCARRIER 1 0 DISTOF1 0.1 -90.0
TEXT: H     VMODULATOR 2 0 DISTOF2 0.01
TEXT: H     IIN1 1 5 AC 1 DISTOF1 DISTOF2 0.001
TEXT: H
TEXT: H
TEXT: H      N+ and N- are the positive and negative nodes,  respec-
TEXT: H tively.   Note  that  voltage  sources need not be grounded.
TEXT: H Positive current is assumed to flow from the positive  node,
TEXT: H through  the source, to the negative node.  A current source
TEXT: H of positive value forces current to flow out of the N+ node,
TEXT: H through  the source, and into the N- node.  Voltage sources,
TEXT: H in addition to being used for circuit  excitation,  are  the
TEXT: H 'ammeters'  for  SPICE, that is, zero valued voltage sources
TEXT: H may be inserted into the circuit for the purpose of  measur-
TEXT: H ing  current.   They  of  course  have  no effect on circuit
TEXT: H operation since they represent short-circuits.
TEXT: H
TEXT: H
TEXT: H      DC/TRAN is the dc and transient analysis value  of  the
TEXT: H source.   If  the source value is zero both for dc and tran-
TEXT: H sient analyses, this value may be omitted.   If  the  source
TEXT: H value  is  time-invariant  (e.g.,  a power supply), then the
TEXT: H value may optionally be preceded by the letters DC.
TEXT: H
TEXT: H
TEXT: H      ACMAG is the ac magnitude and ACPHASE is the ac  phase.
TEXT: H The  source  is  set  to  this value in the ac analysis.  If
TEXT: H ACMAG is omitted following the keyword AC, a value of  unity
TEXT: H is  assumed.   If  ACPHASE  is  omitted,  a value of zero is
TEXT: H assumed.  If the source is not an ac small-signal input, the
TEXT: H keyword AC and the ac values are omitted.
TEXT: H
TEXT: H
TEXT: H      DISTOF1 and DISTOF2 are the keywords that specify  that
TEXT: H the independent source has distortion inputs at the frequen-
TEXT: H cies F1 and F2 respectively  (see  the  description  of  the
TEXT: H .DISTO  control  line).   The keywords may be followed by an
TEXT: H optional magnitude and phase.  The  default  values  of  the
TEXT: H magnitude and phase are 1.0 and 0.0 respectively.
TEXT: H
TEXT: H
TEXT: H      Any independent source can be assigned a time-dependent
TEXT: H value  for  transient  analysis.   If a source is assigned a
TEXT: H time-dependent value, the time-zero value  is  used  for  dc
TEXT: H analysis.   There  are  five  independent  source functions:
TEXT: H pulse,  exponential,  sinusoidal,  piece-wise  linear,   and
TEXT: H single-frequency FM.  If parameters other than source values
TEXT: H are omitted or set to zero, the  default  values  shown  are
TEXT: H assumed.   (TSTEP is the printing increment and TSTOP is the
TEXT: H final time (see the .TRAN control line for explanation)).
TEXT: H
TEXT: H
SUBTOPIC: SPICE:Pulse
SUBTOPIC: SPICE:Sinusoidal
SUBTOPIC: SPICE:Exponential
SUBTOPIC: SPICE:PieceWise Linear
SUBTOPIC: SPICE:SingleFrequency FM

SUBJECT: Pulse
TITLE: Pulse
TEXT: H
TEXT: H 3.2.1.1.  Pulse
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     PULSE(V1 V2 TD TR TF PW PER)
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     VIN 3 0 PULSE(-1 1 2NS 2NS 2NS 50NS 100NS)
TEXT: H
TEXT: H
TEXT: H
TEXT: H      parameter               default value         units
TEXT: H      -----------------------------------------------------
TEXT: H      V1 (initial value)                      Volts or Amps
TEXT: H      V2 (pulsed value)                       Volts or Amps
TEXT: H      TD (delay time)         0.0             seconds
TEXT: H      TR (rise time)          TSTEP           seconds
TEXT: H      TF (fall time)          TSTEP           seconds
TEXT: H      PW (pulse width)        TSTOP           seconds
TEXT: H      PER(period)             TSTOP           seconds
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H      A single pulse so specified is described by the follow-
TEXT: H ing table:
TEXT: H
TEXT: H
TEXT: H
TEXT: H      time          value
TEXT: H      -------------------
TEXT: H      0             V1
TEXT: H      TD            V1
TEXT: H      TD+TR         V2
TEXT: H      TD+TR+PW      V2
TEXT: H      TD+TR+PW+TF   V1
TEXT: H      TSTOP         V1
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H      Intermediate points are determined by linear interpola-
TEXT: H tion.
TEXT: H
TEXT: H

SUBJECT: Sinusoidal
TITLE: Sinusoidal
TEXT: H
TEXT: H 3.2.1.2.  Sinusoidal
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     SIN(VO VA FREQ TD THETA)
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     VIN 3 0 SIN(0 1 100MEG 1NS 1E10)
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H      parameters                default value   units
TEXT: H      -------------------------------------------------------
TEXT: H      VO     (offset)                           Volts or Amps
TEXT: H      VA     (amplitude)                        Volts or Amps
TEXT: H      FREQ   (frequency)        1/TSTOP         Hz
TEXT: H      TD     (delay)            0.0             seconds
TEXT: H      THETA  (damping factor)   0.0             1/seconds
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The shape of the waveform is described by the following
TEXT: H table:
TEXT: H
TEXT: H
TEXT: H      time          value
TEXT: H      ------------------------------------------------------------
TEXT: H      0 to TD       VO
TEXT: H                             -(t - TD)THETA
TEXT: H      TD to TSTOP   VO + VA e               sin(2 J FREQ (t + TD))
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H

SUBJECT: Exponential
TITLE: Exponential
TEXT: H
TEXT: H 3.2.1.3.  Exponential
TEXT: H
TEXT: H General Form:
TEXT: H
TEXT: H     EXP(V1 V2 TD1 TAU1 TD2 TAU2)
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     VIN 3 0 EXP(-4 -1 2NS 30NS 60NS 40NS)
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H      parameter                   default value   units
TEXT: H      ---------------------------------------------------------
TEXT: H      V1   (initial value)                        Volts or Amps
TEXT: H      V2   (pulsed value)                         Volts or Amps
TEXT: H      TD1  (rise delay time)      0.0             seconds
TEXT: H      TAU1 (rise time constant)   TSTEP           seconds
TEXT: H      TD2  (fall delay time)      TD1+TSTEP       seconds
TEXT: H      TAU2 (fall time constant)   TSTEP           seconds
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The shape of the waveform is described by the following
TEXT: H table:
TEXT: H
TEXT: H
TEXT: H
TEXT: H      time           value
TEXT: H      ----------------------------------------------------------------------------
TEXT: H       0 to TD1      V1
TEXT: H                                    |     ------------|
TEXT: H                                              TAU1
TEXT: H                                    |    -(t - TD1)   |                -(t - TD2)
TEXT: H      TD1 to TD2     V1 + (V2 - V1)  1 - e
TEXT: H                                    |    ----------|             |     ----------|
TEXT: H                                    |       TAU1   |             |        TAU2   |
TEXT: H      TD2 to TSTOP   V1 + (V2 - V1)   - e            + (V1 - V2)  1 - e
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H

SUBJECT: PieceWise Linear
TITLE: Piece-Wise Linear
TEXT: H
TEXT: H 3.2.1.4.  Piece-Wise Linear
TEXT: H
TEXT: H General Form:
TEXT: H
TEXT: H     PWL(T1 V1 <T2 V2 T3 V3 T4 V4 ...>)
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     VCLOCK 7 5 PWL(0 -7 10NS -7 11NS -3 17NS -3 18NS -7 50NS -7)
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H      Each pair of values (Ti, Vi) specifies that  the  value
TEXT: H of  the  source  is  Vi  (in Volts or Amps) at time=Ti.  The
TEXT: H value of the source at intermediate values of time is deter-
TEXT: H mined by using linear interpolation on the input values.
TEXT: H
TEXT: H

SUBJECT: SingleFrequency FM
TITLE: Single-Frequency FM
TEXT: H
TEXT: H 3.2.1.5.  Single-Frequency FM
TEXT: H
TEXT: H General Form:
TEXT: H
TEXT: H     SFFM(VO VA FC MDI FS)
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     V1 12 0 SFFM(0 1M 20K 5 1K)
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H      parameter                 default value   units
TEXT: H      -------------------------------------------------------
TEXT: H      VO  (offset)                              Volts or Amps
TEXT: H      VA  (amplitude)                           Volts or Amps
TEXT: H      FC  (carrier frequency)   1/TSTOP         Hz
TEXT: H      MDI (modulation index)
TEXT: H      FS  (signal frequency)    1/TSTOP         Hz
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H The shape of the waveform  is  described  by  the  following
TEXT: H equation:
TEXT: H
TEXT: H
TEXT: H                        |                            |
TEXT: H        V(t)=V  + V  sin 2 J FC t + MDI sin(2 J FS t)
TEXT: H              O    A    |                            |
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H

SUBJECT: Linear Dependent Sources
TITLE: Linear Dependent Sources
TEXT: H
TEXT: H 3.2.2.  Linear Dependent Sources
TEXT: H
TEXT: H
TEXT: H      SPICE  allows  circuits  to  contain  linear  dependent
TEXT: H sources characterized by any of the four equations
TEXT: H
TEXT: H         i = g v          v = e v          i = f i          v
TEXT: H = h i
TEXT: H
TEXT: H where g, e, f, and h are constants representing transconduc-
TEXT: H tance,  voltage  gain,  current  gain,  and transresistance,
TEXT: H respectively.
TEXT: H
TEXT: H
TEXT: H
SUBTOPIC: SPICE:Linear VoltageControlled Current Sources
SUBTOPIC: SPICE:Linear VoltageControlled Voltage Sources
SUBTOPIC: SPICE:Linear CurrentControlled Current Sources
SUBTOPIC: SPICE:Linear CurrentControlled Voltage Sources

SUBJECT: Linear VoltageControlled Current Sources
TITLE: Linear Voltage-Controlled Current Sources
TEXT: H
TEXT: H 3.2.2.1.  Linear Voltage-Controlled Current Sources
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     GXXXXXXX N+ N- NC+ NC- VALUE
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     G1 2 0 5 0 0.1MMHO
TEXT: H
TEXT: H
TEXT: H      N+ and N- are  the  positive  and  negative  nodes,
TEXT: H respectively.   Current  flow is from the positive node,
TEXT: H through the source, to the negative node.  NC+  and  NC-
TEXT: H are the positive and negative controlling nodes, respec-
TEXT: H tively.  VALUE is the transconductance (in mhos).
TEXT: H
TEXT: H
TEXT: H

SUBJECT: Linear VoltageControlled Voltage Sources
TITLE: Linear Voltage-Controlled Voltage Sources
TEXT: H
TEXT: H 3.2.2.2.  Linear Voltage-Controlled Voltage Sources
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     EXXXXXXX N+ N- NC+ NC- VALUE
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     E1 2 3 14 1 2.0
TEXT: H
TEXT: H
TEXT: H      N+ is the positive node, and  N-  is  the  negative
TEXT: H node.   NC+  and  NC- are the positive and negative con-
TEXT: H trolling nodes,  respectively.   VALUE  is  the  voltage
TEXT: H gain.
TEXT: H
TEXT: H
TEXT: H

SUBJECT: Linear CurrentControlled Current Sources
TITLE: Linear Current-Controlled Current Sources
TEXT: H
TEXT: H 3.2.2.3.  Linear Current-Controlled Current Sources
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     FXXXXXXX N+ N- VNAM VALUE
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     F1 13 5 VSENS 5
TEXT: H
TEXT: H
TEXT: H      N+ and N- are  the  positive  and  negative  nodes,
TEXT: H respectively.   Current  flow is from the positive node,
TEXT: H through the source, to the negative node.  VNAM  is  the
TEXT: H name  of  a voltage source through which the controlling
TEXT: H current flows.  The direction  of  positive  controlling
TEXT: H current  flow  is  from  the  positive node, through the
TEXT: H source, to the negative node  of  VNAM.   VALUE  is  the
TEXT: H current gain.
TEXT: H
TEXT: H
TEXT: H

SUBJECT: Linear CurrentControlled Voltage Sources
TITLE: Linear Current-Controlled Voltage Sources
TEXT: H
TEXT: H 3.2.2.4.  Linear Current-Controlled Voltage Sources
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     HXXXXXXX N+ N- VNAM VALUE
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     HX 5 17 VZ 0.5K
TEXT: H
TEXT: H
TEXT: H      N+ and N- are  the  positive  and  negative  nodes,
TEXT: H respectively.   VNAM  is  the  name  of a voltage source
TEXT: H through which the controlling current flows.  The direc-
TEXT: H tion  of  positive  controlling current flow is from the
TEXT: H positive node, through the source, to the negative  node
TEXT: H of VNAM.  VALUE is the transresistance (in ohms).
TEXT: H
TEXT: H
TEXT: H

SUBJECT: Nonlinear Dependent Sources
TITLE: Non-linear Dependent Sources
TEXT: H
TEXT: H 3.2.3.  Non-linear Dependent Sources
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     BXXXXXXX N+ N- <I=EXPR> <V=EXPR>
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     B1 0 1 I=cos(v(1))+sin(v(2))
TEXT: H     B1 0 1 V=ln(cos(log(v(1,2)^2)))-v(3)^4+v(2)^v(1)
TEXT: H     B1 3 4 I=17
TEXT: H     B1 3 4 V=exp(pi^i(vdd))
TEXT: H
TEXT: H
TEXT: H
TEXT: H      N+ is the positive node, and N- is the  negative  node.
TEXT: H The  values of the V and I parameters determine the voltages
TEXT: H and currents across and through  the  device,  respectively.
TEXT: H If  I is given then the device is a current source, and if V
TEXT: H is given the device is a voltage source.  One and  only  one
TEXT: H of these parameters must be given.
TEXT: H
TEXT: H      The small-signal AC behavior of the nonlinear source is
TEXT: H a  linear dependent source (or sources) with a proportional-
TEXT: H ity constant equal to the derivative (or derivatives) of the
TEXT: H source at the DC operating point.
TEXT: H
TEXT: H
TEXT: H      The expressions given for V and I may be  any  function
TEXT: H of voltages and currents through voltage sources in the sys-
TEXT: H tem.  The following functions of real variables are defined:
TEXT: H
TEXT: H                 abs     asinh   cosh   sin
TEXT: H                 acos    atan    exp    sinh
TEXT: H                 acosh   atanh   ln     sqrt
TEXT: H                 asin    cos     log    tan
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The function "u" is the  unit  step  function,  with  a
TEXT: H value  of  one for arguments greater than one and a value of
TEXT: H zero for arguments less than zero.  The function "uramp"  is
TEXT: H the  integral of the unit step: for an input x, the value is
TEXT: H zero if x is less than zero, or if x is  greater  than  zero
TEXT: H the value is x.  These two functions are useful in sythesiz-
TEXT: H ing piece-wise non-linear functions, though convergence  may
TEXT: H be adversely affected.
TEXT: H
TEXT: H
TEXT: H      The following standard operators are defined:
TEXT: H
TEXT: H      +       -       *       /       ^       unary -
TEXT: H
TEXT: H
TEXT: H      If the argument of log, ln, or sqrt becomes  less  than
TEXT: H zero,  the  absolute  value  of  the argument is used.  If a
TEXT: H divisor becomes zero or the argument of log  or  ln  becomes
TEXT: H zero,  an  error will result.  Other problems may occur when
TEXT: H the argument for a function in a partial derivative enters a
TEXT: H region where that function is undefined.
TEXT: H
TEXT: H
TEXT: H      To get time into the expression you can  integrate  the
TEXT: H current  from a constant current source with a capacitor and
TEXT: H use the resulting voltage (don't forget to set  the  initial
TEXT: H voltage  across the capacitor).  Non-linear resistors, capa-
TEXT: H citors, and inductors may be synthesized with the  nonlinear
TEXT: H dependent  source.   Non-linear resistors are obvious.  Non-
TEXT: H linear capacitors and inductors are implemented  with  their
TEXT: H linear  counterparts  by  a  change of variables implemented
TEXT: H with the nonlinear dependent source.  The following  subcir-
TEXT: H cuit will implement a nonlinear capacitor:
TEXT: H
TEXT: H     .Subckt nlcap   pos neg
TEXT: H     * Bx: calculate f(input voltage)
TEXT: H     Bx   1    0    v = f(v(pos,neg))
TEXT: H     * Cx: linear capacitance
TEXT: H     Cx   2    0    1
TEXT: H     * Vx: Ammeter to measure current into the capacitor
TEXT: H     Vx   2    1    DC 0Volts
TEXT: H     * Drive the current through Cx back into the circuit
TEXT: H     Fx   pos  neg  Vx 1
TEXT: H     .ends
TEXT: H
TEXT: H
TEXT: H Non-linear inductors are similar.
TEXT: H
TEXT: H

SUBJECT: TRANSMISSION LINES
TITLE: TRANSMISSION LINES
TEXT: H
TEXT: H 3.3.  TRANSMISSION LINES
TEXT: H
SUBTOPIC: SPICE:Lossless Transmission Lines
SUBTOPIC: SPICE:Lossy Transmission Lines
SUBTOPIC: SPICE:Lossy Transmission Line Model 
SUBTOPIC: SPICE:Uniform Distributed RC Lines 
SUBTOPIC: SPICE:Uniform Distributed RC Model 

SUBJECT: Lossless Transmission Lines
TITLE: Lossless Transmission Lines
TEXT: H
TEXT: H 3.3.1.  Lossless Transmission Lines
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     TXXXXXXX N1 N2 N3 N4 Z0=VALUE <TD=VALUE> <F=FREQ <NL=NRMLEN>>
TEXT: H     +                    <IC=V1, I1, V2, I2>
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     T1 1 0 2 0 Z0=50 TD=10NS
TEXT: H
TEXT: H
TEXT: H      N1 and N2 are the nodes at port 1;  N3 and N4  are  the
TEXT: H nodes  at  port 2.  Z0 is the characteristic impedance.  The
TEXT: H length of the line may be expressed in either of two  forms.
TEXT: H The  transmission  delay,  TD, may be specified directly (as
TEXT: H TD=10ns, for example).  Alternatively, a frequency F may  be
TEXT: H given, together with NL, the normalized electrical length of
TEXT: H the transmission line with respect to the wavelength in  the
TEXT: H line at the frequency F.  If a frequency is specified but NL
TEXT: H is omitted, 0.25 is  assumed  (that  is,  the  frequency  is
TEXT: H assumed  to  be  the  quarter-wave  frequency).   Note  that
TEXT: H although both forms for expressing the line length are indi-
TEXT: H cated as optional, one of the two must be specified.
TEXT: H
TEXT: H      Note that this  element  models  only  one  propagating
TEXT: H mode.  If all four nodes are distinct in the actual circuit,
TEXT: H then two modes may be excited.  To simulate  such  a  situa-
TEXT: H tion, two transmission-line elements are required.  (see the
TEXT: H example in Appendix A for further clarification.)
TEXT: H
TEXT: H      The (optional) initial condition specification consists
TEXT: H of  the voltage and current at each of the transmission line
TEXT: H ports.  Note that the  initial  conditions  (if  any)  apply
TEXT: H 'only'  if  the UIC option is specified on the .TRAN control
TEXT: H line.
TEXT: H
TEXT: H      Note that a lossy transmission line  (see  below)  with
TEXT: H zero  loss  may  be  more  accurate  than  than the lossless
TEXT: H transmission line due to implementation details.
TEXT: H
TEXT: H

SUBJECT: Lossy Transmission Lines
TITLE: Lossy Transmission Lines
TEXT: H
TEXT: H 3.3.2.  Lossy Transmission Lines
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     OXXXXXXX N1 N2 N3 N4 MNAME
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     O23 1 0 2 0 LOSSYMOD
TEXT: H     OCONNECT 10 5 20 5 INTERCONNECT
TEXT: H
TEXT: H
TEXT: H
TEXT: H      This  is  a  two-port  convolution  model  for  single-
TEXT: H conductor lossy transmission lines.  N1 and N2 are the nodes
TEXT: H at port 1;  N3 and N4 are the nodes at port 2.  Note that  a
TEXT: H lossy  transmission line with zero loss may be more accurate
TEXT: H than than the lossless transmission line due to  implementa-
TEXT: H tion details.
TEXT: H

SUBJECT: Lossy Transmission Line Model 
TITLE: Lossy Transmission Line Model (LTRA)
TEXT: H
TEXT: H 3.3.3.  Lossy Transmission Line Model (LTRA)
TEXT: H
TEXT: H
TEXT: H      The uniform RLC/RC/LC/RG transmission line  model  (re-
TEXT: H ferred  to  as  the  LTRA model henceforth) models a uniform
TEXT: H constant-parameter distributed transmission  line.   The  RC
TEXT: H and  LC  cases  may  also  be  modeled using the URC and TRA
TEXT: H models; however, the newer LTRA model is usually faster  and
TEXT: H more  accurate  than  the others.  The operation of the LTRA
TEXT: H model is based on the convolution of the transmission line's
TEXT: H impulse responses with its inputs (see [8]).
TEXT: H
TEXT: H      The LTRA model takes a number of  parameters,  some  of
TEXT: H which must be given and some of which are optional.
TEXT: H
TEXT: H name           parameter                               units/type       default      example
TEXT: H
TEXT: H R              resistance/length                       Z/unit           0.0          0.2
TEXT: H L              inductance/length                       henrys/unit      0.0          9.13e-9
TEXT: H G              conductance/length                      mhos/unit        0.0          0.0
TEXT: H C              capacitance/length                      farads/unit      0.0          3.65e-12
TEXT: H LEN            length of line                                           no default   1.0
TEXT: H REL            breakpoint control                      arbitrary unit   1            0.5
TEXT: H ABS            breakpoint control                                       1            5
TEXT: H NOSTEPLIMIT    don't limit  timestep  to  less  than   flag             not set      set
TEXT: H                line delay
TEXT: H NOCONTROL      don't do complex timestep control       flag             not set      set
TEXT: H LININTERP      use linear interpolation                flag             not set      set
TEXT: H MIXEDINTERP    use linear when quadratic seems bad                      not set      set
TEXT: H COMPACTREL     special reltol for history compaction   flag             RELTOL       1.0e-3
TEXT: H COMPACTABS     special abstol for history compaction                    ABSTOL       1.0e-9
TEXT: H TRUNCNR        use   Newton-Raphson    method    for   flag             not set      set
TEXT: H                timestep control
TEXT: H TRUNCDONTCUT   don't   limit   timestep   to    keep   flag             not set      set
TEXT: H                impulse-response errors low
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The following types of lines have been  implemented  so
TEXT: H far:  RLC (uniform transmission line with series loss only),
TEXT: H RC (uniform RC line), LC (lossless transmission  line),  and
TEXT: H RG  (distributed  series resistance and parallel conductance
TEXT: H only).  Any other combination will yield  erroneous  results
TEXT: H and should not be tried.  The length LEN of the line must be
TEXT: H specified.
TEXT: H
TEXT: H      NOSTEPLIMIT is a flag that will remove the default res-
TEXT: H triction  of limiting time-steps to less than the line delay
TEXT: H in the RLC case.  NOCONTROL is  a  flag  that  prevents  the
TEXT: H default limiting of the time-step based on convolution error
TEXT: H criteria in the RLC and RC cases.  This speeds up simulation
TEXT: H but  may  in  some  cases  reduce  the  accuracy of results.
TEXT: H LININTERP is a flag that, when specified,  will  use  linear
TEXT: H interpolation instead of the default quadratic interpolation
TEXT: H for calculating delayed  signals.   MIXEDINTERP  is  a  flag
TEXT: H that, when specified, uses a metric for judging whether qua-
TEXT: H dratic interpolation is not applicable and if so uses linear
TEXT: H interpolation;  otherwise  it  uses  the  default  quadratic
TEXT: H interpolation.  TRUNCDONTCUT is  a  flag  that  removes  the
TEXT: H default  cutting  of  the  time-step  to limit errors in the
TEXT: H actual calculation of impulse-response  related  quantities.
TEXT: H COMPACTREL  and  COMPACTABS  are quantities that control the
TEXT: H compaction of the past history of values stored for convolu-
TEXT: H tion.   Larger  values  of  these lower accuracy but usually
TEXT: H increase simulation speed.  These are to be  used  with  the
TEXT: H TRYTOCOMPACT  option,  described  in  the  .OPTIONS section.
TEXT: H TRUNCNR is a flag that turns on the  use  of  Newton-Raphson
TEXT: H iterations  to  determine  an  appropriate  timestep  in the
TEXT: H timestep control routines. The default is a trial and  error
TEXT: H procedure by cutting the previous timestep in half.  REL and
TEXT: H ABS are quantities that control the setting of breakpoints.
TEXT: H
TEXT: H      The option most worth experimenting with for increasing
TEXT: H the  speed  of simulation is REL.  The default value of 1 is
TEXT: H usually safe from the point of view of  accuracy  but  occa-
TEXT: H sionally increases computation time.  A value greater than 2
TEXT: H eliminates all breakpoints and may be worth trying depending
TEXT: H on  the  nature  of the rest of the circuit, keeping in mind
TEXT: H that it might not be safe from the  viewpoint  of  accuracy.
TEXT: H Breakpoints  may  usually  be  entirely  eliminated if it is
TEXT: H expected the circuit will not display sharp discontinuities.
TEXT: H Values  between  0 and 1 are usually not required but may be
TEXT: H used for setting many breakpoints.
TEXT: H
TEXT: H      COMPACTREL may  also  be  experimented  with  when  the
TEXT: H option  TRYTOCOMPACT  is  specified in a .OPTIONS card.  The
TEXT: H legal range is between  0  and  1.   Larger  values  usually
TEXT: H decrease  the  accuracy  of the simulation but in some cases
TEXT: H improve speed.   If  TRYTOCOMPACT  is  not  specified  on  a
TEXT: H .OPTIONS card, history compaction is not attempted and accu-
TEXT: H racy is high.  NOCONTROL, TRUNCDONTCUT and NOSTEPLIMIT  also
TEXT: H tend to increase speed at the expense of accuracy.
TEXT: H

SUBJECT: Uniform Distributed RC Lines 
TITLE: Uniform Distributed RC Lines (Lossy)
TEXT: H
TEXT: H 3.3.4.  Uniform Distributed RC Lines (Lossy)
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     UXXXXXXX N1 N2 N3 MNAME L=LEN <N=LUMPS>
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     U1 1 2 0 URCMOD L=50U
TEXT: H     URC2 1 12 2 UMODL l=1MIL N=6
TEXT: H
TEXT: H
TEXT: H
TEXT: H      N1 and N2 are the two element nodes the  RC  line  con-
TEXT: H nects,  while  N3  is the node to which the capacitances are
TEXT: H connected.  MNAME is the model name, LEN is  the  length  of
TEXT: H the  RC  line in meters.  LUMPS, if specified, is the number
TEXT: H of lumped segments to use in modeling the RC line  (see  the
TEXT: H model  description for the action taken if this parameter is
TEXT: H omitted).
TEXT: H

SUBJECT: Uniform Distributed RC Model 
TITLE: Uniform Distributed RC Model (URC)
TEXT: H
TEXT: H 3.3.5.  Uniform Distributed RC Model (URC)
TEXT: H
TEXT: H
TEXT: H      The URC model is derived from a model  proposed  by  L.
TEXT: H Gertzberrg  in 1974.  The model is accomplished by a subcir-
TEXT: H cuit type expansion of the URC line into a network of lumped
TEXT: H RC  segments  with  internally generated nodes.  The RC seg-
TEXT: H ments are in a geometric progression, increasing toward  the
TEXT: H middle  of  the  URC  line, with K as a proportionality con-
TEXT: H stant.  The number of lumped segments used, if not specified
TEXT: H for the URC line device, is determined by the following for-
TEXT: H mula:
TEXT: H                                             2
TEXT: H                     |     R C        |(K-1)|  |
TEXT: H                           _ _      2
TEXT: H                  log|F        2 J L  |-----|  |
TEXT: H                       max
TEXT: H                     |     L L        |  K  |  |
TEXT: H
TEXT: H             N =  ------------------------------
TEXT: H                              log K
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The URC line is made up strictly of resistor and  capa-
TEXT: H citor  segments  unless the ISPERL parameter is given a non-
TEXT: H zero value, in which case the capacitors are  replaced  with
TEXT: H reverse  biased diodes with a zero-bias junction capacitance
TEXT: H equivalent to the capacitance replaced, and with  a  satura-
TEXT: H tion  current  of ISPERL amps per meter of transmission line
TEXT: H and an optional series resistance equivalent to RSPERL  ohms
TEXT: H per meter.
TEXT: H
TEXT: H      name     parameter                            units   default   example   area
TEXT: H
TEXT: H  1   K        Propagation Constant                 -       2.0       1.2       -
TEXT: H  2   FMAX     Maximum Frequency of interest        Hz      1.0G      6.5Meg    -
TEXT: H  3   RPERL    Resistance per unit length           Z/m     1000      10        -
TEXT: H  4   CPERL    Capacitance per unit length          F/m     1.0e-15   1pF       -
TEXT: H  5   ISPERL   Saturation Current per unit length   A/m     0         -         -
TEXT: H  6   RSPERL   Diode Resistance per unit length     Z/m     0         -         -
TEXT: H
TEXT: H
TEXT: H

SUBJECT: TRANSISTORS AND DIODES
TITLE: TRANSISTORS AND DIODES
TEXT: H
TEXT: H 3.4.  TRANSISTORS AND DIODES
TEXT: H
TEXT: H
TEXT: H      The area factor used on the diode, BJT, JFET, and  MES-
TEXT: H FET  devices  determines  the  number of equivalent parallel
TEXT: H devices of a specified model.  The affected  parameters  are
TEXT: H marked  with  an  asterisk  under  the heading 'area' in the
TEXT: H model descriptions below.  Several geometric factors associ-
TEXT: H ated  with  the  channel and the drain and source diffusions
TEXT: H can be specified on the MOSFET device line.
TEXT: H
TEXT: H      Two different forms of initial conditions may be speci-
TEXT: H fied  for  some  devices.   The  first  form  is included to
TEXT: H improve the dc convergence for circuits  that  contain  more
TEXT: H than one stable state.  If a device is specified OFF, the dc
TEXT: H operating point is determined with the terminal voltages for
TEXT: H that device set to zero.  After convergence is obtained, the
TEXT: H program continues to iterate to obtain the exact  value  for
TEXT: H the  terminal  voltages.   If a circuit has more than one dc
TEXT: H stable state, the OFF option can be used to force the  solu-
TEXT: H tion  to  correspond  to  a  desired  state.  If a device is
TEXT: H specified OFF when in reality the device is conducting,  the
TEXT: H program  still  obtains  the  correct solution (assuming the
TEXT: H solutions converge) but more iterations are  required  since
TEXT: H the  program  must  independently  converge  to two separate
TEXT: H solutions.  The .NODESET control line serves a similar  pur-
TEXT: H pose  as  the  OFF option.  The .NODESET option is easier to
TEXT: H apply and is the preferred means to aid convergence.
TEXT: H
TEXT: H      The second form of initial conditions are specified for
TEXT: H use  with  the  transient analysis.  These are true 'initial
TEXT: H conditions' as opposed to the convergence aids  above.   See
TEXT: H the  description  of the .IC control line and the .TRAN con-
TEXT: H trol line for a detailed explanation of initial conditions.
TEXT: H
TEXT: H
TEXT: H
SUBTOPIC: SPICE:Junction Diodes
SUBTOPIC: SPICE:Diode Model 
SUBTOPIC: SPICE:Bipolar Junction Transistors 
SUBTOPIC: SPICE:BJT Models 
SUBTOPIC: SPICE:Junction FieldEffect Transistors 
SUBTOPIC: SPICE:JFET Models 
SUBTOPIC: SPICE:MOSFETs
SUBTOPIC: SPICE:MOSFET Models 
SUBTOPIC: SPICE:MESFETs
SUBTOPIC: SPICE:MESFET Models 

SUBJECT: Junction Diodes
TITLE: Junction Diodes
TEXT: H
TEXT: H 3.4.1.  Junction Diodes
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     DXXXXXXX N+ N- MNAME <AREA> <OFF> <IC=VD> <TEMP=T>
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     DBRIDGE 2 10 DIODE1
TEXT: H     DCLMP 3 7 DMOD 3.0 IC=0.2
TEXT: H
TEXT: H
TEXT: H
TEXT: H      N+ and N- are the positive and negative nodes,  respec-
TEXT: H tively.   MNAME  is the model name, AREA is the area factor,
TEXT: H and OFF indicates an (optional) starting  condition  on  the
TEXT: H device  for  dc  analysis.  If the area factor is omitted, a
TEXT: H value of 1.0 is assumed.  The (optional)  initial  condition
TEXT: H specification  using  IC=VD is intended for use with the UIC
TEXT: H option on the .TRAN control line, when a transient  analysis
TEXT: H is  desired starting from other than the quiescent operating
TEXT: H point.  The (optional) TEMP  value  is  the  temperature  at
TEXT: H which  this device is to operate, and overrides the tempera-
TEXT: H ture specification on the .OPTION control line.
TEXT: H
TEXT: H

SUBJECT: Diode Model 
TITLE: Diode Model (D)
TEXT: H
TEXT: H 3.4.2.  Diode Model (D)
TEXT: H
TEXT: H
TEXT: H      The dc characteristics of the diode are  determined  by
TEXT: H the  parameters  IS  and N.  An ohmic resistance, RS, is in-
TEXT: H cluded.  Charge storage effects are  modeled  by  a  transit
TEXT: H time,  TT, and a nonlinear depletion layer capacitance which
TEXT: H is determined by the parameters CJO, VJ, and  M.   The  tem-
TEXT: H perature  dependence of the saturation current is defined by
TEXT: H the parameters  EG,  the  energy  and  XTI,  the  saturation
TEXT: H current  temperature  exponent.   The nominal temperature at
TEXT: H which these parameters were measured is TNOM, which defaults
TEXT: H to  the circuit-wide value specified on the .OPTIONS control
TEXT: H line.  Reverse breakdown is modeled by  an  exponential  in-
TEXT: H crease in the reverse diode current and is determined by the
TEXT: H parameters BV and IBV (both of which are positive numbers).
TEXT: H
TEXT: H
TEXT: H
TEXT: H      name   parameter                           units   default    example    area
TEXT: H
TEXT: H  1   IS     saturation current                  A       1.0e-14    1.0e-14    *
TEXT: H  2   RS     ohmic resistance                    Z       0          10         *
TEXT: H  3   N      emission coefficient                -       1          1.0
TEXT: H  4   TT     transit-time                        sec     0          0.1ns
TEXT: H  5   CJO    zero-bias junction capacitance      F       0          2pF        *
TEXT: H  6   VJ     junction potential                  V       1          0.6
TEXT: H  7   M      grading coefficient                 -       0.5        0.5
TEXT: H  8   EG     activation energy                   eV      1.11       1.11 Si
TEXT: H                                                                    0.69 Sbd
TEXT: H                                                                    0.67 Ge
TEXT: H  9   XTI    saturation-current temp. exp        -       3.0        3.0 jn
TEXT: H                                                                    2.0 Sbd
TEXT: H 10   KF     flicker noise coefficient           -       0
TEXT: H 11   AF     flicker noise exponent              -       1
TEXT: H 12   FC     coefficient for forward-bias        -       0.5
TEXT: H             depletion capacitance formula
TEXT: H 13   BV     reverse breakdown voltage           V       infinite   40.0
TEXT: H 14   IBV    current at breakdown voltage        A       1.0e-3
TEXT: H                                                 o
TEXT: H 15   TNOM   parameter measurement temperature    C      27         50
TEXT: H
TEXT: H
TEXT: H
TEXT: H

SUBJECT: Bipolar Junction Transistors 
TITLE: Bipolar Junction Transistors (BJTs)
TEXT: H
TEXT: H 3.4.3.  Bipolar Junction Transistors (BJTs)
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     QXXXXXXX NC NB NE <NS> MNAME <AREA> <OFF> <IC=VBE, VCE> <TEMP=T>
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     Q23 10 24 13 QMOD IC=0.6, 5.0
TEXT: H     Q50A 11 26 4 20 MOD1
TEXT: H
TEXT: H
TEXT: H
TEXT: H      NC, NB, and NE are the  collector,  base,  and  emitter
TEXT: H nodes,  respectively.   NS is the (optional) substrate node.
TEXT: H If unspecified, ground is used.  MNAME is  the  model  name,
TEXT: H AREA  is  the  area  factor, and OFF indicates an (optional)
TEXT: H initial condition on the device for the dc analysis.  If the
TEXT: H area  factor  is  omitted,  a  value of 1.0 is assumed.  The
TEXT: H (optional) initial condition specification using IC=VBE, VCE
TEXT: H is intended for use with the UIC option on the .TRAN control
TEXT: H line, when a transient analysis  is  desired  starting  from
TEXT: H other  than the quiescent operating point.  See the .IC con-
TEXT: H trol line description for a better way to set transient ini-
TEXT: H tial  conditions.  The (optional) TEMP value is the tempera-
TEXT: H ture at which this device is to operate, and  overrides  the
TEXT: H temperature specification on the .OPTION control line.
TEXT: H
TEXT: H

SUBJECT: BJT Models 
TITLE: BJT Models (NPN/PNP)
TEXT: H
TEXT: H 3.4.4.  BJT Models (NPN/PNP)
TEXT: H
TEXT: H
TEXT: H      The bipolar junction transistor model in  SPICE  is  an
TEXT: H adaptation  of  the  integral charge control model of Gummel
TEXT: H and Poon.  This modified Gummel-Poon model extends the  ori-
TEXT: H ginal  model to include several effects at high bias levels.
TEXT: H The model automatically simplifies to the simpler Ebers-Moll
TEXT: H model when certain parameters are not specified.  The param-
TEXT: H eter names used in the modified Gummel-Poon model have  been
TEXT: H chosen to be more easily understood by the program user, and
TEXT: H to reflect better both physical and circuit design thinking.
TEXT: H
TEXT: H
TEXT: H      The dc model is defined by the parameters IS,  BF,  NF,
TEXT: H ISE,  IKF,  and  NE which determine the forward current gain
TEXT: H characteristics, IS, BR, NR, ISC, IKR, and NC  which  deter-
TEXT: H mine  the  reverse current gain characteristics, and VAF and
TEXT: H VAR which determine the output conductance for  forward  and
TEXT: H reverse regions.  Three ohmic resistances RB, RC, and RE are
TEXT: H included, where RB can  be  high  current  dependent.   Base
TEXT: H charge  storage  is  modeled  by forward and reverse transit
TEXT: H times, TF and TR, the forward transit  time  TF  being  bias
TEXT: H dependent  if desired, and nonlinear depletion layer capaci-
TEXT: H tances which are determined by CJE, VJE, and MJE for the B-E
TEXT: H junction  ,  CJC, VJC, and MJC for the B-C junction and CJS,
TEXT: H VJS, and MJS for  the  C-S  (Collector-Substrate)  junction.
TEXT: H The temperature dependence of the saturation current, IS, is
TEXT: H determined by the energy-gap, EG, and the saturation current
TEXT: H temperature  exponent,  XTI.  Additionally base current tem-
TEXT: H perature dependence  is  modeled  by  the  beta  temperature
TEXT: H exponent  XTB  in  the  new model.  The values specified are
TEXT: H assumed to have been measured at the temperature TNOM, which
TEXT: H can  be specified on the .OPTIONS control line or overridden
TEXT: H by a specification on the .MODEL line.
TEXT: H
TEXT: H      The  BJT parameters used in  the  modified  Gummel-Poon
TEXT: H model are listed below.  The parameter names used in earlier
TEXT: H versions of SPICE2 are still accepted.
TEXT: H
TEXT: H         Modified Gummel-Poon BJT Parameters.
TEXT: H
TEXT: H
TEXT: H      name   parameter                               units   default    example   area
TEXT: H
TEXT: H 1    IS     transport saturation current            A       1.0e-16    1.0e-15   *
TEXT: H 2    BF     ideal maximum forward beta              -       100        100
TEXT: H 3    NF     forward current emission coefficient    -       1.0        1
TEXT: H 4    VAF    forward Early voltage                   V       infinite   200
TEXT: H 5    IKF    corner for forward beta
TEXT: H             high current roll-off                   A       infinite   0.01      *
TEXT: H 6    ISE    B-E leakage saturation current          A       0          1.0e-13   *
TEXT: H 7    NE     B-E leakage emission coefficient        -       1.5        2
TEXT: H 8    BR     ideal maximum reverse beta              -       1          0.1
TEXT: H 9    NR     reverse current emission coefficient    -       1          1
TEXT: H 10   VAR    reverse Early voltage                   V       infinite   200
TEXT: H 11   IKR    corner for reverse beta
TEXT: H             high current roll-off                   A       infinite   0.01      *
TEXT: H 12   ISC    B-C leakage saturation current          A       0          1.0e-13   *
TEXT: H 13   NC     B-C leakage emission coefficient        -       2          1.5
TEXT: H 14   RB     zero bias base resistance               Z       0          100       *
TEXT: H 15   IRB    current where base resistance
TEXT: H             falls halfway to its min value          A       infinite   0.1       *
TEXT: H 16   RBM    minimum base resistance
TEXT: H             at high currents                        Z       RB         10        *
TEXT: H 17   RE     emitter resistance                      Z       0          1         *
TEXT: H 18   RC     collector resistance                    Z       0          10        *
TEXT: H 19   CJE    B-E zero-bias depletion capacitance     F       0          2pF       *
TEXT: H 20   VJE    B-E built-in potential                  V       0.75       0.6
TEXT: H 21   MJE    B-E junction exponential factor         -       0.33       0.33
TEXT: H 22   TF     ideal forward transit time              sec     0          0.1ns
TEXT: H 23   XTF    coefficient for bias dependence of TF   -       0
TEXT: H 24   VTF    voltage describing VBC
TEXT: H             dependence of TF                        V       infinite
TEXT: H 25   ITF    high-current parameter
TEXT: H             for effect on TF                        A       0                    *
TEXT: H 26   PTF    excess phase at freq=1.0/(TF*2PI) Hz    deg     0
TEXT: H 27   CJC    B-C zero-bias depletion capacitance     F       0          2pF       *
TEXT: H 28   VJC    B-C built-in potential                  V       0.75       0.5
TEXT: H 29   MJC    B-C junction exponential factor         -       0.33       0.5
TEXT: H 30   XCJC   fraction of B-C depletion capacitance   -       1
TEXT: H             connected to internal base node
TEXT: H 31   TR     ideal reverse transit time              sec     0          10ns
TEXT: H 32   CJS    zero-bias collector-substrate
TEXT: H             capacitance                             F       0          2pF       *
TEXT: H 33   VJS    substrate junction built-in potential   V       0.75
TEXT: H 34   MJS    substrate junction exponential factor   -       0          0.5
TEXT: H 35   XTB    forward and reverse beta
TEXT: H             temperature exponent                    -       0
TEXT: H 36   EG     energy gap for temperature
TEXT: H             effect on IS                            eV      1.11
TEXT: H 37   XTI    temperature exponent for effect on IS   -       3
TEXT: H 38   KF     flicker-noise coefficient               -       0
TEXT: H 39   AF     flicker-noise exponent                  -       1
TEXT: H 40   FC     coefficient for forward-bias
TEXT: H             depletion capacitance formula           -       0.5
TEXT: H                                                     o
TEXT: H 41   TNOM   Parameter measurement temperature        C      27         50
TEXT: H
TEXT: H
TEXT: H

SUBJECT: Junction FieldEffect Transistors 
TITLE: Junction Field-Effect Transistors (JFETs)
TEXT: H
TEXT: H 3.4.5.  Junction Field-Effect Transistors (JFETs)
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     JXXXXXXX ND NG NS MNAME <AREA> <OFF> <IC=VDS, VGS> <TEMP=T>
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     J1 7 2 3 JM1 OFF
TEXT: H
TEXT: H
TEXT: H
TEXT: H      ND, NG, and NS are the drain, gate, and  source  nodes,
TEXT: H respectively.   MNAME  is  the  model name, AREA is the area
TEXT: H factor, and OFF indicates an (optional) initial condition on
TEXT: H the  device for dc analysis.  If the area factor is omitted,
TEXT: H a value of 1.0 is assumed.  The (optional) initial condition
TEXT: H specification,  using  IC=VDS,  VGS is intended for use with
TEXT: H the UIC option on the .TRAN control line, when  a  transient
TEXT: H analysis  is  desired starting from other than the quiescent
TEXT: H operating point.  See the .IC control line for a better  way
TEXT: H to set initial conditions.  The (optional) TEMP value is the
TEXT: H temperature at which this device is to  operate,  and  over-
TEXT: H rides  the  temperature specification on the .OPTION control
TEXT: H line.
TEXT: H
TEXT: H

SUBJECT: JFET Models 
TITLE: JFET Models (NJF/PJF)
TEXT: H
TEXT: H 3.4.6.  JFET Models (NJF/PJF)
TEXT: H
TEXT: H
TEXT: H      The JFET model is derived from the FET model of  Shich-
TEXT: H man  and  Hodges.  The dc characteristics are defined by the
TEXT: H parameters VTO and BETA, which determine  the  variation  of
TEXT: H drain  current  with  gate voltage, LAMBDA, which determines
TEXT: H the output conductance, and IS, the  saturation  current  of
TEXT: H the  two  gate junctions.  Two ohmic resistances, RD and RS,
TEXT: H are included.  Charge storage is modeled by nonlinear deple-
TEXT: H tion  layer  capacitances for both gate junctions which vary
TEXT: H as the -1/2 power of junction voltage and are defined by the
TEXT: H parameters CGS, CGD, and PB.
TEXT: H
TEXT: H      Note that in Spice3f and later, a fitting  parameter  B
TEXT: H has been added.  For details, see [9].
TEXT: H
TEXT: H
TEXT: H      name     parameter                                  units   default   example   area
TEXT: H
TEXT: H  1   VTO      threshold voltage (V                       V       -2.0      -2.0
TEXT: H                                   TO                        2
TEXT: H  2   BETA     transconductance parameter (B)             A/V     1.0e-4    1.0e-3    *
TEXT: H  3   LAMBDA   channel-length modulation
TEXT: H               parameter (L)                              1/V     0         1.0e-4
TEXT: H  4   RD       drain ohmic resistance                     Z       0         100       *
TEXT: H  5   RS       source ohmic resistance                    Z       0         100       *
TEXT: H  6   CGS      zero-bias G-S junction capacitance (C  )   F       0         5pF       *
TEXT: H                                                    gs
TEXT: H  7   CGD      zero-bias G-D junction capacitance (C  )   F       0         1pF       *
TEXT: H                                                    gs
TEXT: H  8   PB       gate junction potential                    V       1         0.6
TEXT: H  9   IS       gate junction saturation current (I )      A       1.0e-14   1.0e-14   *
TEXT: H                                                  S
TEXT: H 10   B        doping tail parameter                      -       1         1.1
TEXT: H 11   KF       flicker noise coefficient                  -       0
TEXT: H 12   AF       flicker noise exponent                     -       1
TEXT: H 13   FC       coefficient for forward-bias               -       0.5
TEXT: H               depletion capacitance formula
TEXT: H                                                          o
TEXT: H 14   TNOM     parameter measurement temperature           C      27        50
TEXT: H
TEXT: H
TEXT: H
TEXT: H

SUBJECT: MOSFETs
TITLE: MOSFETs
TEXT: H
TEXT: H 3.4.7.  MOSFETs
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     MXXXXXXX ND NG NS NB MNAME <L=VAL> <W=VAL> <AD=VAL> <AS=VAL>
TEXT: H     + <PD=VAL> <PS=VAL> <NRD=VAL> <NRS=VAL> <OFF>
TEXT: H     + <IC=VDS, VGS, VBS> <TEMP=T>
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     M1 24 2 0 20 TYPE1
TEXT: H     M31 2 17 6 10 MODM L=5U W=2U
TEXT: H     M1 2 9 3 0 MOD1 L=10U W=5U AD=100P AS=100P PD=40U PS=40U
TEXT: H
TEXT: H
TEXT: H ND, NG, NS, and NB are the drain,  gate,  source,  and  bulk
TEXT: H (substrate)  nodes,  respectively.  MNAME is the model name.
TEXT: H L and W are the channel length and width, in meters.  AD and
TEXT: H AS  are  the  areas  of  the drain and source diffusions, in
TEXT: H       2
TEXT: H meters .  Note that the suffix U specifies microns (1e-6  m)
TEXT: H                            2
TEXT: H and  P  sq-microns (1e-12 m ). If any of L, W, AD, or AS are
TEXT: H not specified, default values are used.  The use of defaults
TEXT: H simplifies  input  file  preparation, as well as the editing
TEXT: H required if device geometries are to be changed.  PD and  PS
TEXT: H are  the  perimeters  of  the drain and source junctions, in
TEXT: H meters.  NRD and NRS  designate  the  equivalent  number  of
TEXT: H squares  of  the  drain  and source diffusions; these values
TEXT: H multiply the sheet resistance RSH specified  on  the  .MODEL
TEXT: H control line for an accurate representation of the parasitic
TEXT: H series drain and source resistance of each  transistor.   PD
TEXT: H and  PS  default to 0.0 while NRD and NRS to 1.0.  OFF indi-
TEXT: H cates an (optional) initial condition on the device  for  dc
TEXT: H analysis.   The  (optional)  initial condition specification
TEXT: H using IC=VDS, VGS, VBS is intended  for  use  with  the  UIC
TEXT: H option  on the .TRAN control line, when a transient analysis
TEXT: H is desired starting from other than the quiescent  operating
TEXT: H point.   See the .IC control line for a better and more con-
TEXT: H venient way to specify transient  initial  conditions.   The
TEXT: H (optional)  TEMP value is the temperature at which this dev-
TEXT: H ice is to operate, and overrides the temperature  specifica-
TEXT: H tion  on the .OPTION control line.  The temperature specifi-
TEXT: H cation is ONLY valid for level 1, 2, 3, and 6  MOSFETs,  not
TEXT: H for level 4 or 5 (BSIM) devices.
TEXT: H
TEXT: H

SUBJECT: MOSFET Models 
TITLE: MOSFET Models (NMOS/PMOS)
TEXT: H
TEXT: H 3.4.8.  MOSFET Models (NMOS/PMOS)
TEXT: H
TEXT: H
TEXT: H      SPICE provides four MOSFET device models, which  differ
TEXT: H in  the formulation of the I-V characteristic.  The variable
TEXT: H LEVEL specifies the model to be used:
TEXT: H
TEXT: H     LEVEL=1 ->    Shichman-Hodges
TEXT: H     LEVEL=2 ->    MOS2 (as described in [1])
TEXT: H     LEVEL=3 ->    MOS3, a semi-empirical model(see [1])
TEXT: H     LEVEL=4 ->    BSIM (as described in [3])
TEXT: H     LEVEL=5 ->    new BSIM (BSIM2; as described in [5])
TEXT: H     LEVEL=6 ->    MOS6 (as described in [2])
TEXT: H
TEXT: H
TEXT: H The dc characteristics of the level 1 through level  3  MOS-
TEXT: H FETs  are  defined by the device parameters VTO, KP, LAMBDA,
TEXT: H PHI and GAMMA.  These parameters are computed  by  SPICE  if
TEXT: H process  parameters  (NSUB,  TOX,  ...) are given, but user-
TEXT: H specified values always override.  VTO  is  positive  (nega-
TEXT: H tive)  for  enhancement  mode  and  negative  (positive) for
TEXT: H depletion  mode  N-channel  (P-channel)   devices.    Charge
TEXT: H storage is modeled by three constant capacitors, CGSO, CGDO,
TEXT: H and CGBO which represent overlap capacitances, by  the  non-
TEXT: H linear thin-oxide capacitance which is distributed among the
TEXT: H gate, source, drain, and bulk regions, and by the  nonlinear
TEXT: H depletion-layer  capacitances  for  both substrate junctions
TEXT: H divided into bottom and periphery, which vary as the MJ  and
TEXT: H MJSW  power of junction voltage respectively, and are deter-
TEXT: H mined by the parameters CBD, CBS, CJ, CJSW, MJ, MJSW and PB.
TEXT: H Charge  storage  effects are modeled by the piecewise linear
TEXT: H voltages-dependent capacitance model proposed by Meyer.  The
TEXT: H thin-oxide  charge-storage effects are treated slightly dif-
TEXT: H ferent for the LEVEL=1 model.  These voltage-dependent capa-
TEXT: H citances  are included only if TOX is specified in the input
TEXT: H description and they are represented using Meyer's  formula-
TEXT: H tion.
TEXT: H
TEXT: H      There is some overlap among the  parameters  describing
TEXT: H the  junctions, e.g. the reverse current can be input either
TEXT: H                              2
TEXT: H as IS (in A) or as JS (in A/m ). Whereas  the  first  is  an
TEXT: H absolute value the second is multiplied by AD and AS to give
TEXT: H the reverse  current  of  the  drain  and  source  junctions
TEXT: H respectively.   This methodology has been chosen since there
TEXT: H is no sense in relating always junction characteristics with
TEXT: H AD  and  AS  entered  on  the  device line; the areas can be
TEXT: H defaulted.  The same idea  applies  also  to  the  zero-bias
TEXT: H junction capacitances CBD and CBS (in F) on one hand, and CJ
TEXT: H        2
TEXT: H (in F/m ) on the other.   The  parasitic  drain  and  source
TEXT: H series  resistance  can be expressed as either RD and RS (in
TEXT: H ohms) or RSH (in ohms/sq.), the latter being  multiplied  by
TEXT: H the number of squares NRD and NRS input on the device line.
TEXT: H
TEXT: H      A discontinuity in the MOS level 3 model  with  respect
TEXT: H to  the  KAPPA  parameter has been detected (see [10]).  The
TEXT: H supplied fix has been implemented  in  Spice3f2  and  later.
TEXT: H Since  this  fix  may  affect  parameter fitting, the option
TEXT: H "BADMOS3" may be set to use the old implementation (see  the
TEXT: H section  on  simulation  variables and the ".OPTIONS" line).
TEXT: H SPICE level 1, 2,  3 and 6 parameters:
TEXT: H
TEXT: H
TEXT: H      name     parameter                               units   default           example
TEXT: H
TEXT: H 1    LEVEL    model index                             -       1
TEXT: H 2    VTO      zero-bias threshold voltage (V  )       V       0.0               1.0
TEXT: H                                             TO           2
TEXT: H 3    KP       transconductance parameter              A/V     2.0e-5            3.1e-5
TEXT: H                                                        1/2
TEXT: H 4    GAMMA    bulk threshold parameter (\)            V       0.0               0.37
TEXT: H 5    PHI      surface potential (U)                   V       0.6               0.65
TEXT: H 6    LAMBDA   channel-length modulation
TEXT: H               (MOS1 and MOS2 only) (L)                1/V     0.0               0.02
TEXT: H 7    RD       drain ohmic resistance                  Z       0.0               1.0
TEXT: H 8    RS       source ohmic resistance                 Z       0.0               1.0
TEXT: H 9    CBD      zero-bias B-D junction capacitance      F       0.0               20fF
TEXT: H 10   CBS      zero-bias B-S junction capacitance      F       0.0               20fF
TEXT: H 11   IS       bulk junction saturation current (I )   A       1.0e-14           1.0e-15
TEXT: H                                                  S
TEXT: H 12   PB       bulk junction potential                 V       0.8               0.87
TEXT: H 13   CGSO     gate-source overlap capacitance
TEXT: H               per meter channel width                 F/m     0.0               4.0e-11
TEXT: H 14   CGDO     gate-drain overlap capacitance
TEXT: H               per meter channel width                 F/m     0.0               4.0e-11
TEXT: H 15   CGBO     gate-bulk overlap capacitance
TEXT: H               per meter channel length                F/m     0.0               2.0e-10
TEXT: H 16   RSH      drain and source diffusion
TEXT: H               sheet resistance                        Z/[]    0.0               10.0
TEXT: H 17   CJ       zero-bias bulk junction bottom cap.
TEXT: H                                                          2
TEXT: H               per sq-meter of junction area           F/m     0.0               2.0e-4
TEXT: H 18   MJ       bulk junction bottom grading coeff.     -       0.5               0.5
TEXT: H 19   CJSW     zero-bias bulk junction sidewall cap.
TEXT: H               per meter of junction perimeter         F/m     0.0               1.0e-9
TEXT: H 20   MJSW     bulk junction sidewall grading coeff.   -       0.50(level1)
TEXT: H                                                               0.33(level2, 3)
TEXT: H 21   JS       bulk junction saturation current
TEXT: H                                                          2
TEXT: H               per sq-meter of junction area           A/m                       1.0e-8
TEXT: H 22   TOX      oxide thickness                         meter   1.0e-7            1.0e-7
TEXT: H                                                           3
TEXT: H 23   NSUB     substrate doping                        1/cm    0.0               4.0e15
TEXT: H                                                           2
TEXT: H 24   NSS      surface state density                   1/cm    0.0               1.0e10
TEXT: H                                                           2
TEXT: H 25   NFS      fast surface state density              1/cm    0.0               1.0e10
TEXT: H
TEXT: H                          continued
TEXT: H
TEXT: H      name    parameter                              units    default   example
TEXT: H
TEXT: H 26   TPG     type of gate material:                 -        1.0
TEXT: H                  +1 opp. to substrate
TEXT: H                  -1 same as substrate
TEXT: H                   0  Al gate
TEXT: H 27   XJ      metallurgical junction depth           meter    0.0       1M
TEXT: H 28   LD      lateral diffusion                      meter    0.0       0.8M
TEXT: H                                                       2
TEXT: H 29   UO      surface mobility                       cm /Vs   600       700
TEXT: H 30   UCRIT   critical field for mobility
TEXT: H              degradation (MOS2 only)                V/cm     1.0e4     1.0e4
TEXT: H 31   UEXP    critical field exponent in
TEXT: H              mobility degradation (MOS2 only)       -        0.0       0.1
TEXT: H 32   UTRA    transverse field coeff. (mobility)
TEXT: H              (deleted for MOS2)                     -        0.0       0.3
TEXT: H 33   VMAX    maximum drift velocity of carriers     m/s      0.0       5.0e4
TEXT: H 34   NEFF    total channel-charge (fixed and
TEXT: H              mobile) coefficient (MOS2 only)        -        1.0       5.0
TEXT: H 35   KF      flicker noise coefficient              -        0.0       1.0e-26
TEXT: H 36   AF      flicker noise exponent                 -        1.0       1.2
TEXT: H 37   FC      coefficient for forward-bias
TEXT: H              depletion capacitance formula          -        0.5
TEXT: H 38   DELTA   width effect on threshold voltage
TEXT: H              (MOS2 and MOS3)                        -        0.0       1.0
TEXT: H 39   THETA   mobility modulation (MOS3 only)        1/V      0.0       0.1
TEXT: H 40   ETA     static feedback (MOS3 only)            -        0.0       1.0
TEXT: H 41   KAPPA   saturation field factor (MOS3 only)    -        0.2       0.5
TEXT: H                                                     o
TEXT: H 42   TNOM    parameter measurement temperature       C       27        50
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The level 4 and level 5 (BSIM1  and  BSIM2)  parameters
TEXT: H are  all  values obtained from process characterization, and
TEXT: H can be generated automatically.  J. Pierret [4] describes  a
TEXT: H means  of  generating  a  'process'  file,  and  the program
TEXT: H Proc2Mod provided with SPICE3 converts this file into a  se-
TEXT: H quence  of  BSIM1 ".MODEL" lines suitable for inclusion in a
TEXT: H SPICE input file.  Parameters marked below with an * in  the
TEXT: H l/w  column also have corresponding parameters with a length
TEXT: H and width dependency.  For example, VFB is the basic parame-
TEXT: H ter  with  units  of Volts, and LVFB and WVFB also exist and
TEXT: H have units of Volt-Mmeter The formula
TEXT: H
TEXT: H                            P            P
TEXT: H                             L            W
TEXT: H               P = P  + ---------- + ----------
TEXT: H                    0
TEXT: H                        L            W
TEXT: H                         effective    effective
TEXT: H
TEXT: H is used to evaluate the  parameter  for  the  actual  device
TEXT: H specified with
TEXT: H
TEXT: H                   L          = L      - DL
TEXT: H                    effective    input
TEXT: H and
TEXT: H
TEXT: H                   W          = W      - DW
TEXT: H                    effective    input
TEXT: H
TEXT: H
TEXT: H
TEXT: H      Note that unlike the other models in  SPICE,  the  BSIM
TEXT: H model  is  designed  for use with a process characterization
TEXT: H system that provides all the parameters, thus there  are  no
TEXT: H defaults  for  the  parameters,  and leaving one out is con-
TEXT: H sidered an error.  For an example set of parameters and  the
TEXT: H format  of  a  process  file,  see the SPICE2 implementation
TEXT: H notes[3].
TEXT: H
TEXT: H      For more information on BSIM2, see reference [5].
TEXT: H
TEXT: H SPICE BSIM (level 4) parameters.
TEXT: H
TEXT: H
TEXT: H name    parameter                                                                 units      l/w
TEXT: H
TEXT: H VFB     flat-band voltage                                                         V          *
TEXT: H PHI     surface inversion potential                                               V          *
TEXT: H                                                                                    1/2
TEXT: H K1      body effect coefficient                                                   V          *
TEXT: H K2      drain/source depletion charge-sharing coefficient                         -          *
TEXT: H ETA     zero-bias drain-induced barrier-lowering coefficient                      -          *
TEXT: H                                                                                     2
TEXT: H MUZ     zero-bias mobility                                                        cm /V-s
TEXT: H DL      shortening of channel                                                     Mm
TEXT: H DW      narrowing of channel                                                      Mm
TEXT: H                                                                                    -1
TEXT: H U0      zero-bias transverse-field mobility degradation coefficient               V          *
TEXT: H U1      zero-bias velocity saturation coefficient                                 Mm/V       *
TEXT: H                                                                                     2  2
TEXT: H X2MZ    sens. of mobility to substrate bias at v  =0                              cm /V -s   *
TEXT: H                                                 ds                                 -1
TEXT: H X2E     sens. of drain-induced barrier lowering effect to substrate bias          V          *
TEXT: H                                                                                    -1
TEXT: H X3E     sens. of drain-induced barrier lowering effect to drain bias at V  =V     V          *
TEXT: H                                                                          ds  dd    -2
TEXT: H X2U0    sens. of transverse field mobility degradation effect to substrate bias   V          *
TEXT: H                                                                                      -2
TEXT: H X2U1    sens. of velocity saturation effect to substrate bias                     MmV        *
TEXT: H                                                                                     2  2
TEXT: H MUS     mobility at zero substrate bias and at V  =V                              cm /V -s
TEXT: H                                                 ds  dd                              2  2
TEXT: H X2MS    sens. of mobility to substrate bias at V  =V                              cm /V -s   *
TEXT: H                                                 ds  dd                              2  2
TEXT: H X3MS    sens. of mobility to drain bias at V  =V                                  cm /V -s   *
TEXT: H                                             ds  dd                                   -2
TEXT: H X3U1    sens. of velocity saturation effect on drain bias at V  =V                MmV        *
TEXT: H                                                               ds  dd
TEXT: H TOX     gate oxide thickness                                                      Mm
TEXT: H                                                                                   o
TEXT: H TEMP    temperature at which parameters were measured                              C
TEXT: H VDD     measurement bias range                                                    V
TEXT: H CGDO    gate-drain overlap capacitance per meter channel width                    F/m
TEXT: H CGSO    gate-source overlap capacitance per meter channel width                   F/m
TEXT: H CGBO    gate-bulk overlap capacitance per meter channel length                    F/m
TEXT: H XPART   gate-oxide capacitance-charge model flag                                  -
TEXT: H N0      zero-bias subthreshold slope coefficient                                  -          *
TEXT: H NB      sens. of subthreshold slope to substrate bias                             -          *
TEXT: H ND      sens. of subthreshold slope to drain bias                                 -          *
TEXT: H RSH     drain and source diffusion sheet resistance                               Z/[]
TEXT: H                                                                                      2
TEXT: H JS      source drain junction current density                                     A/m
TEXT: H PB      built in potential of source drain junction                               V
TEXT: H MJ      Grading coefficient of source drain junction                              -
TEXT: H PBSW    built in potential of source, drain junction sidewall                     V
TEXT: H MJSW    grading coefficient of source drain junction sidewall                     -
TEXT: H                                                                                      2
TEXT: H CJ      Source drain junction capacitance per unit area                           F/m
TEXT: H CJSW    source drain junction sidewall capacitance per unit length                F/m
TEXT: H WDF     source drain junction default width                                       m
TEXT: H DELL    Source drain junction length reduction                                    m
TEXT: H
TEXT: H
TEXT: H
TEXT: H      XPART = 0 selects a 40/60 drain/source charge partition
TEXT: H in  saturation,  while  XPART=1 selects a 0/100 drain/source
TEXT: H charge partition.
TEXT: H
TEXT: H
TEXT: H      ND, NG, and NS are the drain, gate, and  source  nodes,
TEXT: H respectively.   MNAME  is  the  model name, AREA is the area
TEXT: H factor, and OFF indicates an (optional) initial condition on
TEXT: H the  device for dc analysis.  If the area factor is omitted,
TEXT: H a value of 1.0 is assumed.  The (optional) initial condition
TEXT: H specification,  using  IC=VDS,  VGS is intended for use with
TEXT: H the UIC option on the .TRAN control line, when  a  transient
TEXT: H analysis  is  desired starting from other than the quiescent
TEXT: H operating point.  See the .IC control line for a better  way
TEXT: H to set initial conditions.
TEXT: H
TEXT: H

SUBJECT: MESFETs
TITLE: MESFETs
TEXT: H
TEXT: H 3.4.9.  MESFETs
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     ZXXXXXXX ND NG NS MNAME <AREA> <OFF> <IC=VDS, VGS>
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     Z1 7 2 3 ZM1 OFF
TEXT: H
TEXT: H
TEXT: H
TEXT: H

SUBJECT: MESFET Models 
TITLE: MESFET Models (NMF/PMF)
TEXT: H
TEXT: H 3.4.10.  MESFET Models (NMF/PMF)
TEXT: H
TEXT: H
TEXT: H      The MESFET model is derived from the GaAs FET model  of
TEXT: H Statz  et al.  as described in [11].  The dc characteristics
TEXT: H are defined by the parameters VTO, B, and BETA, which deter-
TEXT: H mine  the  variation of drain current with gate voltage, AL-
TEXT: H PHA, which determines saturation voltage, and LAMBDA,  which
TEXT: H determines  the  output  conductance.  The formula are given
TEXT: H by:
TEXT: H
TEXT: H                                   3
TEXT: H                  2
TEXT: H        B (V  -V )    |    |   V  |  |                             3
TEXT: H            gs  T               ds                                 _
TEXT: H I  = --------------- |1 - |1-A---|  |(1 + L V  )   for  0 < V   <
TEXT: H  d                                           ds              ds
TEXT: H      1 + b(V   - V ) |    |    3 |  |                             A
TEXT: H             gs    T
TEXT: H                          2
TEXT: H                B (V  -V )                                     3
TEXT: H                    gs  T                                      _
TEXT: H         I  = ---------------(1 + L V  )            for  V   >
TEXT: H          d                          ds                   ds
TEXT: H              1 + b(V   - V )                                  A
TEXT: H                     gs    T
TEXT: H
TEXT: H
TEXT: H      Two ohmic resistances, RD and RS, are included.  Charge
TEXT: H storage  is  modeled  by  total gate charge as a function of
TEXT: H gate-drain and gate-source voltages and is  defined  by  the
TEXT: H parameters CGS, CGD, and PB.
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H      name     parameter                            units   default   example   area
TEXT: H
TEXT: H  1   VTO      pinch-off voltage                    V       -2.0      -2.0
TEXT: H                                                       2
TEXT: H  2   BETA     transconductance parameter           A/V     1.0e-4    1.0e-3    *
TEXT: H  3   B        doping tail extending parameter      1/V     0.3       0.3       *
TEXT: H  4   ALPHA    saturation voltage parameter         1/V     2         2         *
TEXT: H  5   LAMBDA   channel-length modulation
TEXT: H               parameter                            1/V     0         1.0e-4
TEXT: H  6   RD       drain ohmic resistance               Z       0         100       *
TEXT: H  7   RS       source ohmic resistance              Z       0         100       *
TEXT: H  8   CGS      zero-bias G-S junction capacitance   F       0         5pF       *
TEXT: H  9   CGD      zero-bias G-D junction capacitance   F       0         1pF       *
TEXT: H 10   PB       gate junction potential              V       1         0.6
TEXT: H 11   KF       flicker noise coefficient            -       0
TEXT: H 12   AF       flicker noise exponent               -       1
TEXT: H 13   FC       coefficient for forward-bias         -       0.5
TEXT: H               depletion capacitance formula
TEXT: H
TEXT: H

SUBJECT: ANALYSES AND OUTPUT CONTROL
TITLE: ANALYSES AND OUTPUT CONTROL
TEXT: H
TEXT: H 4.  ANALYSES AND OUTPUT CONTROL
TEXT: H
TEXT: H
TEXT: H      The following command lines are for specifying analyses
TEXT: H or plots within the circuit description file.  Parallel com-
TEXT: H mands exist in the interactive command interpreter (detailed
TEXT: H in  the  following  section).  Specifying analyses and plots
TEXT: H (or tables) in the input file  is  useful  for  batch  runs.
TEXT: H Batch  mode is entered when either the -b option is given or
TEXT: H when the default input source is redirected from a file.  In
TEXT: H batch  mode,  the analyses specified by the control lines in
TEXT: H the input file (e.g. ".ac", ".tran", etc.)  are  immediately
TEXT: H executed (unless ".control" lines exists; see the section on
TEXT: H the interactive command interpretor).   If  the  -r  rawfile
TEXT: H option  is  given  then  all  data generated is written to a
TEXT: H Spice3 rawfile.  The rawfile  may  be  read  by  either  the
TEXT: H interactive  mode  of  Spice3 or by nutmeg; see the previous
TEXT: H section for details.  In this  case,  the  .SAVE  line  (see
TEXT: H below)  may  be  used to record the value of internal device
TEXT: H variables (see Appendix B).
TEXT: H
TEXT: H      If a rawfile is not specified, then  output  plots  (in
TEXT: H "line-printer"  form) and tables can be printed according to
TEXT: H the .PRINT, .PLOT, and .FOUR control lines, described  next.
TEXT: H .PLOT,  .PRINT,  and .FOUR lines are meant for compatibility
TEXT: H with Spice2.
TEXT: H
SUBTOPIC: SPICE:SIMULATOR VARIABLES 
SUBTOPIC: SPICE:INITIAL CONDITIONS
SUBTOPIC: SPICE:ANALYSES
SUBTOPIC: SPICE:BATCH OUTPUT

SUBJECT: SIMULATOR VARIABLES 
TITLE: SIMULATOR VARIABLES (.OPTIONS)
TEXT: H
TEXT: H 4.1.  SIMULATOR VARIABLES (.OPTIONS)
TEXT: H
TEXT: H
TEXT: H      Various parameters  of  the  simulations  available  in
TEXT: H Spice3  can  be  altered  to control the accuracy, speed, or
TEXT: H default values for some devices.  These  parameters  may  be
TEXT: H changed  via  the "set" command (described later in the sec-
TEXT: H tion on the interactive front-end)  or  via  the  ".OPTIONS"
TEXT: H line:
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     .OPTIONS OPT1 OPT2 ... (or OPT=OPTVAL ...)
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     .OPTIONS RELTOL=.005 TRTOL=8
TEXT: H
TEXT: H
TEXT: H      The options line allows the user to reset program  con-
TEXT: H trol  and  user  options  for  specific simulation purposes.
TEXT: H Additional options for Nutmeg may be specified as  well  and
TEXT: H take  effect  when  Nutmeg  reads  the  input file.  Options
TEXT: H specified to Nutmeg via the 'set' command are also passed on
TEXT: H to  SPICE3 as if specified on a .OPTIONS line.  See the fol-
TEXT: H lowing section on the interactive  command  interpreter  for
TEXT: H the parameters which may be set with a .OPTIONS line and the
TEXT: H format of the 'set' command.  Any combination of the follow-
TEXT: H ing  options  may  be  included,  in any order.  'x' (below)
TEXT: H represents some positive number.
TEXT: H
TEXT: H option         effect
TEXT: H
TEXT: H ABSTOL=x       resets the absolute current error tolerance of the
TEXT: H                program.
TEXT: H                The default value is 1 picoamp.
TEXT: H BADMOS3        Use the older version of the MOS3 model with the "kappa"
TEXT: H                discontinuity.
TEXT: H CHGTOL=x       resets the charge tolerance of the program.  The default
TEXT: H                value is 1.0e-14.
TEXT: H DEFAD=x        resets the value for MOS drain diffusion area; the
TEXT: H                default is 0.0.
TEXT: H DEFAS=x        resets the value for MOS source diffusion area; the
TEXT: H                default is 0.0.
TEXT: H DEFL=x         resets the value for MOS channel length; the default
TEXT: H                is 100.0 micrometer.
TEXT: H DEFW=x         resets the value for MOS channel width; the default
TEXT: H                is 100.0 micrometer.
TEXT: H GMIN=x         resets the value of GMIN, the minimum conductance
TEXT: H                allowed by the program.
TEXT: H                The default value is 1.0e-12.
TEXT: H ITL1=x         resets the dc iteration limit.  The default is 100.
TEXT: H ITL2=x         resets the dc transfer curve iteration limit.  The
TEXT: H                default is 50.
TEXT: H ITL3=x         resets the lower transient analysis iteration limit.
TEXT: H                the default value is 4.  (Note: not implemented in Spice3).
TEXT: H ITL4=x         resets the transient analysis timepoint iteration limit.
TEXT: H                the default is 10.
TEXT: H ITL5=x         resets the transient analysis total iteration limit.
TEXT: H                the default is 5000.  Set ITL5=0 to omit this test.
TEXT: H                (Note: not implemented in Spice3).
TEXT: H KEEPOPINFO     Retain the operating point information when either an
TEXT: H                AC, Distortion, or Pole-Zero analysis is run.
TEXT: H                This is particularly useful if the circuit is large
TEXT: H                and you do not want to run a (redundant) ".OP" analysis.
TEXT: H METHOD=name    sets the numerical integration method used by SPICE.
TEXT: H                Possible names are "Gear" or "trapezoidal" (or just "trap").
TEXT: H                The default is trapezoidal.
TEXT: H PIVREL=x       resets the relative ratio between the largest column entry
TEXT: H                and an acceptable pivot value. The default value is 1.0e-3.
TEXT: H                In the numerical pivoting algorithm the allowed minimum
TEXT: H                pivot value is determined by
TEXT: H                EPSREL=AMAX1(PIVREL*MAXVAL, PIVTOL)
TEXT: H                where MAXVAL is the maximum element in the column where
TEXT: H                a pivot is sought (partial pivoting).
TEXT: H PIVTOL=x       resets the absolute minimum value for a matrix entry
TEXT: H                to be accepted as a pivot.  The default value is 1.0e-13.
TEXT: H RELTOL=x       resets the relative error tolerance of the program.
TEXT: H                The
TEXT: H                default value is 0.001 (0.1%).
TEXT: H TEMP=x         Resets the operating temperature of the circuit.  The
TEXT: H                default value is 27 deg C (300 deg K).  TEMP can be overridden
TEXT: H                by a temperature specification on any temperature dependent
TEXT: H                instance.
TEXT: H TNOM=x         resets the nominal temperature at which device parameters
TEXT: H                are measured.  The default value is 27 deg C (300 deg K).
TEXT: H                TNOM can be overridden by a specification on any temperature
TEXT: H                dependent device model.
TEXT: H TRTOL=x        resets the transient error tolerance.  The default value
TEXT: H                is 7.0.  This parameter is an estimate of the factor by
TEXT: H                which SPICE overestimates the actual truncation error.
TEXT: H TRYTOCOMPACT   Applicable only to the LTRA model.
TEXT: H                When specified, the simulator tries to condense LTRA transmission
TEXT: H                lines' past history of input voltages and currents.
TEXT: H VNTOL=x        resets the absolute voltage error tolerance of the
TEXT: H                program.  The default value is 1 microvolt.
TEXT: H
TEXT: H
TEXT: H      In addition, the  following  options  have  the  listed
TEXT: H effect when operating in spice2 emulation mode:
TEXT: H
TEXT: H option   effect
TEXT: H
TEXT: H option   effect
TEXT: H ACCT     causes accounting and run time statistics to be printed
TEXT: H LIST     causes the summary listing of the input data to be printed
TEXT: H NOMOD    suppresses the printout of the model parameters
TEXT: H NOPAGE   suppresses page ejects
TEXT: H NODE     causes the printing of the node table.
TEXT: H OPTS     causes the option values to be printed.
TEXT: H
TEXT: H

SUBJECT: INITIAL CONDITIONS
TITLE: INITIAL CONDITIONS
TEXT: H
TEXT: H 4.2.  INITIAL CONDITIONS
TEXT: H
SUBTOPIC: SPICE:.NODESET
SUBTOPIC: SPICE:.IC

SUBJECT: .NODESET
TITLE: .NODESET:  Specify Initial Node Voltage Guesses
TEXT: H
TEXT: H 4.2.1.  .NODESET:  Specify Initial Node Voltage Guesses
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     .NODESET V(NODNUM)=VAL V(NODNUM)=VAL ...
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     .NODESET V(12)=4.5 V(4)=2.23
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The Nodeset line helps the program find the dc or  ini-
TEXT: H tial  transient  solution  by making a preliminary pass with
TEXT: H the specified nodes held to the given  voltages.   The  res-
TEXT: H triction is then released and the iteration continues to the
TEXT: H true solution.  The .NODESET line may be necessary for  con-
TEXT: H vergence on bistable or a-stable circuits.  In general, this
TEXT: H line should not be necessary.
TEXT: H
TEXT: H

SUBJECT: .IC
TITLE: .IC:  Set Initial Conditions
TEXT: H
TEXT: H 4.2.2.  .IC:  Set Initial Conditions
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     .IC V(NODNUM)=VAL V(NODNUM)=VAL ...
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     .IC V(11)=5 V(4)=-5 V(2)=2.2
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The IC line is for  setting  transient  initial  condi-
TEXT: H tions.   It  has two different interpretations, depending on
TEXT: H whether the UIC parameter is specified on the .TRAN  control
TEXT: H line.   Also,  one  should  not  confuse  this line with the
TEXT: H .NODESET line.  The .NODESET line is only to help dc conver-
TEXT: H gence,  and  does not affect final bias solution (except for
TEXT: H multi-stable circuits).  The  two  interpretations  of  this
TEXT: H line are as follows:
TEXT: H
TEXT: H  1.  When the UIC parameter is specified on the .TRAN  line,
TEXT: H then the node voltages specified on the .IC control line are
TEXT: H used to compute the capacitor, diode, BJT, JFET, and  MOSFET
TEXT: H initial  conditions.   This  is equivalent to specifying the
TEXT: H IC=... parameter on each device line, but is much more  con-
TEXT: H venient.   The  IC=...  parameter can still be specified and
TEXT: H takes precedence over the .IC  values.   Since  no  dc  bias
TEXT: H (initial  transient)  solution  is computed before the tran-
TEXT: H sient analysis, one should  take  care  to  specify  all  dc
TEXT: H source  voltages  on  the .IC control line if they are to be
TEXT: H used to compute device initial conditions.
TEXT: H
TEXT: H  2.  When the UIC parameter is not specified  on  the  .TRAN
TEXT: H control  line,  the  dc bias (initial transient) solution is
TEXT: H computed before the transient analysis.  In this  case,  the
TEXT: H node voltages specified on the .IC control line is forced to
TEXT: H the desired initial values during the bias solution.  During
TEXT: H transient analysis, the constraint on these node voltages is
TEXT: H removed.  This is the preferred method since it allows SPICE
TEXT: H to compute a consistent dc solution.
TEXT: H

SUBJECT: ANALYSES
TITLE: ANALYSES
TEXT: H
TEXT: H 4.3.  ANALYSES
TEXT: H
TEXT: H
SUBTOPIC: SPICE:.AC
SUBTOPIC: SPICE:.DC
SUBTOPIC: SPICE:.DISTO
SUBTOPIC: SPICE:.NOISE
SUBTOPIC: SPICE:.OP
SUBTOPIC: SPICE:.PZ
SUBTOPIC: SPICE:.SENS
SUBTOPIC: SPICE:.TF
SUBTOPIC: SPICE:.TRAN

SUBJECT: .AC
TITLE: .AC:  Small-Signal AC Analysis
TEXT: H
TEXT: H 4.3.1.  .AC:  Small-Signal AC Analysis
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     .AC DEC ND FSTART FSTOP
TEXT: H     .AC OCT NO FSTART FSTOP
TEXT: H     .AC LIN NP FSTART FSTOP
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     .AC DEC 10 1 10K
TEXT: H     .AC DEC 10 1K 100MEG
TEXT: H     .AC LIN 100 1 100HZ
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H      DEC stands for decade variation, and ND is  the  number
TEXT: H of  points per decade.  OCT stands for octave variation, and
TEXT: H NO is the number of  points  per  octave.   LIN  stands  for
TEXT: H linear variation, and NP is the number of points.  FSTART is
TEXT: H the starting frequency, and FSTOP is  the  final  frequency.
TEXT: H If  this  line is included in the input file, SPICE performs
TEXT: H an AC analysis of the circuit over the  specified  frequency
TEXT: H range.   Note that in order for this analysis to be meaning-
TEXT: H ful, at least one independent source must have  been  speci-
TEXT: H fied with an ac value.
TEXT: H
TEXT: H

SUBJECT: .DC
TITLE: .DC:  DC Transfer Function
TEXT: H
TEXT: H 4.3.2.  .DC:  DC Transfer Function
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     .DC SRCNAM VSTART VSTOP VINCR [SRC2 START2 STOP2 INCR2]
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     .DC VIN 0.25 5.0 0.25
TEXT: H     .DC VDS 0 10 .5 VGS 0 5 1
TEXT: H     .DC VCE 0 10 .25 IB 0 10U 1U
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The DC line defines the dc transfer  curve  source  and
TEXT: H sweep  limits  (again  with  capacitors  open  and inductors
TEXT: H shorted).  SRCNAM is the name of an independent  voltage  or
TEXT: H current  source.  VSTART, VSTOP, and VINCR are the starting,
TEXT: H final, and  incrementing  values  respectively.   The  first
TEXT: H example  causes  the  value  of the voltage source VIN to be
TEXT: H swept from 0.25 Volts to 5.0 Volts  in  increments  of  0.25
TEXT: H Volts.   A  second source (SRC2) may optionally be specified
TEXT: H with associated sweep parameters.  In this case,  the  first
TEXT: H source  is swept over its range for each value of the second
TEXT: H source.  This option can be useful for obtaining semiconduc-
TEXT: H tor  device  output characteristics.  See the second example
TEXT: H circuit description in Appendix A.
TEXT: H
TEXT: H

SUBJECT: .DISTO
TITLE: .DISTO:  Distortion Analysis
TEXT: H
TEXT: H 4.3.3.  .DISTO:  Distortion Analysis
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     .DISTO DEC ND FSTART FSTOP <F2OVERF1>
TEXT: H     .DISTO OCT NO FSTART FSTOP <F2OVERF1>
TEXT: H     .DISTO LIN NP FSTART FSTOP <F2OVERF1>
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     .DISTO DEC 10 1kHz 100Mhz
TEXT: H     .DISTO DEC 10 1kHz 100Mhz 0.9
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The Disto line does a small-signal distortion  analysis
TEXT: H of   the   circuit.   A  multi-dimensional  Volterra  series
TEXT: H analysis is done using multi-dimensional  Taylor  series  to
TEXT: H represent  the nonlinearities at the operating point.  Terms
TEXT: H of up to third order are used in the series expansions.
TEXT: H
TEXT: H      If the optional parameter F2OVERF1  is  not  specified,
TEXT: H .DISTO  does a harmonic analysis - i.e., it analyses distor-
TEXT: H tion in the circuit using only a single input frequency  F1,
TEXT: H which  is swept as specified by arguments of the .DISTO com-
TEXT: H mand exactly as in the .AC command.   Inputs  at  this  fre-
TEXT: H quency  may  be  present  at more than one input source, and
TEXT: H their magnitudes and phases are specified by  the  arguments
TEXT: H of the DISTOF1 keyword in the input file lines for the input
TEXT: H sources (see the description for independent sources).  (The
TEXT: H arguments  of  the  DISTOF2 keyword are not relevant in this
TEXT: H case).  The analysis produces  information  about  the  A.C.
TEXT: H values  of all node voltages and branch currents at the har-
TEXT: H monic frequencies 2F1 and 3F1, vs. the input frequency F1 as
TEXT: H it is swept.  (A value of 1 (as a complex distortion output)
TEXT: H signifies cos(2J(2F1)t) at 2F1  and  cos(2J(3F1)t)  at  3F1,
TEXT: H using  the  convention  that 1 at the input fundamental fre-
TEXT: H quency is equivalent to  cos(2JF1t).)  The  distortion  com-
TEXT: H ponent  desired  (2F1 or 3F1) can be selected using commands
TEXT: H in nutmeg, and then printed or plotted.  (Normally,  one  is
TEXT: H interested  primarily  in the magnitude of the harmonic com-
TEXT: H ponents, so the magnitude of  the  AC  distortion  value  is
TEXT: H looked  at).   It  should  be  noted that these are the A.C.
TEXT: H values of the actual harmonic components, and are not  equal
TEXT: H to  HD2  and HD3.  To obtain HD2 and HD3, one must divide by
TEXT: H the corresponding A.C. values at F1, obtained  from  an  .AC
TEXT: H line.  This division can be done using nutmeg commands.
TEXT: H
TEXT: H      If the optional F2OVERF1  parameter  is  specified,  it
TEXT: H should  be  a real number between (and not equal to) 0.0 and
TEXT: H 1.0; in this case, .DISTO does a spectral analysis.  It con-
TEXT: H siders  the  circuit with sinusoidal inputs at two different
TEXT: H frequencies F1 and F2.  F1 is swept according to the  .DISTO
TEXT: H control line options exactly as in the .AC control line.  F2
TEXT: H is kept fixed at a single frequency as F1 sweeps - the value
TEXT: H at which it is kept fixed is equal to F2OVERF1 times FSTART.
TEXT: H Each independent source in the circuit may potentially  have
TEXT: H two  (superimposed) sinusoidal inputs for distortion, at the
TEXT: H frequencies F1 and F2.  The magnitude and phase  of  the  F1
TEXT: H component are specified by the arguments of the DISTOF1 key-
TEXT: H word in the source's input  line  (see  the  description  of
TEXT: H independent sources); the magnitude and phase of the F2 com-
TEXT: H ponent are specified by the arguments of  the  DISTOF2  key-
TEXT: H word.    The   analysis   produces   plots   of   all   node
TEXT: H voltages/branch currents at the intermodulation product fre-
TEXT: H quencies  F1  +  F2,  F1 - F2, and (2 F1) - F2, vs the swept
TEXT: H frequency F1.  The IM product of interest  may  be  selected
TEXT: H using  the setplot command, and displayed with the print and
TEXT: H plot commands.  It  is  to  be  noted  as  in  the  harmonic
TEXT: H analysis  case,  the  results are the actual AC voltages and
TEXT: H currents at the intermodulation frequencies, and need to  be
TEXT: H normalized  with  respect  to  .AC  values  to obtain the IM
TEXT: H parameters.
TEXT: H
TEXT: H      If the DISTOF1 or DISTOF2 keywords are missing from the
TEXT: H description  of  an  independent source, then that source is
TEXT: H assumed to have no input  at  the  corresponding  frequency.
TEXT: H The  default  values  of the magnitude and phase are 1.0 and
TEXT: H 0.0 respectively.  The phase should be specified in degrees.
TEXT: H
TEXT: H      It should be carefully noted that the  number  F2OVERF1
TEXT: H should  ideally be an irrational number, and that since this
TEXT: H is not possible in practice, efforts should be made to  keep
TEXT: H the denominator in its fractional representation as large as
TEXT: H possible, certainly above 3, for accurate results (i.e.,  if
TEXT: H F2OVERF1 is represented as a fraction A/B, where A and B are
TEXT: H integers with no common factors, B should  be  as  large  as
TEXT: H possible; note that A < B because F2OVERF1 is constrained to
TEXT: H be < 1).   To  illustrate  why,  consider  the  cases  where
TEXT: H F2OVERF1  is  49/100  and  1/2.  In a spectral analysis, the
TEXT: H outputs produced are at F1 + F2, F1 - F2 and 2 F1 - F2.   In
TEXT: H the  latter  case,  F1 - F2 = F2, so the result at the F1-F2
TEXT: H component is erroneous because there is the strong fundamen-
TEXT: H tal  F2  component at the same frequency.  Also, F1 + F2 = 2
TEXT: H F1 - F2 in the latter case, and  each  result  is  erroneous
TEXT: H individually.   This  problem is not there in the case where
TEXT: H F2OVERF1 = 49/100, because F1-F2 = 51/100 F1 < > 49/100 F1 =
TEXT: H F2.   In  this  case, there are two very closely spaced fre-
TEXT: H quency components at F2 and F1 - F2.  One of the  advantages
TEXT: H of the Volterra series technique is that it computes distor-
TEXT: H tions at mix frequencies expressed symbolically (i.e. n F1 +
TEXT: H m F2), therefore one is able to obtain the strengths of dis-
TEXT: H tortion components accurately even if the separation between
TEXT: H them  is  very  small,  as opposed to transient analysis for
TEXT: H example.  The disadvantage is of course that if two  of  the
TEXT: H mix   frequencies  coincide,  the  results  are  not  merged
TEXT: H together and presented (though this could presumably be done
TEXT: H as  a  postprocessing step).  Currently, the interested user
TEXT: H should keep track of the mix frequencies himself or  herself
TEXT: H and  add  the  distortions  at  coinciding  mix  frequencies
TEXT: H together should it be necessary.
TEXT: H
TEXT: H

SUBJECT: .NOISE
TITLE: .NOISE:  Noise Analysis
TEXT: H
TEXT: H 4.3.4.  .NOISE:  Noise Analysis
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     .NOISE V(OUTPUT <,REF>) SRC ( DEC | LIN | OCT ) PTS FSTART FSTOP
TEXT: H     + <PTS_PER_SUMMARY>
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     .NOISE V(5) VIN DEC 10 1kHZ 100Mhz
TEXT: H     .NOISE V(5,3) V1 OCT 8 1.0 1.0e6 1
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The Noise line does a noise analysis  of  the  circuit.
TEXT: H OUTPUT  is  the  node  at  which  the  total output noise is
TEXT: H desired;  if  REF  is  specified,  then  the  noise  voltage
TEXT: H V(OUTPUT)  -  V(REF)  is  calculated.   By  default,  REF is
TEXT: H assumed to be ground.  SRC is the  name  of  an  independent
TEXT: H source  to  which  input noise is referred.  PTS, FSTART and
TEXT: H FSTOP are .AC type parameters  that  specify  the  frequency
TEXT: H range  over  which plots are desired.  PTS_PER_SUMMARY is an
TEXT: H optional integer; if specified, the noise  contributions  of
TEXT: H each  noise generator is produced every PTS_PER_SUMMARY fre-
TEXT: H quency points.
TEXT: H
TEXT: H      The .NOISE control line produces two plots  -  one  for
TEXT: H the  Noise  Spectral  Density  curves  and one for the total
TEXT: H Integrated Noise over the specified  frequency  range.   All
TEXT: H                                                     2
TEXT: H noise  voltages/currents  are  in  squared  units (V /Hz and
TEXT: H  2                           2      2
TEXT: H A /Hz for spectral density, V  and A  for integrated noise).
TEXT: H

SUBJECT: .OP
TITLE: .OP:  Operating Point Analysis
TEXT: H
TEXT: H 4.3.5.  .OP:  Operating Point Analysis
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     .OP
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The inclusion of this line in  an  input  file  directs
TEXT: H SPICE  to  determine  the  dc operating point of the circuit
TEXT: H with inductors shorted and capacitors opened.  Note:   a  DC
TEXT: H analysis  is  automatically  performed  prior to a transient
TEXT: H analysis to determine the transient initial conditions,  and
TEXT: H prior  to  an AC small-signal, Noise, and Pole-Zero analysis
TEXT: H to determine the linearized, small-signal  models  for  non-
TEXT: H linear devices (see the KEEPOPINFO variable above).
TEXT: H
TEXT: H

SUBJECT: .PZ
TITLE: .PZ:  Pole-Zero Analysis
TEXT: H
TEXT: H 4.3.6.  .PZ:  Pole-Zero Analysis
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     .PZ NODE1 NODE2 NODE3 NODE4 CUR POL
TEXT: H     .PZ NODE1 NODE2 NODE3 NODE4 CUR ZER
TEXT: H     .PZ NODE1 NODE2 NODE3 NODE4 CUR PZ
TEXT: H     .PZ NODE1 NODE2 NODE3 NODE4 VOL POL
TEXT: H     .PZ NODE1 NODE2 NODE3 NODE4 VOL ZER
TEXT: H     .PZ NODE1 NODE2 NODE3 NODE4 VOL PZ
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     .PZ 1 0 3 0 CUR POL
TEXT: H     .PZ 2 3 5 0 VOL ZER
TEXT: H     .PZ 4 1 4 1 CUR PZ
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H      CUR stands for a transfer function of the type  (output
TEXT: H voltage)/(input  current)  while  VOL  stands for a transfer
TEXT: H function of the type (output voltage)/(input voltage).   POL
TEXT: H stands  for  pole  analysis only, ZER for zero analysis only
TEXT: H and PZ for both.  This feature is provided mainly because if
TEXT: H there  is  a nonconvergence in finding poles or zeros, then,
TEXT: H at least the other can be found.  Finally, NODE1  and  NODE2
TEXT: H are the two input nodes and NODE3 and NODE4 are the two out-
TEXT: H put nodes.  Thus, there is complete  freedom  regarding  the
TEXT: H output and input ports and the type of transfer function.
TEXT: H
TEXT: H      In interactive mode, the command  syntax  is  the  same
TEXT: H except  that the first field is PZ instead of .PZ.  To print
TEXT: H the results, one should use the command 'print all'.
TEXT: H
TEXT: H

SUBJECT: .SENS
TITLE: .SENS:  DC or Small-Signal AC Sensitivity Analysis
TEXT: H
TEXT: H 4.3.7.  .SENS:  DC or Small-Signal AC Sensitivity Analysis
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     .SENS OUTVAR
TEXT: H     .SENS OUTVAR AC DEC ND FSTART FSTOP
TEXT: H     .SENS OUTVAR AC OCT NO FSTART FSTOP
TEXT: H     .SENS OUTVAR AC LIN NP FSTART FSTOP
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     .SENS V(1,OUT)
TEXT: H     .SENS V(OUT) AC DEC 10 100 100k
TEXT: H     .SENS I(VTEST)
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The sensitivity of OUTVAR to all non-zero device param-
TEXT: H eters  is  calculated  when  the SENS analysis is specified.
TEXT: H OUTVAR is a circuit variable (node voltage or voltage-source
TEXT: H branch  current).   The first form calculates sensitivity of
TEXT: H the DC operating-point value of  OUTVAR.   The  second  form
TEXT: H calculates  sensitivity  of  the  AC  values of OUTVAR.  The
TEXT: H parameters listed for AC sensitivity are the same as  in  an
TEXT: H AC  analysis  (see  ".AC"  above).  The output values are in
TEXT: H dimensions of change in output per unit change of input  (as
TEXT: H opposed to percent change in output or per percent change of
TEXT: H input).
TEXT: H
TEXT: H

SUBJECT: .TF
TITLE: .TF:  Transfer Function Analysis
TEXT: H
TEXT: H 4.3.8.  .TF:  Transfer Function Analysis
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     .TF OUTVAR INSRC
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     .TF V(5, 3) VIN
TEXT: H     .TF I(VLOAD) VIN
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The TF line defines the small-signal output  and  input
TEXT: H for  the  dc  small-signal  analysis.   OUTVAR is the small-
TEXT: H signal output variable and INSRC is the  small-signal  input
TEXT: H source.   If  this  line  is included, SPICE computes the dc
TEXT: H small-signal value of the transfer function  (output/input),
TEXT: H input  resistance,  and  output  resistance.   For the first
TEXT: H example, SPICE would compute the ratio of V(5,  3)  to  VIN,
TEXT: H the  small-signal  input  resistance  at VIN, and the small-
TEXT: H signal output resistance measured across nodes 5 and 3.
TEXT: H
TEXT: H

SUBJECT: .TRAN
TITLE: .TRAN:  Transient Analysis
TEXT: H
TEXT: H 4.3.9.  .TRAN:  Transient Analysis
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     .TRAN TSTEP TSTOP <TSTART <TMAX>>
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     .TRAN 1NS 100NS
TEXT: H     .TRAN 1NS 1000NS 500NS
TEXT: H     .TRAN 10NS 1US
TEXT: H
TEXT: H
TEXT: H
TEXT: H      TSTEP is the printing or plotting increment  for  line-
TEXT: H printer  output.   For use with the post-processor, TSTEP is
TEXT: H the suggested computing increment.  TSTOP is the final time,
TEXT: H and TSTART is the initial time.  If TSTART is omitted, it is
TEXT: H assumed to be zero.  The transient analysis always begins at
TEXT: H time  zero.   In the interval <zero, TSTART>, the circuit is
TEXT: H analyzed (to reach a  steady  state),  but  no  outputs  are
TEXT: H stored.   In  the  interval  <TSTART, TSTOP>, the circuit is
TEXT: H analyzed and outputs are stored.  TMAX is the maximum  step-
TEXT: H size  that  SPICE  uses;  for  default,  the program chooses
TEXT: H either TSTEP or (TSTOP-TSTART)/50.0, whichever  is  smaller.
TEXT: H TMAX  is  useful  when  one  wishes to guarantee a computing
TEXT: H interval which is smaller than the printer increment, TSTEP.
TEXT: H
TEXT: H      UIC (use initial conditions)  is  an  optional  keyword
TEXT: H which  indicates  that the user does not want SPICE to solve
TEXT: H for the quiescent operating point before beginning the tran-
TEXT: H sient  analysis.   If  this keyword is specified, SPICE uses
TEXT: H the values specified using IC=... on the various elements as
TEXT: H the  initial  transient  condition  and  proceeds  with  the
TEXT: H analysis.  If the .IC control line has been specified,  then
TEXT: H the  node  voltages  on the .IC line are used to compute the
TEXT: H initial conditions for the devices.  Look at the description
TEXT: H on  the  .IC control line for its interpretation when UIC is
TEXT: H not specified.
TEXT: H

SUBJECT: BATCH OUTPUT
TITLE: BATCH OUTPUT
TEXT: H
TEXT: H 4.4.  BATCH OUTPUT
TEXT: H
TEXT: H
SUBTOPIC: SPICE:.SAVE Lines
SUBTOPIC: SPICE:.PRINT Lines
SUBTOPIC: SPICE:.PLOT Lines
SUBTOPIC: SPICE:.FOUR

SUBJECT: .SAVE Lines
TITLE: .SAVE Lines
TEXT: H
TEXT: H 4.4.1.  .SAVE Lines
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     .SAVE vector vector vector ...
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     .SAVE i(vin) input output
TEXT: H     .SAVE @m1[id]
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The vectors listed on the .SAVE line  are  recorded  in
TEXT: H the  rawfile  for use later with spice3 or nutmeg (nutmeg is
TEXT: H just the data-analysis half of spice3, without  the  ability
TEXT: H to  simulate).   The standard vector names are accepted.  If
TEXT: H no .SAVE line is given, then the default set of vectors  are
TEXT: H saved  (node  voltages  and voltage source branch currents).
TEXT: H If .SAVE lines are given, only those vectors  specified  are
TEXT: H saved.   For  more  discussion  on internal device data, see
TEXT: H Appendix B.  See also the section on the interactive command
TEXT: H interpretor for information on how to use the rawfile.
TEXT: H

SUBJECT: .PRINT Lines
TITLE: .PRINT Lines
TEXT: H
TEXT: H 4.4.2.  .PRINT Lines
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     .PRINT PRTYPE OV1 <OV2 ... OV8>
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     .PRINT TRAN V(4) I(VIN)
TEXT: H     .PRINT DC V(2) I(VSRC) V(23, 17)
TEXT: H     .PRINT AC VM(4, 2) VR(7) VP(8, 3)
TEXT: H
TEXT: H
TEXT: H      The Print line defines the contents of a tabular  list-
TEXT: H ing of one to eight output variables.  PRTYPE is the type of
TEXT: H the analysis (DC, AC, TRAN, NOISE, or DISTO) for  which  the
TEXT: H specified  outputs  are  desired.   The  form for voltage or
TEXT: H current output variables is the same as given in the  previ-
TEXT: H ous section for the print command; Spice2 restricts the out-
TEXT: H put variable to the following forms (though this restriction
TEXT: H is not enforced by Spice3):
TEXT: H
TEXT: H
TEXT: H V(N1<,N2>)
TEXT: H           specifies the voltage difference between nodes  N1
TEXT: H           and  N2.  If N2 (and the preceding comma) is omit-
TEXT: H           ted, ground (0) is assumed.  See the print command
TEXT: H           in  the  previous  section  for more details.  For
TEXT: H           compatibility  with  spice2,  the  following  five
TEXT: H           additional  values  can  be  accessed  for  the ac
TEXT: H           analysis by replacing the "V" in V(N1,N2) with:
TEXT: H
TEXT: H
TEXT: H                    VR    -    real part
TEXT: H                    VI    -    imaginary part
TEXT: H                    VM    -    magnitude
TEXT: H                    VP    -    phase
TEXT: H                    VDB   -    20  log10(magnitude)
TEXT: H
TEXT: H
TEXT: H
TEXT: H I(VXXXXXXX)
TEXT: H           specifies the current flowing in  the  independent
TEXT: H           voltage  source  named VXXXXXXX.  Positive current
TEXT: H           flows from the positive node, through the  source,
TEXT: H           to  the  negative  node.  For the ac analysis, the
TEXT: H           corresponding replacements for the letter I may be
TEXT: H           made in the same way as described for voltage out-
TEXT: H           puts.
TEXT: H
TEXT: H
TEXT: H      Output variables for the noise and distortion  analyses
TEXT: H have  a  different  general form from that of the other ana-
TEXT: H lyses.
TEXT: H
TEXT: H      There is no limit on the number  of  .PRINT  lines  for
TEXT: H each type of analysis.
TEXT: H
TEXT: H

SUBJECT: .PLOT Lines
TITLE: .PLOT Lines
TEXT: H
TEXT: H 4.4.3.  .PLOT Lines
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     .PLOT PLTYPE OV1 <(PLO1, PHI1)> <OV2 <(PLO2, PHI2)> ... OV8>
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     .PLOT DC V(4) V(5) V(1)
TEXT: H     .PLOT TRAN V(17, 5) (2, 5) I(VIN) V(17) (1, 9)
TEXT: H     .PLOT AC VM(5) VM(31, 24) VDB(5) VP(5)
TEXT: H     .PLOT DISTO HD2 HD3(R) SIM2
TEXT: H     .PLOT TRAN V(5, 3) V(4) (0, 5) V(7) (0, 10)
TEXT: H
TEXT: H
TEXT: H      The Plot line defines the contents of one  plot  of
TEXT: H from  one to eight output variables.  PLTYPE is the type
TEXT: H of analysis (DC, AC, TRAN, NOISE, or  DISTO)  for  which
TEXT: H the  specified  outputs are desired.  The syntax for the
TEXT: H OVI is identical to that for the .PRINT line and for the
TEXT: H plot command in the interactive mode.
TEXT: H
TEXT: H
TEXT: H      The overlap of two or more traces on any plot is  indi-
TEXT: H cated by the letter X.
TEXT: H
TEXT: H      When more than one output variable appears on the  same
TEXT: H plot,  the  first  variable  specified is printed as well as
TEXT: H plotted.  If a printout of all variables is desired, then  a
TEXT: H companion .PRINT line should be included.
TEXT: H
TEXT: H      There is no limit on the number of .PLOT  lines  speci-
TEXT: H fied for each type of analysis.
TEXT: H
TEXT: H

SUBJECT: .FOUR
TITLE: .FOUR:  Fourier Analysis of Transient Analysis Output
TEXT: H
TEXT: H 4.4.4.  .FOUR:  Fourier Analysis of Transient Analysis  Out-
TEXT: H put
TEXT: H
TEXT: H General form:
TEXT: H
TEXT: H     .FOUR FREQ OV1 <OV2 OV3 ...>
TEXT: H
TEXT: H
TEXT: H Examples:
TEXT: H
TEXT: H     .FOUR 100K  V(5)
TEXT: H
TEXT: H
TEXT: H      The Four (or Fourier) line controls  whether  SPICE
TEXT: H performs  a  Fourier analysis as a part of the transient
TEXT: H analysis.  FREQ is the fundamental frequency,  and  OV1,
TEXT: H desired.  The Fourier analysis is performed over the in-
TEXT: H terval  <TSTOP-period,  TSTOP>, where TSTOP is the final
TEXT: H time specified for the transient analysis, and period is
TEXT: H one  period  of  the fundamental frequency.  The dc com-
TEXT: H ponent and the first nine harmonics are determined.  For
TEXT: H maximum  accuracy,  TMAX  (see the .TRAN line) should be
TEXT: H set to period/100.0 (or less for very high-Q circuits).
TEXT: H

SUBJECT: INTERACTIVE INTERPRETER
TITLE: INTERACTIVE INTERPRETER
TEXT: H
TEXT: H 5.  INTERACTIVE INTERPRETER
TEXT: H
TEXT: H      Spice3 consists of a simulator and a front-end for data
TEXT: H analysis  and  plotting.   The  front-end  may  be  run as a
TEXT: H separate "stand-alone" program under the name Nutmeg.
TEXT: H
TEXT: H      Nutmeg will read in the "raw" data output file  created
TEXT: H by  spice  -r  or  with  the write command in an interactive
TEXT: H Spice3 session.  Nutmeg or interactive Spice3 can plot  data
TEXT: H from  a  simulation  on a graphics terminal or a workstation
TEXT: H display.  Most of the commands available in the  interactive
TEXT: H Spice3 front end are available in nutmeg;  where this is not
TEXT: H the case, Spice-only  commands  have  been  marked  with  an
TEXT: H asterisk  ("*").  Note that the raw output file is different
TEXT: H from the data that Spice2 writes  to  the  standard  output,
TEXT: H which  may  also be produced by spice3 with the "-b" command
TEXT: H line option.
TEXT: H
TEXT: H      Spice and Nutmeg use the X Window System  for  plotting
TEXT: H if they find the environment variable DISPLAY.  Otherwise, a
TEXT: H graphics-terminal independent interface (MFB) is  used.   If
TEXT: H you  are  using  X  on  a  workstation, the DISPLAY variable
TEXT: H should already be set; if you want to display graphics on  a
TEXT: H system different from the one you are running Spice3 or Nut-
TEXT: H meg on, DISPLAY should be of the  form  "machine:0.0".   See
TEXT: H the appropriate documentation on the X Window Sytem for more
TEXT: H details.
TEXT: H
TEXT: H
TEXT: H Command Synopsis
TEXT: H
TEXT: H     spice [ -n ] [ -t term ] [ -r rawfile] [ -b ] [ -i ] [ input file ... ]
TEXT: H
TEXT: H     nutmeg [ - ] [ -n ] [ -t term ] [ datafile ... ]
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H Options are:
TEXT: H
TEXT: H -    Don't   try   to   load   the   default    data    file
TEXT: H      ("rawspice.raw")  if  no other files are given.  Nutmeg
TEXT: H      only.
TEXT: H
TEXT: H -n (or -N)
TEXT: H      Don't try to source the file ".spiceinit" upon startup.
TEXT: H      Normally  spice  and nutmeg try to find the file in the
TEXT: H      current directory, and if it is not found then  in  the
TEXT: H      user's home directory.
TEXT: H
TEXT: H -t term (or -T term)
TEXT: H      The program is being run on a terminal  with  mfb  name
TEXT: H      term.
TEXT: H
TEXT: H -b (or -B)
TEXT: H      Run in batch mode.   Spice3  reads  the  default  input
TEXT: H      source  (e.g.  keyboard)  or reads the given input file
TEXT: H      and performs the analyses specified; output  is  either
TEXT: H      Spice2-like  line-printer  plots  ("ascii  plots") or a
TEXT: H      spice rawfile.  See the following section for  details.
TEXT: H      Note  that  if the input source is not a terminal (e.g.
TEXT: H      using the IO redirection notation of  "<")  Spice3  de-
TEXT: H      faults  to  batch  mode (-i overrides).  This option is
TEXT: H      valid for Spice3 only.
TEXT: H
TEXT: H
TEXT: H
TEXT: H -s (or -S)
TEXT: H      Run in server mode.  This is like  batch  mode,  except
TEXT: H      that  a  temporary  rawfile is used and then written to
TEXT: H      the standard output, preceded by a line with  a  single
TEXT: H      "@",  after  the simulation is done.  This mode is used
TEXT: H      by the spice daemon.  This option is valid  for  Spice3
TEXT: H      only.
TEXT: H
TEXT: H
TEXT: H
TEXT: H -i (or -I)
TEXT: H      Run in interactive mode.  This is useful if  the  stan-
TEXT: H      dard  input  is  not a terminal but interactive mode is
TEXT: H      desired.  Command completion is  not  available  unless
TEXT: H      the standard input is a terminal, however.  This option
TEXT: H      is valid for Spice3 only.
TEXT: H
TEXT: H
TEXT: H
TEXT: H -r rawfile (or -P rawfile)
TEXT: H      Use rawfile as the default file into which the  results
TEXT: H      of  the simulation are saved.  This option is valid for
TEXT: H      Spice3 only.
TEXT: H
TEXT: H
TEXT: H      Further arguments to spice are taken to be Spice3 input
TEXT: H files,  which  are  read and saved (if running in batch mode
TEXT: H then they are run immediately).  Spice3 accepts most  Spice2
TEXT: H input  file,  and  output ascii plots, fourier analyses, and
TEXT: H node printouts as specified  in  .plot,  .four,  and  .print
TEXT: H cards.   If  an out parameter is given on a .width card, the
TEXT: H effect is the same as set width = ....  Since  Spice3  ascii
TEXT: H plots  do  not  use  multiple  ranges,  however,  if vectors
TEXT: H together on a .plot card have different ranges they are  not
TEXT: H provide  as  much  information as they would in Spice2.  The
TEXT: H output of Spice3 is also much less verbose than  Spice2,  in
TEXT: H that  the  only  data printed is that requested by the above
TEXT: H cards.
TEXT: H
TEXT: H      For nutmeg, further arguments  are  taken  to  be  data
TEXT: H files  in binary or ascii format (see sconvert(1)) which are
TEXT: H loaded into nutmeg.  If the file is in binary format, it may
TEXT: H be  only  partially  completed  (useful for examining Spice2
TEXT: H output before the simulation is  finished).   One  file  may
TEXT: H contain any number of data sets from different analyses.
SUBTOPIC: SPICE:EXPRESSIONS FUNCTIONS AND CONSTANTS
SUBTOPIC: SPICE:COMMAND INTERPRETATION
SUBTOPIC: SPICE:COMMANDS
SUBTOPIC: SPICE:CONTROL STRUCTURES
SUBTOPIC: SPICE:VARIABLES
SUBTOPIC: SPICE:MISCELLANEOUS
SUBTOPIC: SPICE:BUGS

SUBJECT: EXPRESSIONS FUNCTIONS AND CONSTANTS
TITLE: EXPRESSIONS, FUNCTIONS, AND CONSTANTS
TEXT: H
TEXT: H 5.1.  EXPRESSIONS, FUNCTIONS, AND CONSTANTS
TEXT: H
TEXT: H      Spice and Nutmeg data is in the form of vectors:  time,
TEXT: H voltage,  etc.   Each  vector has a type, and vectors can be
TEXT: H operated on and combined algebraicly in ways consistent with
TEXT: H their  types.  Vectors are normally created when a data file
TEXT: H is read in (see the load command below), and when  the  ini-
TEXT: H tial  datafile is loaded.  They can also be created with the
TEXT: H let command.
TEXT: H
TEXT: H
TEXT: H      An expression is an algebraic formula involving vectors
TEXT: H and  scalars (a scalar is a vector of length 1) and the fol-
TEXT: H lowing operations:
TEXT: H
TEXT: H                   +   -    *    /    ^   %
TEXT: H
TEXT: H
TEXT: H % is the modulo operator, and the  comma  operator  has  two
TEXT: H meanings:  if  it is present in the argument list of a user-
TEXT: H definable function, it serves  to  separate  the  arguments.
TEXT: H Otherwise, the term x , y is synonymous with x + j(y).
TEXT: H
TEXT: H
TEXT: H
TEXT: H      Also available are the logical operations  &  (and),  |
TEXT: H (or),  !  (not), and the relational operations <, >, >=, <=,
TEXT: H =, and <> (not equal).  If used in an  algebraic  expression
TEXT: H they  work like they would in C, producing values of 0 or 1.
TEXT: H The relational operators have the following synonyms:
TEXT: H
TEXT: H
TEXT: H                             gt    >
TEXT: H                             lt    <
TEXT: H                             ge    >=
TEXT: H                             le    <=
TEXT: H                             ne    <>
TEXT: H                             eq    =
TEXT: H                             and   &
TEXT: H                             or    |
TEXT: H                             not   !
TEXT: H
TEXT: H
TEXT: H These are useful when < and >  might  be  confused  with  IO
TEXT: H redirection (which is almost always).
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The following functions are available:
TEXT: H
TEXT: H mag(vector)                The magnitude of vector
TEXT: H ph(vector)                 The phase of vector
TEXT: H j(vector)                  i (sqrt(-1)) times vector
TEXT: H real(vector)               The real component of vector
TEXT: H imag(vector)               The imaginary part of vector
TEXT: H db(vector)                 20 log10(mag(vector))
TEXT: H log(vector)                The logarithm (base 10) of vector
TEXT: H ln(vector)                 The natural logarithm (base e) of vector
TEXT: H exp(vector)                e to the vector power
TEXT: H abs(vector)                The absolute value of vector.
TEXT: H sqrt(vector)               The square root of vector.
TEXT: H sin(vector)                The sine of vector.
TEXT: H cos(vector)                The cosine of vector.
TEXT: H tan(vector)                The tangent of vector.
TEXT: H atan(vector)               The inverse tangent of vector.
TEXT: H norm(vector)               The vector normalized  to  1  (i.e,  the
TEXT: H                            largest  magnitude  of  any component is
TEXT: H                            1).
TEXT: H rnd(vector)                A vector with each  component  a  random
TEXT: H                            integer between 0 and the absolute value
TEXT: H                            of  the  vectors's  corresponding   com-
TEXT: H                            ponent.
TEXT: H mean(vector)               The result is a scalar (a length 1  vec-
TEXT: H                            tor) that is the mean of the elements of
TEXT: H                            vector.
TEXT: H vector(number)             The result is a vector of length number,
TEXT: H                            with  elements 0, 1, ... number - 1.  If
TEXT: H                            number is a vector then just  the  first
TEXT: H                            element is taken, and if it isn't an in-
TEXT: H                            teger then the floor of the magnitude is
TEXT: H                            used.
TEXT: H length(vector)             The length of vector.
TEXT: H interpolate(plot.vector)   The result of  interpolating  the  named
TEXT: H                            vector  onto  the  scale  of the current
TEXT: H                            plot.  This function uses  the  variable
TEXT: H                            polydegree  to  determine  the degree of
TEXT: H                            interpolation.
TEXT: H deriv(vector)              Calculates the derivative of  the  given
TEXT: H                            vector.   This uses numeric differentia-
TEXT: H                            tion by interpolating a  polynomial  and
TEXT: H                            may  not  produce  satisfactory  results
TEXT: H                            (particularly with iterated differentia-
TEXT: H                            tion).   The  implementation  only cacu-
TEXT: H                            lates the dirivative with respect to the
TEXT: H                            real componant of that vector's scale.
TEXT: H
TEXT: H
TEXT: H      A vector may be either the name  of  a  vector  already
TEXT: H defined or a floating-point number (a scalar).  A number may
TEXT: H be written in  any  format  acceptable  to  SPICE,  such  as
TEXT: H 14.6Meg  or  -1.231e-4.  Note that you can either use scien-
TEXT: H tific notation or one of the abbreviations like  MEG  or  G,
TEXT: H but  not  both.   As  with SPICE, a number may have trailing
TEXT: H alphabetic characters after it.
TEXT: H
TEXT: H      The notation expr [num] denotes the num'th  element  of
TEXT: H expr.   For  multi-dimensional vectors, a vector of one less
TEXT: H dimension is returned.  Also for multi-dimensional  vectors,
TEXT: H the  notation  expr[m][n] will return the nth element of the
TEXT: H mth subvector.  To get a subrange of a vector, use the  form
TEXT: H expr[lower, upper].
TEXT: H
TEXT: H      To reference vectors in a plot that is not the  current
TEXT: H plot   (see   the  setplot  command,  below),  the  notation
TEXT: H plotname.vecname can be used.
TEXT: H
TEXT: H
TEXT: H      Either a plotname or a vector name may be the  wildcard
TEXT: H all.   If  the  plotname  is  all, matching vectors from all
TEXT: H plots are specified, and if the vector name is all, all vec-
TEXT: H tors  in  the specified plots are referenced.  Note that you
TEXT: H may not use binary operations on expressions involving wild-
TEXT: H cards  - it is not obvious what all + all should denote, for
TEXT: H instance.  Thus some  (contrived)  examples  of  expressions
TEXT: H are:
TEXT: H
TEXT: H     cos(TIME) + db(v(3))
TEXT: H     sin(cos(log([1 2 3 4 5 6 7 8 9 10])))
TEXT: H     TIME * rnd(v(9)) - 15 * cos(vin#branch) ^ [7.9e5 8]
TEXT: H     not ((ac3.FREQ[32] & tran1.TIME[10]) gt 3)
TEXT: H
TEXT: H
TEXT: H
TEXT: H      Vector  names  in  spice  may  have  a  name  such   as
TEXT: H @name[param],  where  name  is  either  the name of a device
TEXT: H instance or model.  This denotes  the  value  of  the  param
TEXT: H parameter  of  the  device  or  model.   See  Appendix B for
TEXT: H details of what parameters are available.  The  value  is  a
TEXT: H vector  of  length  1.  This function is also available with
TEXT: H the show command, and is available with variables  for  con-
TEXT: H venience for command scripts.
TEXT: H
TEXT: H
TEXT: H      There are a number of pre-defined constants in  nutmeg.
TEXT: H They are:
TEXT: H
TEXT: H pi                J (3.14159...)
TEXT: H e                 The base of natural logarithms (2.71828...)
TEXT: H c                 The speed of light (299,792,500 m/sec)
TEXT: H i                 The square root of -1
TEXT: H                                                     o
TEXT: H kelvin            Absolute 0 in Centigrade (-273.15  C)
TEXT: H echarge           The charge on an electron (1.6021918e-19 C)
TEXT: H boltz             Boltzman's constant (1.3806226e-23)
TEXT: H planck            Planck's constant (h = 6.626200e-34)
TEXT: H
TEXT: H
TEXT: H      These are all in MKS units.  If you have another  vari-
TEXT: H able  with  a  name that conflicts with one of these then it
TEXT: H takes precedence.
TEXT: H

SUBJECT: COMMAND INTERPRETATION
TITLE: COMMAND INTERPRETATION
TEXT: H
TEXT: H 5.2.  COMMAND INTERPRETATION
TEXT: H
TEXT: H      If a word is typed  as  a  command,  and  there  is  no
TEXT: H built-in  command  with  that  name,  the directories in the
TEXT: H sourcepath list are searched in order for the file.   If  it
TEXT: H is  found,  it  is  read in as a command file (as if it were
TEXT: H sourced).  Before it is read, however,  the  variables  argc
TEXT: H and  argv  are  set  to  the  number  of words following the
TEXT: H filename on the command line, and  a  list  of  those  words
TEXT: H respectively.   After  the file is finished, these variables
TEXT: H are unset.  Note that if a command file  calls  another,  it
TEXT: H must  save  its argv and argc since they are altered.  Also,
TEXT: H command files may not be re-entrant since there are no local
TEXT: H variables.   (Of course, the procedures may explicitly mani-
TEXT: H pulate a stack...) This way one can write scripts  analogous
TEXT: H to shell scripts for nutmeg and Spice3.
TEXT: H
TEXT: H      Note that for the script to work with Spice3,  it  must
TEXT: H begin  with  a  blank  line  (or  whatever else, since it is
TEXT: H thrown away) and then a line with .control on it.   This  is
TEXT: H an  unfortunate  result of the source command being used for
TEXT: H both circuit input and command file  execution.   Note  also
TEXT: H that  this allows the user to merely type the name of a cir-
TEXT: H cuit file as a command and it  is  automatically  run.   The
TEXT: H commands  are executed immediately, without running any ana-
TEXT: H lyses that may be spicified in the circuit (to  execute  the
TEXT: H analyses before the script executes, include a "run" command
TEXT: H in the script).
TEXT: H
TEXT: H      There  are  various  command   scripts   installed   in
TEXT: H /usr/local/lib/spice/scripts  (or  whatever  the  path is on
TEXT: H your machine), and  the  default  sourcepath  includes  this
TEXT: H directory,  so you can use these command files (almost) like
TEXT: H builtin commands.

SUBJECT: COMMANDS
TITLE: COMMANDS
TEXT: H
TEXT: H 5.3.  COMMANDS
TEXT: H
TEXT: H
SUBTOPIC: SPICE:Ac
SUBTOPIC: SPICE:Alias
SUBTOPIC: SPICE:Alter
SUBTOPIC: SPICE:Asciiplot
SUBTOPIC: SPICE:Aspice
SUBTOPIC: SPICE:Bug
SUBTOPIC: SPICE:Cd
SUBTOPIC: SPICE:Destroy
SUBTOPIC: SPICE:Dc
SUBTOPIC: SPICE:Define
SUBTOPIC: SPICE:Delete
SUBTOPIC: SPICE:Diff
SUBTOPIC: SPICE:Display
SUBTOPIC: SPICE:Echo
SUBTOPIC: SPICE:Edit
SUBTOPIC: SPICE:Fourier
SUBTOPIC: SPICE:Hardcopy
SUBTOPIC: SPICE:Help
SUBTOPIC: SPICE:History
SUBTOPIC: SPICE:Iplot
SUBTOPIC: SPICE:Jobs
SUBTOPIC: SPICE:Let
SUBTOPIC: SPICE:Linearize
SUBTOPIC: SPICE:Listing
SUBTOPIC: SPICE:Load
SUBTOPIC: SPICE:Op
SUBTOPIC: SPICE:Plot
SUBTOPIC: SPICE:Print
SUBTOPIC: SPICE:Quit
SUBTOPIC: SPICE:Rehash
SUBTOPIC: SPICE:Reset
SUBTOPIC: SPICE:Reshape
SUBTOPIC: SPICE:Resume
SUBTOPIC: SPICE:Rspice
SUBTOPIC: SPICE:Run
SUBTOPIC: SPICE:Rusage
SUBTOPIC: SPICE:Save
SUBTOPIC: SPICE:Sens
SUBTOPIC: SPICE:Set
SUBTOPIC: SPICE:Setcirc
SUBTOPIC: SPICE:Setplot
SUBTOPIC: SPICE:Settype
SUBTOPIC: SPICE:Shell
SUBTOPIC: SPICE:Shift
SUBTOPIC: SPICE:Show
SUBTOPIC: SPICE:Showmod
SUBTOPIC: SPICE:Source
SUBTOPIC: SPICE:Status
SUBTOPIC: SPICE:Step
SUBTOPIC: SPICE:Stop
SUBTOPIC: SPICE:Tf
SUBTOPIC: SPICE:Trace
SUBTOPIC: SPICE:Tran
SUBTOPIC: SPICE:Transpose
SUBTOPIC: SPICE:Unalias
SUBTOPIC: SPICE:Undefine
SUBTOPIC: SPICE:Unset
SUBTOPIC: SPICE:Version
SUBTOPIC: SPICE:Where
SUBTOPIC: SPICE:Write
SUBTOPIC: SPICE:Xgraph

SUBJECT: Ac
TITLE: Ac*: Perform an AC, small-signal frequency response analysis
TEXT: H
TEXT: H 5.3.1.  Ac*: Perform an AC, small-signal frequency  response
TEXT: H analysis
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     ac ( DEC | OCT | LIN ) N Fstart Fstop
TEXT: H
TEXT: H
TEXT: H      Do an ac analysis.  See the  previous  sections  of
TEXT: H this manual for more details.
TEXT: H
TEXT: H

SUBJECT: Alias
TITLE: Alias:  Create an alias for a command
TEXT: H
TEXT: H 5.3.2.  Alias:  Create an alias for a command
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     alias [word] [text ...]
TEXT: H
TEXT: H
TEXT: H      Causes word to be aliased to text.  History substi-
TEXT: H tutions may be used, as in C-shell aliases.
TEXT: H
TEXT: H

SUBJECT: Alter
TITLE: Alter*:  Change a device or model parameter
TEXT: H
TEXT: H 5.3.3.  Alter*:  Change a device or model parameter
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     alter device value
TEXT: H     alter device parameter value [ parameter value ]
TEXT: H
TEXT: H
TEXT: H      Alter changes the value for a device or a specified
TEXT: H parameter  of a device or model.  The first form is used
TEXT: H by simple devices which have one principal value (resis-
TEXT: H tors,  capacitors,  etc.)  where  the second form is for
TEXT: H more complex devices (bjt's,  etc.).   Model  parameters
TEXT: H can be changed with the second form if the name contains
TEXT: H a "#".
TEXT: H
TEXT: H      For specifying vectors as values, start the  vector
TEXT: H with  "[", followed by the values in the vector, and end
TEXT: H with "]".  Be sure to place a space between each of  the
TEXT: H values and before and after the "[" and "]".
TEXT: H
TEXT: H

SUBJECT: Asciiplot
TITLE: Asciiplot:  Plot values using old-style character plots
TEXT: H
TEXT: H 5.3.4.  Asciiplot:  Plot values  using  old-style  character
TEXT: H plots
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     asciiplot plotargs
TEXT: H
TEXT: H
TEXT: H      Produce a line printer plot of  the  vectors.   The
TEXT: H plot  is  sent to the standard output, so you can put it
TEXT: H into a file with asciiplot args ... > file.  The set op-
TEXT: H tions width, height, and nobreak determine the width and
TEXT: H height of the plot, and whether there are  page  breaks,
TEXT: H respectively.   Note  that you will have problems if you
TEXT: H try to asciiplot something with an  X-scale  that  isn't
TEXT: H monotonic  (i.e, something like sin(TIME) ), because as-
TEXT: H ciiplot uses a simple-minded linear interpolation.
TEXT: H
TEXT: H

SUBJECT: Aspice
TITLE: Aspice: Asynchronous spice run
TEXT: H
TEXT: H 5.3.5.  Aspice: Asynchronous spice run
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     aspice input-file [output-file]
TEXT: H
TEXT: H
TEXT: H      Start a SPICE-3 run, and when it is  finished  load
TEXT: H the resulting data.  The raw data is kept in a temporary
TEXT: H file.  If output-file is specified then  the  diagnostic
TEXT: H output  is  directed  into  that  file,  otherwise it is
TEXT: H thrown away.
TEXT: H
TEXT: H

SUBJECT: Bug
TITLE: Bug:  Mail a bug report
TEXT: H
TEXT: H 5.3.6.  Bug:  Mail a bug report
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     bug
TEXT: H
TEXT: H
TEXT: H      Send a bug report.  Please include a short  summary
TEXT: H of  the  problem,  the  version  number  and name of the
TEXT: H operating system that you are running,  the  version  of
TEXT: H Spice that you are running, and the relevant spice input
TEXT: H file.   (If  you  have  defined  BUGADDR,  the  mail  is
TEXT: H delivered to there.)
TEXT: H
TEXT: H

SUBJECT: Cd
TITLE: Cd: Change directory
TEXT: H
TEXT: H 5.3.7.  Cd: Change directory
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     cd [directory]
TEXT: H
TEXT: H
TEXT: H      Change the current working directory to  directory,
TEXT: H or to the user's home directory if none is given.
TEXT: H
TEXT: H

SUBJECT: Destroy
TITLE: Destroy: Delete a data set
TEXT: H
TEXT: H 5.3.8.  Destroy: Delete a data set
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     destroy [plotnames | all]
TEXT: H
TEXT: H
TEXT: H      Release the memory holding the data for the  speci-
TEXT: H fied runs.
TEXT: H
TEXT: H

SUBJECT: Dc
TITLE: Dc*: Perform a DC-sweep analysis
TEXT: H
TEXT: H 5.3.9.  Dc*: Perform a DC-sweep analysis
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     dc Source-Name Vstart Vstop Vincr [ Source2 Vstart2 Vstop2 Vincr2 ]
TEXT: H
TEXT: H
TEXT: H      Do a dc transfer curve analysis.  See the  previous
TEXT: H sections of this manual for more details.
TEXT: H
TEXT: H

SUBJECT: Define
TITLE: Define:  Define a function
TEXT: H
TEXT: H 5.3.10.  Define:  Define a function
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     define function(arg1, arg2, ...) expression
TEXT: H
TEXT: H
TEXT: H      Define the user-definable function  with  the  name
TEXT: H function and arguments arg1, arg2, ... to be expression,
TEXT: H which may involve the arguments.  When the  function  is
TEXT: H later  used,  the  arguments it is given are substituted
TEXT: H for the formal arguments when it is parsed.  If  expres-
TEXT: H sion  is  not  present,  any  definition for function is
TEXT: H printed, and if there are no arguments  to  define  then
TEXT: H all currently active definitions are printed.  Note that
TEXT: H you may have different functions defined with  the  same
TEXT: H name but different arities.
TEXT: H
TEXT: H
TEXT: H
TEXT: H      Some useful definitions are:
TEXT: H
TEXT: H     define max(x,y) (x > y) * x + (x <= y) * y
TEXT: H     define min(x,y) (x < y) * x + (x >= y) * y
TEXT: H
TEXT: H
TEXT: H

SUBJECT: Delete
TITLE: Delete*: Remove a trace or breakpoint
TEXT: H
TEXT: H 5.3.11.  Delete*: Remove a trace or breakpoint
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     delete [ debug-number ... ]
TEXT: H
TEXT: H
TEXT: H      Delete the specified breakpoints and  traces.   The
TEXT: H debug numbers are those shown by the status command (un-
TEXT: H less you do status >  file,  in  which  case  the  debug
TEXT: H numbers are not printed).
TEXT: H
TEXT: H

SUBJECT: Diff
TITLE: Diff:  Compare vectors
TEXT: H
TEXT: H 5.3.12.  Diff:  Compare vectors
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     diff plot1 plot2 [vec ...]
TEXT: H
TEXT: H
TEXT: H      Compare all the vectors in the specified plots,  or
TEXT: H only the named vectors if any are given.  There are dif-
TEXT: H ferent vectors in the two plots, or any  values  in  the
TEXT: H vectors differ significantly the difference is reported.
TEXT: H The variable diff_abstol,  diff_reltol,  and  diff_vntol
TEXT: H are used to determine a significant difference.
TEXT: H
TEXT: H

SUBJECT: Display
TITLE: Display:  List known vectors and types
TEXT: H
TEXT: H 5.3.13.  Display:  List known vectors and types
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     display [varname ...]
TEXT: H
TEXT: H
TEXT: H      Prints a summary of currently defined  vectors,  or
TEXT: H of  the names specified.  The vectors are sorted by name
TEXT: H unless the variable  nosort  is  set.   The  information
TEXT: H given is the name of the vector, the length, the type of
TEXT: H the vector, and whether it is real or complex data.  Ad-
TEXT: H ditionally,  one vector is labeled [scale].  When a com-
TEXT: H mand such as plot is given without a vs  argument,  this
TEXT: H scale  is  used  for the X-axis.  It is always the first
TEXT: H vector in a rawfile, or the first vector  defined  in  a
TEXT: H new  plot.   If  you undefine the scale (i.e, let TIME =
TEXT: H []), one of the remaining vectors becomes the new  scale
TEXT: H (which is undetermined).
TEXT: H
TEXT: H

SUBJECT: Echo
TITLE: Echo:  Print text
TEXT: H
TEXT: H 5.3.14.  Echo:  Print text
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     echo [text...]
TEXT: H
TEXT: H
TEXT: H      Echos the given text to the screen.
TEXT: H
TEXT: H

SUBJECT: Edit
TITLE: Edit*: Edit the current circuit
TEXT: H
TEXT: H 5.3.15.  Edit*: Edit the current circuit
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     edit [ file ]
TEXT: H
TEXT: H
TEXT: H      Print the current Spice3 input file  into  a  file,
TEXT: H call  up  the  editor on that file and allow the user to
TEXT: H modify it, and then read it back in, replacing the  ori-
TEXT: H ginal file.  If a filename is given, then edit that file
TEXT: H and load it, making the circuit the current one.
TEXT: H
TEXT: H

SUBJECT: Fourier
TITLE: Fourier: Perform a fourier transform
TEXT: H
TEXT: H 5.3.16.  Fourier: Perform a fourier transform
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     fourier fundamental_frequency [value ...]
TEXT: H
TEXT: H
TEXT: H      Does a  fourier  analysis  of  each  of  the  given
TEXT: H values,  using the first 10 multiples of the fundamental
TEXT: H frequency (or the first nfreqs, if that variable is  set
TEXT: H -  see  below).   The  output  is like that of the .four
TEXT: H Spice3 line.  The values may be  any  valid  expression.
TEXT: H The values are interpolated onto a fixed-space grid with
TEXT: H the number of points given by the fourgridsize variable,
TEXT: H or 200 if it is not set.  The interpolation is of degree
TEXT: H polydegree if that variable is set, or 1.  If polydegree
TEXT: H is  0, then no interpolation is done.  This is likely to
TEXT: H give erroneous results if the time scale is not monoton-
TEXT: H ic, though.
TEXT: H
TEXT: H

SUBJECT: Hardcopy
TITLE: Hardcopy:  Save a plot to a file for printing
TEXT: H
TEXT: H 5.3.17.  Hardcopy:  Save a plot to a file for printing
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     hardcopy file plotargs
TEXT: H
TEXT: H
TEXT: H      Just like plot, except creates a file  called  file
TEXT: H containing  the  plot.   The file is an image in plot(5)
TEXT: H format, and can be printed by either the plot(1) program
TEXT: H or lpr with the -g flag.
TEXT: H
TEXT: H

SUBJECT: Help
TITLE: Help:  Print summaries of Spice3 commands
TEXT: H
TEXT: H 5.3.18.  Help:  Print summaries of Spice3 commands
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     help [all] [command ...]
TEXT: H
TEXT: H
TEXT: H      Prints help.  If the argument all is given, a short
TEXT: H description  of  everything  you  could possibly type is
TEXT: H printed.  If commands are given, descriptions  of  those
TEXT: H commands are printed.  Otherwise help for only a few ma-
TEXT: H jor commands is printed.
TEXT: H
TEXT: H

SUBJECT: History
TITLE: History:  Review previous commands
TEXT: H
TEXT: H 5.3.19.  History:  Review previous commands
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     history [number]
TEXT: H
TEXT: H
TEXT: H      Print out the history, or the last number  commands
TEXT: H typed  at the keyboard.  Note: in Spice3 version 3a7 and
TEXT: H earlier, all commands (including ones read  from  files)
TEXT: H were saved.
TEXT: H
TEXT: H

SUBJECT: Iplot
TITLE: Iplot*: Incremental plot
TEXT: H
TEXT: H 5.3.20.  Iplot*: Incremental plot
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     iplot [ node ...]
TEXT: H
TEXT: H
TEXT: H      Incrementally plot the values of  the  nodes  while
TEXT: H Spice3  runs.   The  iplot  command can be used with the
TEXT: H where command to find trouble spots in a transient simu-
TEXT: H lation.
TEXT: H
TEXT: H

SUBJECT: Jobs
TITLE: Jobs:  List active asynchronous spice runs
TEXT: H
TEXT: H 5.3.21.  Jobs:  List active asynchronous spice runs
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     jobs
TEXT: H
TEXT: H
TEXT: H      Report on the asynchronous SPICE-3  jobs  currently
TEXT: H running.   Nutmeg checks to see if the jobs are finished
TEXT: H every time you execute a command.  If it  is  done  then
TEXT: H the data is loaded and becomes available.
TEXT: H
TEXT: H

SUBJECT: Let
TITLE: Let:  Assign a value to a vector
TEXT: H
TEXT: H 5.3.22.  Let:  Assign a value to a vector
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     let name = expr
TEXT: H
TEXT: H
TEXT: H      Creates a new vector called  name  with  the  value
TEXT: H specified by expr, an expression as described above.  If
TEXT: H expr is [] (a zero-length vector) then  the  vector  be-
TEXT: H comes undefined.  Individual elements of a vector may be
TEXT: H modified by appending a subscript to name (ex. name[0]).
TEXT: H If there are no arguments, let is the same as display.
TEXT: H
TEXT: H

SUBJECT: Linearize
TITLE: Linearize*:  Interpolate to a linear scale
TEXT: H
TEXT: H 5.3.23.  Linearize*:  Interpolate to a linear scale
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     linearize vec ...
TEXT: H
TEXT: H
TEXT: H      Create a new plot with all of the  vectors  in  the
TEXT: H current  plot,  or only those mentioned if arguments are
TEXT: H given.  The new vectors are interpolated onto  a  linear
TEXT: H time  scale, which is determined by the values of tstep,
TEXT: H tstart, and tstop  in  the  currently  active  transient
TEXT: H analysis.   The currently loaded input file must include
TEXT: H a transient analysis (a tran command may be run interac-
TEXT: H tively  before  the  last  reset,  alternately), and the
TEXT: H current plot must be from this transient analysis.  This
TEXT: H command  is  needed  because  Spice3  doesn't output the
TEXT: H results from a transient analysis  in  the  same  manner
TEXT: H that Spice2 did.
TEXT: H
TEXT: H

SUBJECT: Listing
TITLE: Listing*: Print a listing of the current circuit
TEXT: H
TEXT: H 5.3.24.  Listing*: Print a listing of the current circuit
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     listing [logical] [physical] [deck] [expand]
TEXT: H
TEXT: H
TEXT: H      If the logical argument is given,  the  listing  is
TEXT: H with all continuation lines collapsed into one line, and
TEXT: H if the physical argument is given the lines are  printed
TEXT: H out as they were found in the file.  The default is log-
TEXT: H ical.  A deck listing is just like the physical listing,
TEXT: H except  without  the line numbers it recreates the input
TEXT: H file verbatim (except that it does not  preserve  case).
TEXT: H If  the  word  expand is present, the circuit is printed
TEXT: H with all subcircuits expanded.
TEXT: H
TEXT: H

SUBJECT: Load
TITLE: Load:  Load rawfile data
TEXT: H
TEXT: H 5.3.25.  Load:  Load rawfile data
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     load [filename] ...
TEXT: H
TEXT: H
TEXT: H      Loads either binary or ascii  format  rawfile  data
TEXT: H from   the   files   named.   The  default  filename  is
TEXT: H rawspice.raw, or the argument to the -r  flag  if  there
TEXT: H was one.
TEXT: H
TEXT: H

SUBJECT: Op
TITLE: Op*: Perform an operating point analysis
TEXT: H
TEXT: H 5.3.26.  Op*: Perform an operating point analysis
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     op
TEXT: H
TEXT: H
TEXT: H      Do an operating point analysis.  See  the  previous
TEXT: H sections of this manual for more details.
TEXT: H
TEXT: H

SUBJECT: Plot
TITLE: Plot: Plot values on the display
TEXT: H
TEXT: H 5.3.27.  Plot: Plot values on the display
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     plot exprs [ylimit ylo yhi] [xlimit xlo xhi] [xindices xilo xihi]
TEXT: H          [xcompress comp] [xdelta xdel] [ydelta ydel] [xlog] [ylog] [loglog]
TEXT: H          [vs xname] [xlabel word] [ylabel word] [title word] [samep]
TEXT: H          [linear]
TEXT: H
TEXT: H
TEXT: H
TEXT: H      Plot the given exprs on the screen (if  you  are  on  a
TEXT: H graphics  terminal).  The xlimit and ylimit arguments deter-
TEXT: H mine the high and low x- and y-limits of the  axes,  respec-
TEXT: H tively.   The  xindices  arguments  determine  what range of
TEXT: H points are to be plotted - everything  between  the  xilo'th
TEXT: H point and the xihi'th point is plotted.  The xcompress argu-
TEXT: H ment specifies that only one out of every comp points should
TEXT: H be  plotted.  If an xdelta or a ydelta parameter is present,
TEXT: H it specifies the spacing between grid lines on  the  X-  and
TEXT: H Y-axis.  These parameter names may be abbreviated to xl, yl,
TEXT: H xind, xcomp, xdel, and ydel respectively.
TEXT: H
TEXT: H      The xname argument is an expression to use as the scale
TEXT: H on  the  x-axis. If xlog or ylog are present then the X or Y
TEXT: H scale, respectively, is logarithmic (loglog is the  same  as
TEXT: H specifying both).  The xlabel and ylabel arguments cause the
TEXT: H specified labels to be used for the X and  Y  axes,  respec-
TEXT: H tively.
TEXT: H
TEXT: H      If samep is given, the values of the  other  parameters
TEXT: H (other  than  xname)  from  the  previous plot, hardcopy, or
TEXT: H asciiplot command is used unless re-defined on  the  command
TEXT: H line.
TEXT: H
TEXT: H      The title argument is used in the  place  of  the  plot
TEXT: H name at the bottom of the graph.
TEXT: H
TEXT: H      The linear keyword is used to override a  default  log-
TEXT: H scale plot (as in the output for an AC analysis).
TEXT: H
TEXT: H      Finally, the keyword polar to generate  a  polar  plot.
TEXT: H To  produce  a smith plot, use the keyword smith.  Note that
TEXT: H the data is transformed, so for smith plots you will see the
TEXT: H data  transformed by the function (x-1)/(x+1).  To produce a
TEXT: H polar plot with a smith  grid  but  without  performing  the
TEXT: H smith transform, use the keyword smithgrid.
TEXT: H

SUBJECT: Print
TITLE: Print:  Print values
TEXT: H
TEXT: H 5.3.28.  Print:  Print values
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     print [col] [line] expr ...
TEXT: H
TEXT: H
TEXT: H      Prints the vector described by the expression expr.
TEXT: H If  the col argument is present, print the vectors named
TEXT: H side by side.  If line is given, the vectors are printed
TEXT: H horizontally.   col  is the default, unless all the vec-
TEXT: H tors named have a length of one, in which case  line  is
TEXT: H the default.  The options width, length, and nobreak are
TEXT: H effective for this command (see asciiplot).  If the  ex-
TEXT: H pression is all, all of the vectors available are print-
TEXT: H ed.  Thus print col all > file prints everything in  the
TEXT: H file in SPICE2 format.  The scale vector (time, frequen-
TEXT: H cy) is always in the first column  unless  the  variable
TEXT: H noprintscale is true.
TEXT: H
TEXT: H

SUBJECT: Quit
TITLE: Quit:  Leave Spice3 or Nutmeg
TEXT: H
TEXT: H 5.3.29.  Quit:  Leave Spice3 or Nutmeg
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     quit
TEXT: H
TEXT: H
TEXT: H      Quit nutmeg or spice.
TEXT: H
TEXT: H

SUBJECT: Rehash
TITLE: Rehash: Reset internal hash tables
TEXT: H
TEXT: H 5.3.30.  Rehash: Reset internal hash tables
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     rehash
TEXT: H
TEXT: H
TEXT: H      Recalculate the  internal  hash  tables  used  when
TEXT: H looking  up UNIX commands, and make all UNIX commands in
TEXT: H the user's PATH available for command completion.   This
TEXT: H is  useless  unless  you  have  set  unixcom  first (see
TEXT: H above).
TEXT: H
TEXT: H

SUBJECT: Reset
TITLE: Reset*: Reset an analysis
TEXT: H
TEXT: H 5.3.31.  Reset*: Reset an analysis
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     reset
TEXT: H
TEXT: H
TEXT: H      Throw out any  intermediate  data  in  the  circuit
TEXT: H (e.g,  after  a breakpoint or after one or more analyses
TEXT: H have been done already), and re-parse  the  input  file.
TEXT: H The  circuit can then be re-run from it's initial state,
TEXT: H overriding the affect of any set or alter commands.   In
TEXT: H Spice-3e and earlier versions this was done automatical-
TEXT: H ly by the run command.
TEXT: H
TEXT: H

SUBJECT: Reshape
TITLE: Reshape: Alter the dimensionality or dimensions of a vector
TEXT: H
TEXT: H 5.3.32.  Reshape: Alter the dimensionality or dimensions  of
TEXT: H a vector
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     reshape vector vector ...
TEXT: H     or
TEXT: H     reshape vector vector ...  [ dimension, dimension, ...  ]
TEXT: H     or
TEXT: H     reshape vector vector ... [ dimension ][ dimension ] ...
TEXT: H
TEXT: H
TEXT: H      This command changes the dimensions of a vector  or
TEXT: H a  set  of vectors.  The final dimension may be left off
TEXT: H and it will be filled in automatically.   If  no  dimen-
TEXT: H sions  are  specified,  then the dimensions of the first
TEXT: H vector are copied to the other vectors.  An  error  mes-
TEXT: H sage of the form 'dimensions of x were inconsistent' can
TEXT: H be ignored.
TEXT: H
TEXT: H

SUBJECT: Resume
TITLE: Resume*: Continue a simulation after a stop
TEXT: H
TEXT: H 5.3.33.  Resume*: Continue a simulation after a stop
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     resume
TEXT: H
TEXT: H
TEXT: H      Resume a simulation after a  stop  or  interruption
TEXT: H (control-C).
TEXT: H
TEXT: H

SUBJECT: Rspice
TITLE: Rspice:  Remote spice submission
TEXT: H
TEXT: H 5.3.34.  Rspice:  Remote spice submission
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     rspice input file
TEXT: H
TEXT: H
TEXT: H      Runs a SPICE-3 remotely taking the input file as  a
TEXT: H SPICE-3  input  file, or the current circuit if no argu-
TEXT: H ment is given.  Nutmeg or Spice3 waits for  the  job  to
TEXT: H complete,  and  passes output from the remote job to the
TEXT: H user's standard output.  When the job  is  finished  the
TEXT: H data is loaded in as with aspice.  If the variable rhost
TEXT: H is set, nutmeg connects to this host instead of the  de-
TEXT: H fault  remote  Spice3 server machine.  This command uses
TEXT: H the "rsh" command and  thereby  requires  authentication
TEXT: H via  a  ".rhosts" file or other equivalent method.  Note
TEXT: H that "rsh" refers to the "remote shell"  program,  which
TEXT: H may  be  "remsh" on your system; to override the default
TEXT: H name of "rsh", set the variable  remote_shell.   If  the
TEXT: H variable  rprogram  is set, then rspice uses this as the
TEXT: H pathname to the program to run on the remote system.
TEXT: H
TEXT: H      Note: rspice will  not  acknowledge  elements  that
TEXT: H have  been  changed  via  the "alter" or "altermod" com-
TEXT: H mands.
TEXT: H
TEXT: H

SUBJECT: Run
TITLE: Run*: Run analysis from the input file
TEXT: H
TEXT: H 5.3.35.  Run*: Run analysis from the input file
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     run [rawfile]
TEXT: H
TEXT: H
TEXT: H      Run the simulation as specified in the input  file.
TEXT: H If  there were any of the control lines .ac, .op, .tran,
TEXT: H or .dc, they are executed.  The output is put in rawfile
TEXT: H if it was given, in addition to being available interac-
TEXT: H tively.  In Spice-3e and  earlier  versions,  the  input
TEXT: H file  would  be  re-read  and  any affects of the set or
TEXT: H alter commands would be reversed.  This is no longer the
TEXT: H affect.
TEXT: H
TEXT: H

SUBJECT: Rusage
TITLE: Rusage: Resource usage
TEXT: H
TEXT: H 5.3.36.  Rusage: Resource usage
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     rusage [resource ...]
TEXT: H
TEXT: H
TEXT: H      Print resource usage statistics.  If any  resources
TEXT: H are  given, just print the usage of that resource.  Most
TEXT: H resources require that a circuit be  loaded.   Currently
TEXT: H valid resources are:
TEXT: H
TEXT: H elapsed           The amount of  time  elapsed  since  the  last  rusage
TEXT: H                   elaped call.
TEXT: H faults            Number of page faults and context switches (BSD only).
TEXT: H space             Data space used.
TEXT: H time              CPU time used so far.
TEXT: H
TEXT: H temp              Operating temperature.
TEXT: H tnom              Temperature at which device parameters were measured.
TEXT: H equations         Circuit Equations
TEXT: H
TEXT: H time              Total Analysis Time
TEXT: H totiter           Total iterations
TEXT: H accept            Accepted timepoints
TEXT: H rejected          Rejected timepoints
TEXT: H
TEXT: H loadtime          Time spent loading the circuit matrix and RHS.
TEXT: H reordertime       Matrix reordering time
TEXT: H lutime            L-U decomposition time
TEXT: H solvetime         Matrix solve time
TEXT: H
TEXT: H trantime          Transient analysis time
TEXT: H tranpoints        Transient timepoints
TEXT: H traniter          Transient iterations
TEXT: H trancuriters      Transient iterations for the last time point*
TEXT: H tranlutime        Transient L-U decomposition time
TEXT: H transolvetime     Transient matrix solve time
TEXT: H
TEXT: H everything        All of the above.
TEXT: H
TEXT: H * listed incorrectly as "Transient iterations per point".
TEXT: H
TEXT: H

SUBJECT: Save
TITLE: Save*:  Save a set of outputs
TEXT: H
TEXT: H 5.3.37.  Save*:  Save a set of outputs
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     save [all | output ...]
TEXT: H     .save [all | output ...]
TEXT: H
TEXT: H
TEXT: H      Save a set of outputs, discarding the rest.   If  a
TEXT: H node has been mentioned in a save command, it appears in
TEXT: H the working plot after a run has completed,  or  in  the
TEXT: H rawfile  if  spice  is  run in batch mode.  If a node is
TEXT: H traced or plotted (see below) it  is  also  saved.   For
TEXT: H backward  compatibility,  if  there are no save commands
TEXT: H given, all outputs are saved.
TEXT: H
TEXT: H      When the keyword "all" appears in the save command,
TEXT: H all  default  values  (node  voltages and voltage source
TEXT: H currents) are saved in  addition  to  any  other  values
TEXT: H listed.
TEXT: H
TEXT: H

SUBJECT: Sens
TITLE: Sens*:  Run a sensitivity analysis
TEXT: H
TEXT: H 5.3.38.  Sens*:  Run a sensitivity analysis
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     sens output_variable
TEXT: H     sens output_variable ac ( DEC | OCT | LIN ) N Fstart Fstop
TEXT: H
TEXT: H
TEXT: H      Perform a Sensitivity analysis.  output_variable is
TEXT: H either  a  node  voltage (ex. "v(1)" or "v(A,out)") or a
TEXT: H current through a voltage source (ex. "i(vtest)").   The
TEXT: H first  form calculates DC sensitivities, the second form
TEXT: H calculates AC sensitivies.  The output values are in di-
TEXT: H mensions  of  change  in output per unit change of input
TEXT: H (as opposed to percent change in output or  per  percent
TEXT: H change of input).
TEXT: H
TEXT: H

SUBJECT: Set
TITLE: Set:  Set the value of a variable
TEXT: H
TEXT: H 5.3.39.  Set:  Set the value of a variable
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     set [word]
TEXT: H     set [word = value] ...
TEXT: H
TEXT: H
TEXT: H      Set the value  of  word  to  be  value,  if  it  is
TEXT: H present.   You can set any word to be any value, numeric
TEXT: H or string.  If no value is given then the value  is  the
TEXT: H boolean 'true'.
TEXT: H
TEXT: H
TEXT: H      The value of word may be inserted  into  a  command  by
TEXT: H writing  $word.   If  a  variable is set to a list of values
TEXT: H that are enclosed in parentheses (which  must  be  separated
TEXT: H from their values by white space), the value of the variable
TEXT: H is the list.
TEXT: H
TEXT: H      The variables used by nutmeg are listed in the  follow-
TEXT: H ing section.
TEXT: H

SUBJECT: Setcirc
TITLE: Setcirc*: Change the current circuit
TEXT: H
TEXT: H 5.3.40.  Setcirc*: Change the current circuit
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     setcirc [circuit name]
TEXT: H
TEXT: H
TEXT: H      The current circuit is the one that is used for the
TEXT: H simulation  commands  below.   When  a circuit is loaded
TEXT: H with the source  command  (see  below)  it  becomes  the
TEXT: H current circuit.
TEXT: H
TEXT: H

SUBJECT: Setplot
TITLE: Setplot:  Switch the current set of vectors
TEXT: H
TEXT: H 5.3.41.  Setplot:  Switch the current set of vectors
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     setplot [plotname]
TEXT: H
TEXT: H
TEXT: H      Set the current plot to the  plot  with  the  given
TEXT: H name,  or  if  no  name is given, prompt the user with a
TEXT: H menu. (Note that the plots are named as they are loaded,
TEXT: H with  names like tran1 or op2.  These names are shown by
TEXT: H the setplot and display commands and are used  by  diff,
TEXT: H below.)  If the "New plot" item is selected, the current
TEXT: H plot becomes one with no vectors defined.
TEXT: H
TEXT: H      Note that here the word "plot" refers to a group of
TEXT: H vectors that are the result of one SPICE run.  When more
TEXT: H than one file is loaded in, or more  than  one  plot  is
TEXT: H present in one file, nutmeg keeps them separate and only
TEXT: H shows you the vectors in the current plot.
TEXT: H
TEXT: H

SUBJECT: Settype
TITLE: Settype:  Set the type of a vector
TEXT: H
TEXT: H 5.3.42.  Settype:  Set the type of a vector
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     settype type vector ...
TEXT: H
TEXT: H
TEXT: H      Change the type of the named vectors to type.  Type
TEXT: H names can be found in the manual page for sconvert.
TEXT: H
TEXT: H

SUBJECT: Shell
TITLE: Shell:  Call the command interpreter
TEXT: H
TEXT: H 5.3.43.  Shell:  Call the command interpreter
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     shell [ command ]
TEXT: H
TEXT: H
TEXT: H      Call the operating  system's  command  interpreter;
TEXT: H execute  the  specified  command or call for interactive
TEXT: H use.
TEXT: H
TEXT: H

SUBJECT: Shift
TITLE: Shift:  Alter a list variable
TEXT: H
TEXT: H 5.3.44.  Shift:  Alter a list variable
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     shift [varname] [number]
TEXT: H
TEXT: H
TEXT: H      If varname is the name of a list  variable,  it  is
TEXT: H shifted  to the left by number elements (i.e, the number
TEXT: H leftmost elements are removed).  The default varname  is
TEXT: H argv, and the default number is 1.
TEXT: H
TEXT: H

SUBJECT: Show
TITLE: Show*: List device state
TEXT: H
TEXT: H 5.3.45.  Show*: List device state
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     show devices [ : parameters ] , ...
TEXT: H
TEXT: H
TEXT: H Old Form
TEXT: H
TEXT: H     show -v @device [ [ name ] ]
TEXT: H
TEXT: H
TEXT: H      The show command prints out tables summarizing  the
TEXT: H operating  condition  of selected devices (much like the
TEXT: H spice2 operation point summary).  If device is  missing,
TEXT: H a default set of devices are listed, if device is a sin-
TEXT: H gle letter, devices of that type are listed;  if  device
TEXT: H is  a subcircuit name (beginning and ending in ":") only
TEXT: H devices in that subcircuit are shown (end the name in  a
TEXT: H double-":"  to get devices within sub-subcircuits recur-
TEXT: H sively).  The second and third  forms  may  be  combined
TEXT: H ("letter:subcircuit:")   or   "letter:subcircuit::")  to
TEXT: H select a specific type of device from a  subcircuit.   A
TEXT: H device's  full  name  may be specified to list only that
TEXT: H device.  Finally, devices may be selected  by  model  by
TEXT: H using  the  form "#modelname" or ":subcircuit#modelname"
TEXT: H or "letter:subcircuit#modelname".
TEXT: H
TEXT: H      If no parameters are specified, the  values  for  a
TEXT: H standard  set  of parameters are listed.  If the list of
TEXT: H parameters contains a "+", the default set of parameters
TEXT: H is listed along with any other specified parameters.
TEXT: H
TEXT: H      For both devices and parameters, the word "all" has
TEXT: H the   obvious  meaning.   Note:  there  must  be  spaces
TEXT: H separating the ":" that divides the device list from the
TEXT: H parameter list.
TEXT: H
TEXT: H      The "old form" (with "-v") prints  the  data  in  a
TEXT: H older, more verbose pre-spice3f format.
TEXT: H
TEXT: H

SUBJECT: Showmod
TITLE: Showmod*: List model parameter values
TEXT: H
TEXT: H 5.3.46.  Showmod*: List model parameter values
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     showmod models [ : parameters ] , ...
TEXT: H
TEXT: H
TEXT: H      The showmod command operates like the show  command
TEXT: H (above)  but prints out model parameter values.  The ap-
TEXT: H plicable forms for models are a single letter specifying
TEXT: H the  device  type letter, "letter:subckt:", "modelname",
TEXT: H ":subckt:modelname", or "letter:subcircuit:modelname".
TEXT: H
TEXT: H

SUBJECT: Source
TITLE: Source:  Read a Spice3 input file
TEXT: H
TEXT: H 5.3.47.  Source:  Read a Spice3 input file
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     source file
TEXT: H
TEXT: H
TEXT: H      For Spice3: Read the Spice3 input file file.   Nut-
TEXT: H meg and Spice3 commands may be included in the file, and
TEXT: H must be enclosed between the lines .control  and  .endc.
TEXT: H These  commands  are executed immediately after the cir-
TEXT: H cuit is loaded, so a control line of ac  ...  works  the
TEXT: H same  as  the corresponding .ac card.  The first line in
TEXT: H any input file is considered a title line and not parsed
TEXT: H but  kept  as the name of the circuit.  The exception to
TEXT: H this rule is the file .spiceinit.  Thus, a  Spice3  com-
TEXT: H mand script must begin with a blank line and then with a
TEXT: H acters  *#  is considered a control line.  This makes it
TEXT: H possible to imbed commands in Spice3  input  files  that
TEXT: H are ignored by earlier versions of Spice2
TEXT: H
TEXT: H      For Nutmeg: Reads commands from the file  filename.
TEXT: H Lines beginning with the character * are considered com-
TEXT: H ments and ignored.
TEXT: H
TEXT: H

SUBJECT: Status
TITLE: Status*: Display breakpoint information
TEXT: H
TEXT: H 5.3.48.  Status*: Display breakpoint information
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     status
TEXT: H
TEXT: H
TEXT: H      Display all of the traces and breakpoints currently
TEXT: H in effect.
TEXT: H
TEXT: H

SUBJECT: Step
TITLE: Step*:  Run a fixed number of timepoints
TEXT: H
TEXT: H 5.3.49.  Step*:  Run a fixed number of timepoints
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     step [number]
TEXT: H
TEXT: H
TEXT: H      Iterate number times, or once, and then stop.
TEXT: H
TEXT: H

SUBJECT: Stop
TITLE: Stop*:  Set a breakpoint
TEXT: H
TEXT: H 5.3.50.  Stop*:  Set a breakpoint
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     stop [ after n] [ when value cond value ] ...
TEXT: H
TEXT: H
TEXT: H      Set a breakpoint.  The argument after n means  stop
TEXT: H after  n iteration number n, and the argument when value
TEXT: H cond value means stop when the first  value  is  in  the
TEXT: H given relation with the second value, the possible rela-
TEXT: H tions being
TEXT: H
TEXT: H           eq   or   =    equal to
TEXT: H           ne   or   <>   not equal to
TEXT: H           gt   or   >    greater than
TEXT: H           lt   or   <    less than
TEXT: H           ge   or   >=   greater than or equal to
TEXT: H           le   or   <=   less than or equal to
TEXT: H
TEXT: H
TEXT: H IO redirection is disabled for the stop command,  since  the
TEXT: H relational  operations  conflict with it (it doesn't produce
TEXT: H any output anyway).  The values above may be node  names  in
TEXT: H the  running circuit, or real values.  If more than one con-
TEXT: H dition is given, e.g.  stop after 4 when v(1) > 4 when  v(2)
TEXT: H < 2, the conjunction of the conditions is implied.
TEXT: H
TEXT: H

SUBJECT: Tf
TITLE: Tf*: Run a Transfer Function analysis
TEXT: H
TEXT: H 5.3.51.  Tf*: Run a Transfer Function analysis
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     tf output_node input_source
TEXT: H
TEXT: H
TEXT: H      The  tf  command  performs  a   transfer   function
TEXT: H analysis,     returning     the     transfer    function
TEXT: H (output/input), output resistance, and input  resistance
TEXT: H between  the  given  output  node  and  the  given input
TEXT: H source.  The analysis assumes a small-signal DC  (slowly
TEXT: H varying) input.
TEXT: H
TEXT: H

SUBJECT: Trace
TITLE: Trace*: Trace nodes
TEXT: H
TEXT: H 5.3.52.  Trace*: Trace nodes
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     trace [ node ...]
TEXT: H
TEXT: H
TEXT: H      For every step of an analysis,  the  value  of  the
TEXT: H node  is printed.  Several traces may be active at once.
TEXT: H Tracing is not applicable for all analyses.  To remove a
TEXT: H trace, use the delete command.
TEXT: H
TEXT: H

SUBJECT: Tran
TITLE: Tran*: Perform a transient analysis
TEXT: H
TEXT: H 5.3.53.  Tran*: Perform a transient analysis
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     tran Tstep Tstop [ Tstart [ Tmax ] ] [ UIC ]
TEXT: H
TEXT: H
TEXT: H      Perform a transient  analysis.   See  the  previous
TEXT: H sections of this manual for more details.
TEXT: H
TEXT: H

SUBJECT: Transpose
TITLE: Transpose: Swap the elements in a multi-dimensional data set
TEXT: H
TEXT: H 5.3.54.  Transpose: Swap the elements in a multi-dimensional
TEXT: H data set
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     transpose vector vector ...
TEXT: H
TEXT: H
TEXT: H      This command transposes a multidimensional  vector.
TEXT: H No analysis in Spice3 produces multidimensional vectors,
TEXT: H although the DC transfer curve may be run with two vary-
TEXT: H ing  sources.  You must use the "reshape" command to re-
TEXT: H form the one-dimensional vectors  into  two  dimensional
TEXT: H vectors.   In  addition,  the default scale is incorrect
TEXT: H for  plotting.   You  must  plot   versus   the   vector
TEXT: H corresponding  to  the  second source, but you must also
TEXT: H refer only to the first segment of  this  second  source
TEXT: H vector.   For  example  (circuit  to produce the tranfer
TEXT: H characteristic of a MOS transistor):
TEXT: H
TEXT: H     spice3 > dc vgg 0 5 1 vdd 0 5 1
TEXT: H     spice3 > plot i(vdd)
TEXT: H     spice3 > reshape all [6,6]
TEXT: H     spice3 > transpose i(vdd) v(drain)
TEXT: H     spice3 > plot i(vdd) vs v(drain)[0]
TEXT: H
TEXT: H
TEXT: H

SUBJECT: Unalias
TITLE: Unalias:  Retract an alias
TEXT: H
TEXT: H 5.3.55.  Unalias:  Retract an alias
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     unalias [word ...]
TEXT: H
TEXT: H
TEXT: H      Removes any aliases present for the words.
TEXT: H
TEXT: H

SUBJECT: Undefine
TITLE: Undefine:  Retract a definition
TEXT: H
TEXT: H 5.3.56.  Undefine:  Retract a definition
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     undefine function
TEXT: H
TEXT: H
TEXT: H      Definitions for the  named  user-defined  functions
TEXT: H are deleted.
TEXT: H
TEXT: H

SUBJECT: Unset
TITLE: Unset:  Clear a variable
TEXT: H
TEXT: H 5.3.57.  Unset:  Clear a variable
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     unset [word ...]
TEXT: H
TEXT: H
TEXT: H      Clear  the  value  of  the  specified   variable(s)
TEXT: H (word).
TEXT: H
TEXT: H

SUBJECT: Version
TITLE: Version:  Print the version of Spice
TEXT: H
TEXT: H 5.3.58.  Version:  Print the version of Spice
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     version [version id]
TEXT: H
TEXT: H
TEXT: H      Print out the version of nutmeg  that  is  running.
TEXT: H If  there are arguments, it checks to make sure that the
TEXT: H arguments match the current version of SPICE.  (This  is
TEXT: H mainly used as a Command: line in rawfiles.)
TEXT: H
TEXT: H

SUBJECT: Where
TITLE: Where:  Identify troublesome node or device
TEXT: H
TEXT: H 5.3.59.  Where:  Identify troublesome node or device
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     where
TEXT: H
TEXT: H
TEXT: H      When performing  a  transient  or  operating  point
TEXT: H analysis,  the  name of the last node or device to cause
TEXT: H non-convergence is saved.  The where command prints  out
TEXT: H this information so that you can examine the circuit and
TEXT: H either correct the problem or make a  bug  report.   You
TEXT: H may  do  this either in the middle of a run or after the
TEXT: H simulator has given up on the analysis.   For  transient
TEXT: H simulation, the iplot command can be used to monitor the
TEXT: H progress of the analysis.  When the analysis slows  down
TEXT: H severly   or   hangs,   interrupt  the  simulator  (with
TEXT: H control-C) and issue the where command.  Note that  only
TEXT: H one  node  or  device  is printed; there may be problems
TEXT: H with more than one node.
TEXT: H
TEXT: H

SUBJECT: Write
TITLE: Write: Write data to a file
TEXT: H
TEXT: H 5.3.60.  Write: Write data to a file
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     write [file] [exprs]
TEXT: H
TEXT: H
TEXT: H      Writes out the expressions to file.
TEXT: H
TEXT: H      First vectors are grouped together  by  plots,  and
TEXT: H written  out  as  such (i.e, if the expression list con-
TEXT: H tained three vectors from one plot and two from another,
TEXT: H then  two  plots are written, one with three vectors and
TEXT: H one with two).  Additionally, if the scale for a  vector
TEXT: H isn't present, it is automatically written out as well.
TEXT: H
TEXT: H      The default  format  is  ascii,  but  this  can  be
TEXT: H changed  with  the  set  filetype  command.  The default
TEXT: H filename is rawspice.raw, or the argument to the -r flag
TEXT: H on  the  command line, if there was one, and the default
TEXT: H expression list is all.
TEXT: H
TEXT: H

SUBJECT: Xgraph
TITLE: Xgraph: use the xgraph(1) program for plotting.
TEXT: H
TEXT: H 5.3.61.  Xgraph: use the xgraph(1) program for plotting.
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     xgraph file [exprs] [plot options]
TEXT: H
TEXT: H
TEXT: H      The spice3/nutmeg xgraph command  plots  data  like
TEXT: H the  plot command but via xgraph, a popular X11 plotting
TEXT: H program.
TEXT: H
TEXT: H      If file is either "temp" or "tmp" a temporary  file
TEXT: H is  used  to  hold  the  data  while being plotted.  For
TEXT: H available plot options, see the plot command.   All  op-
TEXT: H tions except for polar or smith plots are supported.
TEXT: H

SUBJECT: CONTROL STRUCTURES
TITLE: CONTROL STRUCTURES
TEXT: H
TEXT: H 5.4.  CONTROL STRUCTURES
TEXT: H
TEXT: H
SUBTOPIC: SPICE:While End
SUBTOPIC: SPICE:Repeat End
SUBTOPIC: SPICE:Dowhile End
SUBTOPIC: SPICE:Foreach End
SUBTOPIC: SPICE:If Then Else
SUBTOPIC: SPICE:Label
SUBTOPIC: SPICE:Goto
SUBTOPIC: SPICE:Continue
SUBTOPIC: SPICE:Break

SUBJECT: While End
TITLE: While - End
TEXT: H
TEXT: H 5.4.1.  While - End
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     while condition
TEXT: H             statement
TEXT: H             ...
TEXT: H     end
TEXT: H
TEXT: H
TEXT: H      While condition, an arbitrary algebraic expression,
TEXT: H is true, execute the statements.
TEXT: H
TEXT: H

SUBJECT: Repeat End
TITLE: Repeat - End
TEXT: H
TEXT: H 5.4.2.  Repeat - End
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     repeat [number]
TEXT: H             statement
TEXT: H             ...
TEXT: H     end
TEXT: H
TEXT: H
TEXT: H      Execute the statements number times, or forever  if
TEXT: H no argument is given.
TEXT: H
TEXT: H

SUBJECT: Dowhile End
TITLE: Dowhile - End
TEXT: H
TEXT: H 5.4.3.  Dowhile - End
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     dowhile condition
TEXT: H             statement
TEXT: H             ...
TEXT: H     end
TEXT: H
TEXT: H
TEXT: H      The same as while, except  that  the  condition  is
TEXT: H tested after the statements are executed.
TEXT: H
TEXT: H

SUBJECT: Foreach End
TITLE: Foreach - End
TEXT: H
TEXT: H 5.4.4.  Foreach - End
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     foreach var value ...
TEXT: H             statement
TEXT: H             ...
TEXT: H     end
TEXT: H
TEXT: H
TEXT: H      The statements are executed once for  each  of  the
TEXT: H values,  each  time  with  the  variable  var set to the
TEXT: H current one.  (var can be accessed by the $var  notation
TEXT: H - see below).
TEXT: H
TEXT: H

SUBJECT: If Then Else
TITLE: If - Then - Else
TEXT: H
TEXT: H 5.4.5.  If - Then - Else
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     if condition
TEXT: H             statement
TEXT: H             ...
TEXT: H     else
TEXT: H             statement
TEXT: H             ...
TEXT: H     end
TEXT: H
TEXT: H
TEXT: H      If the condition is non-zero then the first set  of
TEXT: H statements  are executed, otherwise the second set.  The
TEXT: H else and the second set of statements may be omitted.
TEXT: H
TEXT: H

SUBJECT: Label
TITLE: Label
TEXT: H
TEXT: H 5.4.6.  Label
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     label word
TEXT: H
TEXT: H
TEXT: H      If a statement of the form  goto  word  is  encoun-
TEXT: H tered,  control  is transferred to this point, otherwise
TEXT: H this is a no-op.
TEXT: H
TEXT: H

SUBJECT: Goto
TITLE: Goto
TEXT: H
TEXT: H 5.4.7.  Goto
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     goto word
TEXT: H
TEXT: H
TEXT: H      If a statement of the form label word is present in
TEXT: H the  block or an enclosing block, control is transferred
TEXT: H there.  Note that if the label is at the top  level,  it
TEXT: H must  be  before the goto statement (i.e, a forward goto
TEXT: H may occur only within a block).
TEXT: H
TEXT: H

SUBJECT: Continue
TITLE: Continue
TEXT: H
TEXT: H 5.4.8.  Continue
TEXT: H General Form
TEXT: H
TEXT: H     continue
TEXT: H
TEXT: H
TEXT: H      If there is a while, dowhile, or foreach block  en-
TEXT: H closing  this  statement, control passes to the test, or
TEXT: H in the case of foreach, the next value is taken.  Other-
TEXT: H wise an error results.
TEXT: H
TEXT: H

SUBJECT: Break
TITLE: Break
TEXT: H
TEXT: H 5.4.9.  Break
TEXT: H
TEXT: H General Form
TEXT: H
TEXT: H     break
TEXT: H
TEXT: H
TEXT: H      If there is a while, dowhile, or foreach block  en-
TEXT: H closing this statement, control passes out of the block.
TEXT: H Otherwise an error results.
TEXT: H
TEXT: H      Of course, control structures may be nested.   When
TEXT: H a  block  is  entered and the input is the terminal, the
TEXT: H prompt becomes a number  of  >'s  corresponding  to  the
TEXT: H number of blocks the user has entered.  The current con-
TEXT: H trol structures may be examined with the debugging  com-
TEXT: H mand cdump.
TEXT: H

SUBJECT: VARIABLES
TITLE: VARIABLES
TEXT: H
TEXT: H 5.5.  VARIABLES
TEXT: H
TEXT: H
TEXT: H      The operation of both Nutmeg and Spice3 may be affected
TEXT: H by setting variables with the "set" command.  In addition to
TEXT: H the variables mentioned below, the  set  command  in  Spice3
TEXT: H also  affect  the behaviour of the simulator via the options
TEXT: H previously described under the section on ".OPTIONS".
TEXT: H
TEXT: H      The variables meaningful to nutmeg which may be altered
TEXT: H by the set command are:
TEXT: H
TEXT: H diff_abstol       The absolute tolerance used by the diff command.
TEXT: H appendwrite       Append to the file when a write command  is  is-
TEXT: H                   sued, if one already exists.
TEXT: H colorN           These variables determine the colors used, if  X
TEXT: H                   is  being  run  on  a  color  display.  N may be
TEXT: H                   between 0 and 15.  Color 0  is  the  background,
TEXT: H                   color 1 is the grid and text color, and colors 2
TEXT: H                   through 15 are used in order for  vectors  plot-
TEXT: H                   ted.  The value of the color variables should be
TEXT: H                   names of colors, which may be found in the  file
TEXT: H                   /usr/lib/rgb.txt.
TEXT: H combplot          Plot vectors by drawing  a  vertical  line  from
TEXT: H                   each  point to the X-axis, as opposed to joining
TEXT: H                   the points.  Note that this option  is  subsumed
TEXT: H                   in the plottype option, below.
TEXT: H cpdebug           Print cshpar debugging information (must be com-
TEXT: H                   plied  with the -DCPDEBUG flag).  Unsupported in
TEXT: H                   the current release.
TEXT: H
TEXT: H
TEXT: H debug             If set then a lot of debugging information is
TEXT: H                   printed (must be compiled with the -DFTEDEBUG
TEXT: H                   flag).  Unsupported in the current release.
TEXT: H device            The name (/dev/tty??) of the graphics device.
TEXT: H                   If  this  variable  isn't set then the user's
TEXT: H                   terminal is used.  To do plotting on  another
TEXT: H                   monitor  you  probably  have  to set both the
TEXT: H                   device and term variables.  (If device is set
TEXT: H                   to  the  name  of  a  file,  nutmeg dumps the
TEXT: H                   graphics control codes into this file -- this
TEXT: H                   is useful for saving plots.)
TEXT: H echo              Print out each command before it is executed.
TEXT: H filetype          This can  be  either  ascii  or  binary,  and
TEXT: H                   determines  what  format are.  The default is
TEXT: H                   ascii.
TEXT: H
TEXT: H
TEXT: H  fourgridsize      How many points to use for interpolating
TEXT: H                    into when doing fourier analysis.
TEXT: H  gridsize          If this variable is set to  an  integer,
TEXT: H                    this  number  is  used  as the number of
TEXT: H                    equally spaced points to use for the  Y-
TEXT: H                    axis   when   plotting.   Otherwise  the
TEXT: H                    current scale is  used  (which  may  not
TEXT: H                    have  equally  spaced  points).   If the
TEXT: H                    current scale isn't strictly  monotonic,
TEXT: H                    then this option has no effect.
TEXT: H  hcopydev          If this is set, when the  hardcopy  com-
TEXT: H                    mand  is  run  the resulting file is au-
TEXT: H                    tomatically printed on the printer named
TEXT: H                    hcopydev with the command lpr -Phcopydev
TEXT: H                    -g file.
TEXT: H
TEXT: H
TEXT: H  hcopyfont         This variable specifies  the  font  name
TEXT: H                    for hardcopy output plots.  The value is
TEXT: H                    device dependent.
TEXT: H  hcopyfontsize     This is a scaling factor  for  the  font
TEXT: H                    used in hardcopy plots.
TEXT: H  hcopydevtype      This variable specifies the type of  the
TEXT: H                    printer  output  to  use in the hardcopy
TEXT: H                    command.  If hcopydevtype  is  not  set,
TEXT: H                    plot  (5)  format is assumed.  The stan-
TEXT: H                    dard distribution  currently  recognizes
TEXT: H                    postscript as an alternative output for-
TEXT: H                    mat.   When  used  in  conjunction  with
TEXT: H                    hcopydev,  hcopydevtype should specify a
TEXT: H                    format supported by the printer.
TEXT: H  height            The length of the page for asciiplot and
TEXT: H                    print col.
TEXT: H  history           The number of events to save in the his-
TEXT: H                    tory list.
TEXT: H  lprplot5          This is a printf(3s) style format string
TEXT: H                    used  to  specify the command to use for
TEXT: H                    sending plot(5)-style plots to a printer
TEXT: H                    or  plotter.   The  first parameter sup-
TEXT: H                    plied is the printer  name,  the  second
TEXT: H                    parameter  supplied  is a file name con-
TEXT: H                    taining the plot.  Both  parameters  are
TEXT: H                    strings.   It is trivial to cause Spice3
TEXT: H                    to abort  by  supplying  a  unreasonable
TEXT: H                    format string.
TEXT: H  lprps             This is a printf(3s) style format string
TEXT: H                    used  to  specify the command to use for
TEXT: H                    sending PostScript plots to a printer or
TEXT: H                    plotter.   The  first parameter supplied
TEXT: H                    is the printer name, the second  parame-
TEXT: H                    ter  supplied  is a file name containing
TEXT: H                    the plot.  Both parameters are  strings.
TEXT: H                    It  is  trivial to cause Spice3 to abort
TEXT: H                    by  supplying  a   unreasonable   format
TEXT: H                    string.
TEXT: H  nfreqs            The number of frequencies to compute  in
TEXT: H                    the fourier command. (Defaults to 10.)
TEXT: H  nobreak           Don't have asciiplot and print col break
TEXT: H                    between pages.
TEXT: H
TEXT: H
TEXT: H noasciiplotvalue   Don't print the first vector plotted  to
TEXT: H                    the left when doing an asciiplot.
TEXT: H noclobber          Don't overwrite existing files when  do-
TEXT: H                    ing IO redirection.
TEXT: H noglob             Don't expand the global characters  `*',
TEXT: H                    `?', `[', and `]'.  This is the default.
TEXT: H nogrid             Don't plot a grid when  graphing  curves
TEXT: H                    (but do label the axes).
TEXT: H nomoremode         If nomoremode is  not  set,  whenever  a
TEXT: H                    large amount of data is being printed to
TEXT: H                    the screen (e.g, the print or  asciiplot
TEXT: H                    commands),  the  output is stopped every
TEXT: H                    screenful and continues when a  carriage
TEXT: H                    return  is  typed.  If nomoremode is set
TEXT: H                    then data scrolls off the screen without
TEXT: H                    check.
TEXT: H nonomatch          If noglob is unset and a global  expres-
TEXT: H                    sion  cannot  be matched, use the global
TEXT: H                    characters  literally  instead  of  com-
TEXT: H                    plaining.
TEXT: H
TEXT: H
TEXT: H nosort            Don't have display sort the variable names.
TEXT: H noprintscale      Don't  print  the  scale  in  the  leftmost
TEXT: H                   column when a print col command is given.
TEXT: H numdgt            The number of digits to print when printing
TEXT: H                   tables  of  data (fourier, print col).  The
TEXT: H                   default precision is 6 digits.  On the VAX,
TEXT: H                   approximately  16 decimal digits are avail-
TEXT: H                   able  using  double  precision,  so  numdgt
TEXT: H                   should  not be more than 16.  If the number
TEXT: H                   is negative, one fewer digit is printed  to
TEXT: H                   ensure constant widths in tables.
TEXT: H plottype          This should be  one  of  normal,  comb,  or
TEXT: H                   point:chars.   normal, the  default, causes
TEXT: H                   points to be plotted as parts of  connected
TEXT: H                   lines.   comb causes a comb plot to be done
TEXT: H                   (see the description of the combplot  vari-
TEXT: H                   able above).  point causes each point to be
TEXT: H                   plotted separately - the chars are  a  list
TEXT: H                   of characters that are used for each vector
TEXT: H                   plotted.  If they are omitted  then  a  de-
TEXT: H                   fault set is used.
TEXT: H polydegree        The degree of the polynomial that the  plot
TEXT: H                   command should fit to the data.  If polyde-
TEXT: H                   gree is N, then nutmeg fits a degree N  po-
TEXT: H                   lynomial  to every set of N points and draw
TEXT: H                   10 intermediate points in between each end-
TEXT: H                   point.   If  the  points  aren't monotonic,
TEXT: H                   then it tries rotating the curve and reduc-
TEXT: H                   ing the degree until a fit is achieved.
TEXT: H polysteps         The number of points to interpolate between
TEXT: H                   every  pair  of points available when doing
TEXT: H                   curve fitting.  The default is 10.
TEXT: H program           The name of the current program (argv[0]).
TEXT: H prompt            The prompt, with the character `!' replaced
TEXT: H                   by the current event number.
TEXT: H
TEXT: H
TEXT: H rawfile           The default name for rawfiles created.
TEXT: H diff_reltol       The relative tolerance used by the diff command.
TEXT: H remote_shell      Overrides the name used  for  generating  rspice
TEXT: H                   runs (default is "rsh").
TEXT: H rhost             The machine to use for remote SPICE-3 runs,  in-
TEXT: H                   stead of the default one (see the description of
TEXT: H                   the rspice command, below).
TEXT: H rprogram          The name of the remote program  to  use  in  the
TEXT: H                   rspice command.
TEXT: H slowplot          Stop between each graph plotted and wait for the
TEXT: H                   user to type return before continuing.
TEXT: H sourcepath        A list of  the  directories  to  search  when  a
TEXT: H                   source  command  is  given.   The default is the
TEXT: H                   current directory and the standard spice library
TEXT: H                   (/usr/local/lib/spice,  or  whatever  LIBPATH is
TEXT: H                   #defined to in the Spice3 source.
TEXT: H spicepath         The program to use for the aspice command.   The
TEXT: H                   default is /cad/bin/spice.
TEXT: H term              The mfb name of the current terminal.
TEXT: H units             If this is degrees, then all the trig  functions
TEXT: H                   will use degrees instead of radians.
TEXT: H unixcom           If a command isn't defined, try to execute it as
TEXT: H                   a UNIX command.  Setting this option has the ef-
TEXT: H                   fect of giving a rehash command, below.  This is
TEXT: H                   useful  for  people  who want to use nutmeg as a
TEXT: H                   login shell.
TEXT: H verbose           Be verbose.  This is midway between echo and de-
TEXT: H                   bug / cpdebug.
TEXT: H diff_vntol        The absolute voltage tolerance used by the  diff
TEXT: H                   command.
TEXT: H
TEXT: H
TEXT: H  width             The width of the page for asciiplot  and
TEXT: H                    print col.
TEXT: H  x11lineararcs     Some X11 implementations have  poor  arc
TEXT: H                    drawing.  If you set this option, Spice3
TEXT: H                    will plot using an approximation to  the
TEXT: H                    curve using straight lines.
TEXT: H  xbrushheight      The height of the brush to use if  X  is
TEXT: H                    being run.
TEXT: H  xbrushwidth       The width of the brush to use  if  X  is
TEXT: H                    being run.
TEXT: H  xfont             The name of the X font to use when plot-
TEXT: H                    ting data and entering labels.  The plot
TEXT: H                    may  not  look  good  if   this   is   a
TEXT: H                    variable-width font.
TEXT: H
TEXT: H
TEXT: H      There are several set variables that  Spice3  uses  but
TEXT: H Nutmeg does not. They are:
TEXT: H
TEXT: H  editor            The editor to use for the edit command.
TEXT: H  modelcard         The name of  the  model  card  (normally
TEXT: H                    May.in -432u
TEXT: H                    noaskquit         Do not check to make sure that there are
TEXT: H                                      no  circuits  suspended and no plots un-
TEXT: H                                      saved.  Normally Spice3 warns  the  user
TEXT: H                                      when  he  tries  to  quit if this is the
TEXT: H                                      case.
TEXT: H                    nobjthack         Assume that BJTs have 4 nodes.
TEXT: H                    noparse           Don't attempt to parse input files  when
TEXT: H                                      they are read in (useful for debugging).
TEXT: H                                      Of course, they cannot be  run  if  they
TEXT: H                                      are not parsed.
TEXT: H                    nosubckt          Don't expand subcircuits.
TEXT: H                    renumber          Renumber input lines when an input  file
TEXT: H                                      has .include's.
TEXT: H                    subend            The card to  end  subcircuits  (normally
TEXT: H                    subinvoke         The prefix to invoke  subcircuits  (nor-
TEXT: H                                      mally x).
TEXT: H                    substart          The card to begin subcircuits  (normally
TEXT: H
TEXT: H

SUBJECT: MISCELLANEOUS
TITLE: MISCELLANEOUS
TEXT: H
TEXT: H 5.6.  MISCELLANEOUS
TEXT: H
TEXT: H      If there are subcircuits  in  the  input  file,  Spice3
TEXT: H expands instances of them.  A subcircuit is delimited by the
TEXT: H cards .subckt and .ends, or whatever the value of the  vari-
TEXT: H ables  substart and subend is, respectively.  An instance of
TEXT: H a subcircuit is created by specifying a device with type 'x'
TEXT: H - the device line is written
TEXT: H
TEXT: H     xname node1 node2 ... subcktname
TEXT: H
TEXT: H
TEXT: H where the nodes are the node names that replace  the  formal
TEXT: H parameters on the .subckt line.  All nodes that are not for-
TEXT: H mal parameters are prepended with  the  name  given  to  the
TEXT: H instance  and  a ':', as are the names of the devices in the
TEXT: H subcircuit.  If there are several nested  subcircuits,  node
TEXT: H and device names look like subckt1:subckt2:...:name.  If the
TEXT: H variable subinvoke is set, then it is  used  as  the  prefix
TEXT: H that specifies instances of subcircuits, instead of 'x'.
TEXT: H
TEXT: H      Nutmeg occasionally checks to  see  if  it  is  getting
TEXT: H close to running out of space, and warns the user if this is
TEXT: H the case. (This is more likely to be useful with  the  SPICE
TEXT: H front end.)
TEXT: H
TEXT: H      C-shell type quoting with "" and '', and backquote sub-
TEXT: H stitution  may  be  used.   Within single quotes, no further
TEXT: H substitution (like history substitution) is done, and within
TEXT: H double  quotes, the words are kept together but further sub-
TEXT: H stitution is done.  Any text between backquotes is  replaced
TEXT: H by  the  result  of  executing  the text as a command to the
TEXT: H shell.
TEXT: H
TEXT: H      Tenex-style ('set filec' in the 4.3  C-shell)  command,
TEXT: H filename,   and  keyword  completion  is  possible:  If  EOF
TEXT: H (control-D) is typed after the first character on the  line,
TEXT: H a  list of the commands or possible arguments is printed (If
TEXT: H it is alone on the line it  exits  nutmeg).   If  escape  is
TEXT: H typed,  then  nutmeg  trys  to  complete  what  the user has
TEXT: H already typed.  To get a list  of  all  commands,  the  user
TEXT: H should type <space> ^D.
TEXT: H
TEXT: H      The values of variables may  be  used  in  commands  by
TEXT: H writing  $varname  where  the  value  of  the variable is to
TEXT: H appear.  The special variables $$ and $< refer to  the  pro-
TEXT: H cess  ID  of  the  program and a line of input which is read
TEXT: H from the terminal when the variable  is  evaluated,  respec-
TEXT: H tively.   If  a variable has a name of the form $&word, then
TEXT: H word is considered a vector (see above), and  its  value  is
TEXT: H taken  to  be the value of the variable.  If $foo is a valid
TEXT: H variable,  and  is  of  type  list,  then   the   expression
TEXT: H $foo[low-high]  represents  a range of elements.  Either the
TEXT: H upper index or the lower may be left out, and the reverse of
TEXT: H a list may be obtained with $foo[len-0].  Also, the notation
TEXT: H $?foo evaluates to 1 if the variable foo is defined, 0  oth-
TEXT: H erwise, and $#foo evaluates to the number of elements in foo
TEXT: H if it is a list, 1 if it is a number or string, and 0 if  it
TEXT: H is a boolean variable.
TEXT: H
TEXT: H      History substitutions, similar to C-shell history  sub-
TEXT: H stitutions, are also available - see the C-shell manual page
TEXT: H for all of the details.
TEXT: H
TEXT: H      The characters ~, {, and } have  the  same  effects  as
TEXT: H they do in the C-Shell, i.e., home directory and alternative
TEXT: H expansion.  It is possible to use the wildcard characters *,
TEXT: H ?,  [, and ] also, but only if you unset noglob first.  This
TEXT: H makes them rather useless for typing algebraic  expressions,
TEXT: H so you should set noglob again after you are done with wild-
TEXT: H card expansion.  Note that the  pattern  [^abc]  matchs  all
TEXT: H characters except a, b, and c.
TEXT: H
TEXT: H      IO redirection is available - the symbols  >,  >>,  >&,
TEXT: H >>&, and < have the same effects as in the C-shell.
TEXT: H
TEXT: H      You may type multiple commands on one  line,  separated
TEXT: H by semicolons.
TEXT: H
TEXT: H      If you want to use a different  mfbcap  file  than  the
TEXT: H default  (usually  ~cad/lib/mfbcap),  you  have  to  set the
TEXT: H environment variable SPICE_MFBCAP before you start nutmeg or
TEXT: H spice.   The  -m  option  and  the mfbcap variable no longer
TEXT: H work.
TEXT: H
TEXT: H      If X is being used, the cursor may be positioned at any
TEXT: H point  on  the  screen  when the window is up and characters
TEXT: H typed at the keyboard are added to the window at that point.
TEXT: H The  window  may  then be sent to a printer using the xpr(1)
TEXT: H program.
TEXT: H
TEXT: H      Nutmeg can be run under VAX/VMS,  as  well  as  several
TEXT: H other operating systems.  Some features like command comple-
TEXT: H tion, expansion of *, ?, and [], backquote substitution, the
TEXT: H shell command, and so forth do not work.
TEXT: H
TEXT: H      On some systems you  have  to  respond  to  the  -more-
TEXT: H prompt during plot with a carriage return instead of any key
TEXT: H as you can do on UNIX.

SUBJECT: BUGS
TITLE: BUGS
TEXT: H
TEXT: H 5.7.  BUGS
TEXT: H
TEXT: H      The label entry facilities are primitive.  You must  be
TEXT: H careful to type slowly when entering labels -- nutmeg checks
TEXT: H for input once every second, and can get confused if charac-
TEXT: H ters arrive faster.
TEXT: H
TEXT: H      If you redefine colors after  creating  a  plot  window
TEXT: H with X, and then cause the window to be redrawn, it does not
TEXT: H redraw in the correct colors.
TEXT: H
TEXT: H
TEXT: H      When defining aliases like
TEXT: H
TEXT: H     alias pdb plot db( '!:1' - '!:2' )
TEXT: H
TEXT: H
TEXT: H you must be careful to quote the argument list substitu-
TEXT: H tions  in  this manner.  If you quote the whole argument
TEXT: H it might not work properly.
TEXT: H
TEXT: H
TEXT: H
TEXT: H      In a user-defined function,  the  arguments  cannot  be
TEXT: H part of a name that uses the plot.vec syntax.  For example:
TEXT: H
TEXT: H     define check(v(1)) cos(tran1.v(1))
TEXT: H
TEXT: H
TEXT: H does not work.
TEXT: H
TEXT: H
TEXT: H      If you type plot all all, or otherwise use  a  wildcard
TEXT: H reference  for  one  plot  twice in a command, the effect is
TEXT: H unpredictable.
TEXT: H
TEXT: H      The asciiplot command doesn't deal with log  scales  or
TEXT: H the delta keywords.
TEXT: H
TEXT: H
TEXT: H      Often the names of terminals recognized by MFB are dif-
TEXT: H ferent  from  those  in  /etc/termcap.  Thus you may have to
TEXT: H reset your terminal type with the command
TEXT: H
TEXT: H     set term = termname
TEXT: H
TEXT: H
TEXT: H where termname is the name in the mfbcap file.
TEXT: H
TEXT: H
TEXT: H      The hardcopy command is useless on VMS and  other  sys-
TEXT: H tems without the plot command, unless the user has a program
TEXT: H that understands plot(5) format.
TEXT: H
TEXT: H      Spice3 recognizes all  the  notations  used  in  SPICE2
TEXT: H .plot  cards,  and  translates  vp(1)  into ph(v(1)), and so
TEXT: H forth.  However, if there are spaces in these names it won't
TEXT: H work.  Hence v(1, 2) and (-.5, .5) aren't recognized.
TEXT: H
TEXT: H      BJTs can have either 3 or 4 nodes, which makes it  dif-
TEXT: H ficult  for the subcircuit expansion routines to decide what
TEXT: H to rename.  If the fourth parameter has been declared  as  a
TEXT: H model  name, then it is assumed that there are 3 nodes, oth-
TEXT: H erwise it is considered a node.  To disable  this,  you  can
TEXT: H set  the  variable  "nobjthack"  which forces BJTs to have 4
TEXT: H nodes (for the purposes of subcircuit expansion, at least).
TEXT: H
TEXT: H      The @name[param] notation might not  work  with  trace,
TEXT: H iplot, etc.  yet.
TEXT: H
TEXT: H      The first line of a command file (except for the  .spi-
TEXT: H ceinit file) should be a comment, otherwise SPICE may create
TEXT: H an empty circuit.
TEXT: H
TEXT: H      Files specified on the command  line  are  read  before
TEXT: H .spiceinit is read.

SUBJECT: BIBLIOGRAPHY
TITLE: BIBLIOGRAPHY
TEXT: H
TEXT: H 6.  BIBLIOGRAPHY
TEXT: H
TEXT: H
TEXT: H [1]  A. Vladimirescu and  S.  Liu,  The  Simulation  of  MOS
TEXT: H      Integrated Circuits Using SPICE2
TEXT: H      ERL Memo No. ERL M80/7, Electronics Research Laboratory
TEXT: H      University of California, Berkeley, October 1980
TEXT: H
TEXT: H [2]  T. Sakurai and A. R. Newton, A Simple MOSFET Model  for
TEXT: H      Circuit Analysis and its application to CMOS gate delay
TEXT: H      analysis and series-connected MOSFET Structure
TEXT: H      ERL Memo No. ERL M90/19, Electronics  Research  Labora-
TEXT: H      tory,
TEXT: H      University of California, Berkeley, March 1990
TEXT: H
TEXT: H [3]  B. J. Sheu, D. L. Scharfetter, and  P.  K.  Ko,  SPICE2
TEXT: H      Implementation of BSIM
TEXT: H      ERL Memo No. ERL M85/42, Electronics  Research  Labora-
TEXT: H      tory
TEXT: H      University of California, Berkeley, May 1985
TEXT: H
TEXT: H [4]  J. R. Pierret, A MOS Parameter Extraction  Program  for
TEXT: H      the BSIM Model
TEXT: H      ERL Memo  Nos.  ERL  M84/99  and  M84/100,  Electronics
TEXT: H      Research Laboratory
TEXT: H      University of California, Berkeley, November 1984
TEXT: H
TEXT: H [5]  Min-Chie   Jeng,   Design   and   Modeling   of   Deep-
TEXT: H      Submicrometer MOSFETSs
TEXT: H      ERL Memo Nos. ERL M90/90, Electronics Research  Labora-
TEXT: H      tory
TEXT: H      University of California, Berkeley, October 1990
TEXT: H
TEXT: H [6]  Soyeon Park, Analysis and SPICE implementation of  High
TEXT: H      Temperature Effects on MOSFET,
TEXT: H      Master's thesis, University  of  California,  Berkeley,
TEXT: H      December 1986.
TEXT: H
TEXT: H [7]  Clement Szeto, Simulator of Temperature Effects in MOS-
TEXT: H      FETs (STEIM),
TEXT: H      Master's thesis, University  of  California,  Berkeley,
TEXT: H      May 1988.
TEXT: H
TEXT: H [8]  J.S. Roychowdhury and D.O.  Pederson,  Efficient  Tran-
TEXT: H      sient Simulation of Lossy Interconnect,
TEXT: H      Proc. of the 28th ACM/IEEE  Design  Automation  Confer-
TEXT: H      ence, June 17-21 1991, San Francisco
TEXT: H
TEXT: H [9]  A. E. Parker and D. J. Skellern, An Improved FET  Model
TEXT: H      for Computer Simulators,
TEXT: H      IEEE Trans CAD, vol. 9, no. 5, pp. 551-553, May 1990.
TEXT: H
TEXT: H [10] R. Saleh and A. Yang, Editors, Simulation and Modeling,
TEXT: H      IEEE Circuits and Devices, vol. 8, no. 3, pp.  7-8  and
TEXT: H      49, May 1992
TEXT: H
TEXT: H [11] H.Statz et al., GaAs FET Device and Circuit  Simulation
TEXT: H      in SPICE,
TEXT: H      IEEE Transactions on Electron Devices, V34,  Number  2,
TEXT: H      February, 1987 pp160-169.

SUBJECT: APPENDIX A
TITLE: APPENDIX A:  EXAMPLE CIRCUITS
TEXT: H
TEXT: H A.  APPENDIX A:  EXAMPLE CIRCUITS
TEXT: H
TEXT: H
SUBTOPIC: SPICE:Circuit 1
SUBTOPIC: SPICE:Circuit 2
SUBTOPIC: SPICE:Circuit 3
SUBTOPIC: SPICE:Circuit 4
SUBTOPIC: SPICE:Circuit 5

SUBJECT: Circuit 1
TITLE: Circuit 1:  Differential Pair
TEXT: H
TEXT: H A.1.  Circuit 1:  Differential Pair
TEXT: H
TEXT: H
TEXT: H      The following deck determines the dc operating point of
TEXT: H a simple differential pair. In addition, the ac small-signal
TEXT: H response  is  computed  over  the  frequency  range  1Hz  to
TEXT: H 100MEGHz.
TEXT: H
TEXT: H     SIMPLE DIFFERENTIAL PAIR
TEXT: H     VCC  7  0    12
TEXT: H     VEE  8  0    -12
TEXT: H     VIN  1  0    AC 1
TEXT: H     RS1  1  2    1K
TEXT: H     RS2  6  0    1K
TEXT: H     Q1   3  2  4 MOD1
TEXT: H     Q2   5  6  4 MOD1
TEXT: H     RC1  7  3    10K
TEXT: H     RC2  7  5    10K
TEXT: H     RE   4  8    10K
TEXT: H     .MODEL MOD1 NPN BF=50 VAF=50 IS=1.E-12 RB=100 CJC=.5PF TF=.6NS
TEXT: H     .TF V(5) VIN
TEXT: H     .AC DEC 10 1 100MEG
TEXT: H     .END
TEXT: H
TEXT: H
TEXT: H
TEXT: H

SUBJECT: Circuit 2
TITLE: Circuit 2:  MOSFET Characterization
TEXT: H
TEXT: H A.2.  Circuit 2:  MOSFET Characterization
TEXT: H
TEXT: H The following deck computes the output characteristics of  a
TEXT: H MOSFET device over the range 0-10V for VDS and 0-5V for VGS.
TEXT: H
TEXT: H
TEXT: H     MOS OUTPUT CHARACTERISTICS
TEXT: H     .OPTIONS NODE NOPAGE
TEXT: H     VDS  3  0
TEXT: H     VGS  2  0
TEXT: H     M1   1  2  0  0 MOD1 L=4U W=6U AD=10P AS=10P
TEXT: H     * VIDS MEASURES ID, WE COULD HAVE USED VDS, BUT ID WOULD BE NEGATIVE
TEXT: H     VIDS 3  1
TEXT: H     .MODEL MOD1 NMOS VTO=-2 NSUB=1.0E15 UO=550
TEXT: H     .DC VDS 0 10 .5 VGS 0 5 1
TEXT: H     .END
TEXT: H
TEXT: H
TEXT: H
TEXT: H

SUBJECT: Circuit 3
TITLE: Circuit 3:  RTL Inverter
TEXT: H
TEXT: H A.3.  Circuit 3:  RTL Inverter
TEXT: H
TEXT: H
TEXT: H      The following deck determines the dc transfer curve and
TEXT: H the  transient pulse response of a simple RTL inverter.  The
TEXT: H input is a pulse from 0 to 5 Volts  with  delay,  rise,  and
TEXT: H fall  times of 2ns and a pulse width of 30ns.  The transient
TEXT: H interval is 0 to 100ns,  with  printing  to  be  done  every
TEXT: H nanosecond.
TEXT: H
TEXT: H
TEXT: H     SIMPLE RTL INVERTER
TEXT: H     VCC  4  0    5
TEXT: H     VIN  1  0    PULSE 0 5 2NS 2NS 2NS 30NS
TEXT: H     RB   1  2    10K
TEXT: H     Q1   3  2  0 Q1
TEXT: H     RC   3  4    1K
TEXT: H     .MODEL Q1 NPN BF 20 RB 100 TF .1NS CJC 2PF
TEXT: H     .DC VIN 0 5 0.1
TEXT: H     .TRAN 1NS 100NS
TEXT: H     .END
TEXT: H
TEXT: H
TEXT: H

SUBJECT: Circuit 4
TITLE: Circuit 4:  Four-Bit Binary Adder
TEXT: H
TEXT: H A.4.  Circuit 4:  Four-Bit Binary Adder
TEXT: H
TEXT: H
TEXT: H      The following deck simulates a four-bit  binary  adder,
TEXT: H using  several subcircuits to describe various pieces of the
TEXT: H overall circuit.
TEXT: H
TEXT: H
TEXT: H     ADDER - 4 BIT ALL-NAND-GATE BINARY ADDER
TEXT: H
TEXT: H     *** SUBCIRCUIT DEFINITIONS
TEXT: H     .SUBCKT NAND 1 2 3 4
TEXT: H     *   NODES:  INPUT(2), OUTPUT, VCC
TEXT: H     Q1        9  5  1 QMOD
TEXT: H     D1CLAMP   0  1    DMOD
TEXT: H     Q2        9  5  2 QMOD
TEXT: H     D2CLAMP   0  2    DMOD
TEXT: H     RB        4  5    4K
TEXT: H     R1        4  6    1.6K
TEXT: H     Q3        6  9  8 QMOD
TEXT: H     R2        8  0    1K
TEXT: H     RC        4  7    130
TEXT: H     Q4        7  6 10 QMOD
TEXT: H     DVBEDROP 10  3    DMOD
TEXT: H     Q5        3  8  0 QMOD
TEXT: H     .ENDS NAND
TEXT: H
TEXT: H     .SUBCKT ONEBIT 1 2 3 4 5 6
TEXT: H     *   NODES:  INPUT(2), CARRY-IN, OUTPUT, CARRY-OUT, VCC
TEXT: H     X1   1  2  7  6   NAND
TEXT: H     X2   1  7  8  6   NAND
TEXT: H     X3   2  7  9  6   NAND
TEXT: H     X4   8  9 10  6   NAND
TEXT: H     X5   3 10 11  6   NAND
TEXT: H     X6   3 11 12  6   NAND
TEXT: H     X7  10 11 13  6   NAND
TEXT: H     X8  12 13  4  6   NAND
TEXT: H     X9  11  7  5  6   NAND
TEXT: H     .ENDS ONEBIT
TEXT: H
TEXT: H     .SUBCKT TWOBIT 1 2 3 4 5 6 7 8 9
TEXT: H     *   NODES:  INPUT - BIT0(2) / BIT1(2), OUTPUT - BIT0 / BIT1,
TEXT: H     *           CARRY-IN, CARRY-OUT, VCC
TEXT: H     X1   1  2  7  5 10  9   ONEBIT
TEXT: H     X2   3  4 10  6  8  9   ONEBIT
TEXT: H     .ENDS TWOBIT
TEXT: H
TEXT: H     .SUBCKT FOURBIT 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
TEXT: H     *   NODES:  INPUT - BIT0(2) / BIT1(2) / BIT2(2) / BIT3(2),
TEXT: H     *           OUTPUT - BIT0 / BIT1 / BIT2 / BIT3, CARRY-IN, CARRY-OUT, VCC
TEXT: H     X1   1  2  3  4  9 10 13 16 15   TWOBIT
TEXT: H     X2   5  6  7  8 11 12 16 14 15   TWOBIT
TEXT: H     .ENDS FOURBIT
TEXT: H
TEXT: H     *** DEFINE NOMINAL CIRCUIT
TEXT: H     .MODEL DMOD D
TEXT: H     .MODEL QMOD NPN(BF=75 RB=100 CJE=1PF CJC=3PF)
TEXT: H     VCC   99  0   DC 5V
TEXT: H     VIN1A  1  0   PULSE(0 3 0 10NS 10NS   10NS   50NS)
TEXT: H     VIN1B  2  0   PULSE(0 3 0 10NS 10NS   20NS  100NS)
TEXT: H     VIN2A  3  0   PULSE(0 3 0 10NS 10NS   40NS  200NS)
TEXT: H     VIN2B  4  0   PULSE(0 3 0 10NS 10NS   80NS  400NS)
TEXT: H     VIN3A  5  0   PULSE(0 3 0 10NS 10NS  160NS  800NS)
TEXT: H     VIN3B  6  0   PULSE(0 3 0 10NS 10NS  320NS 1600NS)
TEXT: H     VIN4A  7  0   PULSE(0 3 0 10NS 10NS  640NS 3200NS)
TEXT: H     VIN4B  8  0   PULSE(0 3 0 10NS 10NS 1280NS 6400NS)
TEXT: H     X1     1  2  3  4  5  6  7  8  9 10 11 12  0 13 99 FOURBIT
TEXT: H     RBIT0  9  0   1K
TEXT: H     RBIT1 10  0   1K
TEXT: H     RBIT2 11  0   1K
TEXT: H     RBIT3 12  0   1K
TEXT: H     RCOUT 13  0   1K
TEXT: H
TEXT: H     *** (FOR THOSE WITH MONEY (AND MEMORY) TO BURN)
TEXT: H     .TRAN 1NS 6400NS
TEXT: H     .END
TEXT: H
TEXT: H
TEXT: H

SUBJECT: Circuit 5
TITLE: Circuit 5:  Transmission-Line Inverter
TEXT: H
TEXT: H A.5.  Circuit 5:  Transmission-Line Inverter
TEXT: H
TEXT: H
TEXT: H      The following deck simulates  a  transmission-line  in-
TEXT: H verter.   Two  transmission-line elements are required since
TEXT: H two propagation modes are excited.  In the case of a coaxial
TEXT: H line,  the  first  line (T1) models the inner conductor with
TEXT: H respect to the shield, and the second line (T2)  models  the
TEXT: H shield with respect to the outside world.
TEXT: H
TEXT: H
TEXT: H     TRANSMISSION-LINE INVERTER
TEXT: H     V1   1  0         PULSE(0 1 0 0.1N)
TEXT: H     R1   1  2         50
TEXT: H     X1   2  0  0  4   TLINE
TEXT: H     R2   4  0         50
TEXT: H
TEXT: H     .SUBCKT TLINE 1 2 3 4
TEXT: H     T1   1  2  3  4   Z0=50 TD=1.5NS
TEXT: H     T2   2  0  4  0   Z0=100 TD=1NS
TEXT: H     .ENDS TLINE
TEXT: H
TEXT: H     .TRAN 0.1NS 20NS
TEXT: H     .END
TEXT: H
TEXT: H

SUBJECT: APPENDIX B
TITLE: APPENDIX B:  MODEL AND DEVICE PARAMETERS
TEXT: H
TEXT: H B.  APPENDIX B:  MODEL AND DEVICE PARAMETERS
TEXT: H
TEXT: H      The following tables summarize the parameters available
TEXT: H on  each  of  the devices and models in  (note that for some
TEXT: H systems with  limited  memory,  output  parameters  are  not
TEXT: H available).   There are several tables for each type of dev-
TEXT: H ice supported by .  Input parameters to instances and models
TEXT: H are parameters that can occur on an instance or model defin-
TEXT: H ition line in the form "keyword=value"  where  "keyword"  is
TEXT: H the  parameter  name  as given in the tables.  Default input
TEXT: H parameters (such as the resistance  of  a  resistor  or  the
TEXT: H capacitance  of  a capacitor) obviously do not need the key-
TEXT: H word specified.
TEXT: H
TEXT: H      Output parameters are those additional parameters which
TEXT: H are  available for many types of instances for the output of
TEXT: H operating point and debugging information.  These parameters
TEXT: H are  specified  as  "@device[keyword]" and are available for
TEXT: H the most recent point computed or, if specified in a ".save"
TEXT: H statement,  for an entire simulation as a normal output vec-
TEXT: H tor.  Thus, to monitor the gate-to-source capacitance  of  a
TEXT: H MOSFET, a command
TEXT: H
TEXT: H         save @m1[cgs]
TEXT: H
TEXT: H given before a transient  simulation  causes  the  specified
TEXT: H capacitance  value to be saved at each timepoint, and a sub-
TEXT: H sequent command such as
TEXT: H
TEXT: H         plot @m1[cgs]
TEXT: H
TEXT: H produces the desired plot.  (Note that the show command does
TEXT: H not use this format).
TEXT: H
TEXT: H      Some variables are listed as both input and output, and
TEXT: H their  output  simply returns the previously input value, or
TEXT: H the default value after the simulation has been  run.   Some
TEXT: H parameter  are  input only because the output system can not
TEXT: H handle variables of the given type yet, or the need for them
TEXT: H as  output variables has not been apparent.  Many such input
TEXT: H variables are available as output variables in  a  different
TEXT: H format,  such  as  the initial condition vectors that can be
TEXT: H retrieved as individual initial condition values.   Finally,
TEXT: H internally  derived  values are output only and are provided
TEXT: H for debugging and operating point output purposes.
TEXT: H
TEXT: H      Please note  that  these  tables  do  not  provide  the
TEXT: H detailed information available about the parameters provided
TEXT: H in the section on each device and model, but are provided as
TEXT: H a quick reference guide.
SUBTOPIC: SPICE:URC
SUBTOPIC: SPICE:ASRC
SUBTOPIC: SPICE:BJT
SUBTOPIC: SPICE:BSIM1
SUBTOPIC: SPICE:BSIM2
SUBTOPIC: SPICE:Capacitor
SUBTOPIC: SPICE:CCCS
SUBTOPIC: SPICE:CCVS
SUBTOPIC: SPICE:CSwitch
SUBTOPIC: SPICE:Diode
SUBTOPIC: SPICE:Inductor
SUBTOPIC: SPICE:mutual
SUBTOPIC: SPICE:Isource
SUBTOPIC: SPICE:JFET
SUBTOPIC: SPICE:LTRA
SUBTOPIC: SPICE:MES
SUBTOPIC: SPICE:Mos1
SUBTOPIC: SPICE:Mos2
SUBTOPIC: SPICE:Mos3
SUBTOPIC: SPICE:Mos6
SUBTOPIC: SPICE:Resistor
SUBTOPIC: SPICE:Switch
SUBTOPIC: SPICE:Tranline
SUBTOPIC: SPICE:VCCS
SUBTOPIC: SPICE:VCVS
SUBTOPIC: SPICE:Vsource

SUBJECT: URC
TITLE: URC:  Uniform R.C. line
TEXT: H
TEXT: H B.1.  URC:  Uniform R.C. line
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          URC - instance parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| l                 Length of transmission line             |
TEXT: H| n                 Number of lumps                         |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          URC - instance parameters (output-only)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pos_node          Positive node of URC                    |
TEXT: H| neg_node          Negative node of URC                    |
TEXT: H| gnd               Ground node of URC                      |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|            URC - model parameters (input-only)            |
TEXT: H|-----------------------------------------------------------+
TEXT: H| urc               Uniform R.C. line model                 |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           URC - model parameters (input-output)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| k                 Propagation constant                    |
TEXT: H| fmax              Maximum frequency of interest           |
TEXT: H| rperl             Resistance per unit length              |
TEXT: H| cperl             Capacitance per unit length             |
TEXT: H| isperl            Saturation current per length           |
TEXT: H| rsperl            Diode resistance per length             |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: ASRC
TITLE: ASRC:  Arbitrary Source 
TEXT: H
TEXT: H B.2.  ASRC:  Arbitrary Source
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          ASRC - instance parameters (input-only)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| i                 Current source                          |
TEXT: H| v                 Voltage source                          |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          ASRC - instance parameters (output-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| i                 Current through source                  |
TEXT: H| v                 Voltage across source                   |
TEXT: H| pos_node          Positive Node                           |
TEXT: H| neg_node          Negative Node                           |
TEXT: H ------------------------------------------------------------

SUBJECT: BJT
TITLE: BJT:  Bipolar Junction Transistor
TEXT: H
TEXT: H B.3.  BJT:  Bipolar Junction Transistor
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           BJT - instance parameters (input-only)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ic                Initial condition vector                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          BJT - instance parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| off               Device initially off                    |
TEXT: H| icvbe             Initial B-E voltage                     |
TEXT: H| icvce             Initial C-E voltage                     |
TEXT: H| area              Area factor                             |
TEXT: H| temp              instance temperature                    |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          BJT - instance parameters (output-only)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| colnode           Number of collector node                |
TEXT: H| basenode          Number of base node                     |
TEXT: H| emitnode          Number of emitter node                  |
TEXT: H| substnode         Number of substrate node                |
TEXT: H ------------------------------------------------------------
TEXT: H| colprimenode      Internal collector node                 |
TEXT: H| baseprimenode     Internal base node                      |
TEXT: H| emitprimenode     Internal emitter node                   |
TEXT: H| ic                Current at collector node               |
TEXT: H|-----------------------------------------------------------+
TEXT: H  ib                Current at base node
TEXT: H| ie                Emitter current                         |
TEXT: H| is                Substrate current                       |
TEXT: H| vbe               B-E voltage                             |
TEXT: H ------------------------------------------------------------
TEXT: H| vbc               B-C voltage                             |
TEXT: H| gm                Small signal transconductance           |
TEXT: H| gpi               Small signal input conductance - pi     |
TEXT: H| gmu               Small signal conductance - mu           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| gx                Conductance from base to internal base  |
TEXT: H| go                Small signal output conductance         |
TEXT: H| geqcb             d(Ibe)/d(Vbc)                           |
TEXT: H| gccs              Internal C-S cap. equiv. cond.          |
TEXT: H ------------------------------------------------------------
TEXT: H| geqbx             Internal C-B-base cap. equiv. cond.     |
TEXT: H| cpi               Internal base to emitter capactance     |
TEXT: H| cmu               Internal base to collector capactiance  |
TEXT: H| cbx               Base to collector capacitance           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ccs               Collector to substrate capacitance      |
TEXT: H| cqbe              Cap. due to charge storage in B-E jct.  |
TEXT: H| cqbc              Cap. due to charge storage in B-C jct.  |
TEXT: H| cqcs              Cap. due to charge storage in C-S jct.  |
TEXT: H| cqbx              Cap. due to charge storage in B-X jct.  |
TEXT: H|                         continued                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|     BJT - instance output-only parameters - continued
TEXT: H|-----------------------------------------------------------+
TEXT: H| cexbc             Total Capacitance in B-X junction       |
TEXT: H| qbe               Charge storage B-E junction             |
TEXT: H| qbc               Charge storage B-C junction             |
TEXT: H| qcs               Charge storage C-S junction             |
TEXT: H| qbx               Charge storage B-X junction             |
TEXT: H| p                 Power dissipation                       |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           BJT - model parameters (input-output)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| npn               NPN type device                         |
TEXT: H| pnp               PNP type device                         |
TEXT: H| is                Saturation Current                      |
TEXT: H| bf                Ideal forward beta                      |
TEXT: H ------------------------------------------------------------
TEXT: H| nf                Forward emission coefficient            |
TEXT: H| vaf               Forward Early voltage                   |
TEXT: H| va                (null)                                  |
TEXT: H| ikf               Forward beta roll-off corner current    |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ik                (null)                                  |
TEXT: H| ise               B-E leakage saturation current          |
TEXT: H| ne                B-E leakage emission coefficient        |
TEXT: H| br                Ideal reverse beta                      |
TEXT: H ------------------------------------------------------------
TEXT: H| nr                Reverse emission coefficient            |
TEXT: H| var               Reverse Early voltage                   |
TEXT: H| vb                (null)                                  |
TEXT: H| ikr               reverse beta roll-off corner current    |
TEXT: H|-----------------------------------------------------------+
TEXT: H| isc               B-C leakage saturation current          |
TEXT: H| nc                B-C leakage emission coefficient        |
TEXT: H| rb                Zero bias base resistance               |
TEXT: H| irb               Current for base resistance=(rb+rbm)/2  |
TEXT: H ------------------------------------------------------------
TEXT: H| rbm               Minimum base resistance                 |
TEXT: H| re                Emitter resistance                      |
TEXT: H| rc                Collector resistance                    |
TEXT: H| cje               Zero bias B-E depletion capacitance     |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vje               B-E built in potential                  |
TEXT: H| pe                (null)                                  |
TEXT: H| mje               B-E junction grading coefficient        |
TEXT: H| me                (null)                                  |
TEXT: H ------------------------------------------------------------
TEXT: H| tf                Ideal forward transit time              |
TEXT: H| xtf               Coefficient for bias dependence of TF   |
TEXT: H| vtf               Voltage giving VBC dependence of TF     |
TEXT: H| itf               High current dependence of TF           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ptf               Excess phase                            |
TEXT: H| cjc               Zero bias B-C depletion capacitance     |
TEXT: H| vjc               B-C built in potential                  |
TEXT: H|                         continued                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|      BJT - model input-output parameters - continued
TEXT: H|-----------------------------------------------------------+
TEXT: H| pc                (null)                                  |
TEXT: H| mjc               B-C junction grading coefficient        |
TEXT: H| mc                (null)                                  |
TEXT: H| xcjc              Fraction of B-C cap to internal base    |
TEXT: H ------------------------------------------------------------
TEXT: H| tr                Ideal reverse transit time              |
TEXT: H| cjs               Zero bias C-S capacitance               |
TEXT: H| ccs               Zero bias C-S capacitance               |
TEXT: H| vjs               Substrate junction built in potential   |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ps                (null)                                  |
TEXT: H| mjs               Substrate junction grading coefficient  |
TEXT: H| ms                (null)                                  |
TEXT: H| xtb               Forward and reverse beta temp. exp.     |
TEXT: H ------------------------------------------------------------
TEXT: H| eg                Energy gap for IS temp. dependency      |
TEXT: H| xti               Temp. exponent for IS                   |
TEXT: H| fc                Forward bias junction fit parameter     |
TEXT: H| tnom              Parameter measurement temperature       |
TEXT: H| kf                Flicker Noise Coefficient               |
TEXT: H| af                Flicker Noise Exponent                  |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|            BJT - model parameters (output-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| type              NPN or PNP                              |
TEXT: H| invearlyvoltf     Inverse early voltage:forward           |
TEXT: H| invearlyvoltr     Inverse early voltage:reverse           |
TEXT: H| invrollofff       Inverse roll off - forward              |
TEXT: H ------------------------------------------------------------
TEXT: H| invrolloffr       Inverse roll off - reverse              |
TEXT: H| collectorconduct  Collector conductance                   |
TEXT: H| emitterconduct    Emitter conductance                     |
TEXT: H| transtimevbcfact  Transit time VBC factor                 |
TEXT: H| excessphasefactor Excess phase fact.                      |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: BSIM1
TITLE: BSIM1:  Berkeley Short Channel IGFET Model
TEXT: H
TEXT: H B.4.  BSIM1:  Berkeley Short Channel IGFET Model
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          BSIM1 - instance parameters (input-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ic                Vector of DS,GS,BS initial voltages     |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         BSIM1 - instance parameters (input-output)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| l                 Length                                  |
TEXT: H| w                 Width                                   |
TEXT: H| ad                Drain area                              |
TEXT: H| as                Source area                             |
TEXT: H ------------------------------------------------------------
TEXT: H| pd                Drain perimeter                         |
TEXT: H| ps                Source perimeter                        |
TEXT: H| nrd               Number of squares in drain              |
TEXT: H| nrs               Number of squares in source             |
TEXT: H|-----------------------------------------------------------+
TEXT: H| off               Device is initially off                 |
TEXT: H| vds               Initial D-S voltage                     |
TEXT: H| vgs               Initial G-S voltage                     |
TEXT: H| vbs               Initial B-S voltage                     |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           BSIM1 - model parameters (input-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| nmos              Flag to indicate NMOS                   |
TEXT: H| pmos              Flag to indicate PMOS                   |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          BSIM1 - model parameters (input-output)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vfb               Flat band voltage                       |
TEXT: H  lvfb              Length dependence of vfb
TEXT: H| wvfb              Width dependence of vfb                 |
TEXT: H| phi               Strong inversion surface potential      |
TEXT: H ------------------------------------------------------------
TEXT: H| lphi              Length dependence of phi                |
TEXT: H| wphi              Width dependence of phi                 |
TEXT: H| k1                Bulk effect coefficient 1               |
TEXT: H| lk1               Length dependence of k1                 |
TEXT: H|-----------------------------------------------------------+
TEXT: H| wk1               Width dependence of k1                  |
TEXT: H| k2                Bulk effect coefficient 2               |
TEXT: H| lk2               Length dependence of k2                 |
TEXT: H| wk2               Width dependence of k2                  |
TEXT: H ------------------------------------------------------------
TEXT: H| eta               VDS dependence of threshold voltage     |
TEXT: H| leta              Length dependence of eta                |
TEXT: H| weta              Width dependence of eta                 |
TEXT: H| x2e               VBS dependence of eta                   |
TEXT: H| lx2e              Length dependence of x2e                |
TEXT: H|                         continued                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ---------------------------------------------------------------------
TEXT: H|          BSIM1 - model input-output parameters - continued|
TEXT: H|--------------------------------------------------------------------+
TEXT: H|wx2e           Width dependence of x2e                              |
TEXT: H|x3e            VDS dependence of eta                                |
TEXT: H|lx3e           Length dependence of x3e                             |
TEXT: H|wx3e           Width dependence of x3e                              |
TEXT: H ---------------------------------------------------------------------
TEXT: H|dl             Channel length reduction in um                       |
TEXT: H|dw             Channel width reduction in um                        |
TEXT: H|muz            Zero field mobility at VDS=0 VGS=VTH                 |
TEXT: H|x2mz           VBS dependence of muz                                |
TEXT: H|--------------------------------------------------------------------+
TEXT: H|lx2mz          Length dependence of x2mz                            |
TEXT: H|wx2mz          Width dependence of x2mz                             |
TEXT: H mus            Mobility at VDS=VDD VGS=VTH, channel length modulation
TEXT: H|lmus           Length dependence of mus                             |
TEXT: H ---------------------------------------------------------------------
TEXT: H|wmus           Width dependence of mus                              |
TEXT: H|x2ms           VBS dependence of mus                                |
TEXT: H|lx2ms          Length dependence of x2ms                            |
TEXT: H|wx2ms          Width dependence of x2ms                             |
TEXT: H|--------------------------------------------------------------------+
TEXT: H|x3ms           VDS dependence of mus                                |
TEXT: H|lx3ms          Length dependence of x3ms                            |
TEXT: H|wx3ms          Width dependence of x3ms                             |
TEXT: H|u0             VGS dependence of mobility                           |
TEXT: H ---------------------------------------------------------------------
TEXT: H|lu0            Length dependence of u0                              |
TEXT: H|wu0            Width dependence of u0                               |
TEXT: H|x2u0           VBS dependence of u0                                 |
TEXT: H|lx2u0          Length dependence of x2u0                            |
TEXT: H|--------------------------------------------------------------------+
TEXT: H|wx2u0          Width dependence of x2u0                             |
TEXT: H|u1             VDS depence of mobility, velocity saturation         |
TEXT: H|lu1            Length dependence of u1                              |
TEXT: H|wu1            Width dependence of u1                               |
TEXT: H ---------------------------------------------------------------------
TEXT: H|x2u1           VBS depence of u1                                    |
TEXT: H|lx2u1          Length depence of x2u1                               |
TEXT: H|wx2u1          Width depence of x2u1                                |
TEXT: H|x3u1           VDS depence of u1                                    |
TEXT: H|--------------------------------------------------------------------+
TEXT: H|lx3u1          Length dependence of x3u1                            |
TEXT: H|wx3u1          Width depence of x3u1                                |
TEXT: H|n0             Subthreshold slope                                   |
TEXT: H ln0            Length dependence of n0
TEXT: H ---------------------------------------------------------------------
TEXT: H|wn0            Width dependence of n0                               |
TEXT: H|nb             VBS dependence of subthreshold slope                 |
TEXT: H|lnb            Length dependence of nb                              |
TEXT: H|wnb            Width dependence of nb                               |
TEXT: H|--------------------------------------------------------------------+
TEXT: H|nd             VDS dependence of subthreshold slope                 |
TEXT: H|lnd            Length dependence of nd                              |
TEXT: H|wnd            Width dependence of nd                               |
TEXT: H|                              continued                    |
TEXT: H ---------------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ---------------------------------------------------------------------------
TEXT: H|             BSIM1 - model input-output parameters - continued   |
TEXT: H|--------------------------------------------------------------------------+
TEXT: H|tox            Gate oxide thickness in um                                 |
TEXT: H|temp           Temperature in degree Celcius                              |
TEXT: H|vdd            Supply voltage to specify mus                              |
TEXT: H|cgso           Gate source overlap capacitance per unit channel width(m)  |
TEXT: H ---------------------------------------------------------------------------
TEXT: H|cgdo           Gate drain overlap capacitance per unit channel width(m)   |
TEXT: H|cgbo           Gate bulk overlap capacitance per unit channel length(m)   |
TEXT: H|xpart          Flag for channel charge partitioning                       |
TEXT: H|rsh            Source drain diffusion sheet resistance in ohm per square  |
TEXT: H|--------------------------------------------------------------------------+
TEXT: H|js             Source drain junction saturation current per unit area     |
TEXT: H|pb             Source drain junction built in potential                   |
TEXT: H mj             Source drain bottom junction capacitance grading coefficient
TEXT: H|pbsw           Source drain side junction capacitance built in potential  |
TEXT: H ---------------------------------------------------------------------------
TEXT: H|mjsw           Source drain side junction capacitance grading coefficient |
TEXT: H|cj             Source drain bottom junction capacitance per unit area     |
TEXT: H|cjsw           Source drain side junction capacitance per unit area       |
TEXT: H|wdf            Default width of source drain diffusion in um              |
TEXT: H|dell           Length reduction of source drain diffusion                 |
TEXT: H ---------------------------------------------------------------------------
TEXT: H

SUBJECT: BSIM2
TITLE: BSIM2:  Berkeley Short Channel IGFET Model
TEXT: H
TEXT: H B.5.  BSIM2:  Berkeley Short Channel IGFET Model
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          BSIM2 - instance parameters (input-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ic                Vector of DS,GS,BS initial voltages     |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         BSIM2 - instance parameters (input-output)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| l                 Length                                  |
TEXT: H| w                 Width                                   |
TEXT: H| ad                Drain area                              |
TEXT: H| as                Source area                             |
TEXT: H ------------------------------------------------------------
TEXT: H| pd                Drain perimeter                         |
TEXT: H| ps                Source perimeter                        |
TEXT: H| nrd               Number of squares in drain              |
TEXT: H| nrs               Number of squares in source             |
TEXT: H|-----------------------------------------------------------+
TEXT: H| off               Device is initially off                 |
TEXT: H| vds               Initial D-S voltage                     |
TEXT: H| vgs               Initial G-S voltage                     |
TEXT: H| vbs               Initial B-S voltage                     |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           BSIM2 - model parameters (input-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| nmos              Flag to indicate NMOS                   |
TEXT: H| pmos              Flag to indicate PMOS                   |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          BSIM2 - model parameters (input-output)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H|vfb             Flat band voltage                          |
TEXT: H|lvfb            Length dependence of vfb                   |
TEXT: H|wvfb            Width dependence of vfb                    |
TEXT: H|phi             Strong inversion surface potential         |
TEXT: H ------------------------------------------------------------
TEXT: H|lphi            Length dependence of phi                   |
TEXT: H|wphi            Width dependence of phi                    |
TEXT: H|k1              Bulk effect coefficient 1                  |
TEXT: H|lk1             Length dependence of k1                    |
TEXT: H|-----------------------------------------------------------+
TEXT: H|wk1             Width dependence of k1                     |
TEXT: H|k2              Bulk effect coefficient 2                  |
TEXT: H|lk2             Length dependence of k2                    |
TEXT: H|wk2             Width dependence of k2                     |
TEXT: H ------------------------------------------------------------
TEXT: H|eta0            VDS dependence of threshold voltage at VDD=0
TEXT: H|leta0           Length dependence of eta0                  |
TEXT: H|weta0           Width dependence of eta0                   |
TEXT: H|etab            VBS dependence of eta                      |
TEXT: H|-----------------------------------------------------------+
TEXT: H|letab           Length dependence of etab                  |
TEXT: H|wetab           Width dependence of etab                   |
TEXT: H|dl              Channel length reduction in um             |
TEXT: H|dw              Channel width reduction in um              |
TEXT: H ------------------------------------------------------------
TEXT: H|mu0             Low-field mobility, at VDS=0 VGS=VTH       |
TEXT: H|mu0b            VBS dependence of low-field mobility       |
TEXT: H|lmu0b           Length dependence of mu0b                  |
TEXT: H|wmu0b           Width dependence of mu0b                   |
TEXT: H|-----------------------------------------------------------+
TEXT: H|mus0            Mobility at VDS=VDD VGS=VTH                |
TEXT: H|lmus0           Length dependence of mus0                  |
TEXT: H|wmus0           Width dependence of mus                    |
TEXT: H|musb            VBS dependence of mus                      |
TEXT: H ------------------------------------------------------------
TEXT: H|lmusb           Length dependence of musb                  |
TEXT: H|wmusb           Width dependence of musb                   |
TEXT: H|mu20            VDS dependence of mu in tanh term          |
TEXT: H|lmu20           Length dependence of mu20                  |
TEXT: H|-----------------------------------------------------------+
TEXT: H|wmu20           Width dependence of mu20                   |
TEXT: H|mu2b            VBS dependence of mu2                      |
TEXT: H|lmu2b           Length dependence of mu2b                  |
TEXT: H|wmu2b           Width dependence of mu2b                   |
TEXT: H ------------------------------------------------------------
TEXT: H|mu2g            VGS dependence of mu2                      |
TEXT: H|                         continued                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|     BSIM2 - model input-output parameters - continued
TEXT: H|-----------------------------------------------------------+
TEXT: H| lmu2g             Length dependence of mu2g               |
TEXT: H| wmu2g             Width dependence of mu2g                |
TEXT: H| mu30              VDS dependence of mu in linear term     |
TEXT: H| lmu30             Length dependence of mu30               |
TEXT: H ------------------------------------------------------------
TEXT: H| wmu30             Width dependence of mu30                |
TEXT: H| mu3b              VBS dependence of mu3                   |
TEXT: H| lmu3b             Length dependence of mu3b               |
TEXT: H| wmu3b             Width dependence of mu3b                |
TEXT: H|-----------------------------------------------------------+
TEXT: H| mu3g              VGS dependence of mu3                   |
TEXT: H| lmu3g             Length dependence of mu3g               |
TEXT: H| wmu3g             Width dependence of mu3g                |
TEXT: H| mu40              VDS dependence of mu in linear term     |
TEXT: H ------------------------------------------------------------
TEXT: H| lmu40             Length dependence of mu40               |
TEXT: H| wmu40             Width dependence of mu40                |
TEXT: H| mu4b              VBS dependence of mu4                   |
TEXT: H| lmu4b             Length dependence of mu4b               |
TEXT: H|-----------------------------------------------------------+
TEXT: H| wmu4b             Width dependence of mu4b                |
TEXT: H| mu4g              VGS dependence of mu4                   |
TEXT: H| lmu4g             Length dependence of mu4g               |
TEXT: H| wmu4g             Width dependence of mu4g                |
TEXT: H ------------------------------------------------------------
TEXT: H| ua0               Linear VGS dependence of mobility       |
TEXT: H| lua0              Length dependence of ua0                |
TEXT: H| wua0              Width dependence of ua0                 |
TEXT: H| uab               VBS dependence of ua                    |
TEXT: H|-----------------------------------------------------------+
TEXT: H| luab              Length dependence of uab                |
TEXT: H| wuab              Width dependence of uab                 |
TEXT: H| ub0               Quadratic VGS dependence of mobility    |
TEXT: H| lub0              Length dependence of ub0                |
TEXT: H ------------------------------------------------------------
TEXT: H| wub0              Width dependence of ub0                 |
TEXT: H| ubb               VBS dependence of ub                    |
TEXT: H| lubb              Length dependence of ubb                |
TEXT: H| wubb              Width dependence of ubb                 |
TEXT: H|-----------------------------------------------------------+
TEXT: H| u10               VDS depence of mobility                 |
TEXT: H| lu10              Length dependence of u10                |
TEXT: H  wu10              Width dependence of u10
TEXT: H| u1b               VBS depence of u1                       |
TEXT: H ------------------------------------------------------------
TEXT: H| lu1b              Length depence of u1b                   |
TEXT: H| wu1b              Width depence of u1b                    |
TEXT: H| u1d               VDS depence of u1                       |
TEXT: H| lu1d              Length depence of u1d                   |
TEXT: H|-----------------------------------------------------------+
TEXT: H| wu1d              Width depence of u1d                    |
TEXT: H| n0                Subthreshold slope at VDS=0 VBS=0       |
TEXT: H| ln0               Length dependence of n0                 |
TEXT: H|                         continued                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------------------
TEXT: H|           BSIM2 - model input-output parameters - continued  |
TEXT: H|-----------------------------------------------------------------------+
TEXT: H|wn0            Width dependence of n0                                  |
TEXT: H|nb             VBS dependence of n                                     |
TEXT: H|lnb            Length dependence of nb                                 |
TEXT: H|wnb            Width dependence of nb                                  |
TEXT: H ------------------------------------------------------------------------
TEXT: H|nd             VDS dependence of n                                     |
TEXT: H|lnd            Length dependence of nd                                 |
TEXT: H|wnd            Width dependence of nd                                  |
TEXT: H|vof0           Threshold voltage offset AT VDS=0 VBS=0                 |
TEXT: H|-----------------------------------------------------------------------+
TEXT: H|lvof0          Length dependence of vof0                               |
TEXT: H|wvof0          Width dependence of vof0                                |
TEXT: H|vofb           VBS dependence of vof                                   |
TEXT: H|lvofb          Length dependence of vofb                               |
TEXT: H ------------------------------------------------------------------------
TEXT: H|wvofb          Width dependence of vofb                                |
TEXT: H|vofd           VDS dependence of vof                                   |
TEXT: H|lvofd          Length dependence of vofd                               |
TEXT: H|wvofd          Width dependence of vofd                                |
TEXT: H|-----------------------------------------------------------------------+
TEXT: H|ai0            Pre-factor of hot-electron effect.                      |
TEXT: H|lai0           Length dependence of ai0                                |
TEXT: H|wai0           Width dependence of ai0                                 |
TEXT: H|aib            VBS dependence of ai                                    |
TEXT: H ------------------------------------------------------------------------
TEXT: H|laib           Length dependence of aib                                |
TEXT: H|waib           Width dependence of aib                                 |
TEXT: H|bi0            Exponential factor of hot-electron effect.              |
TEXT: H|lbi0           Length dependence of bi0                                |
TEXT: H|-----------------------------------------------------------------------+
TEXT: H|wbi0           Width dependence of bi0                                 |
TEXT: H|bib            VBS dependence of bi                                    |
TEXT: H|lbib           Length dependence of bib                                |
TEXT: H|wbib           Width dependence of bib                                 |
TEXT: H ------------------------------------------------------------------------
TEXT: H|vghigh         Upper bound of the cubic spline function.               |
TEXT: H|lvghigh        Length dependence of vghigh                             |
TEXT: H|wvghigh        Width dependence of vghigh                              |
TEXT: H|vglow          Lower bound of the cubic spline function.               |
TEXT: H|-----------------------------------------------------------------------+
TEXT: H|lvglow         Length dependence of vglow                              |
TEXT: H|wvglow         Width dependence of vglow                               |
TEXT: H|tox            Gate oxide thickness in um                              |
TEXT: H|temp           Temperature in degree Celcius                           |
TEXT: H ------------------------------------------------------------------------
TEXT: H|vdd            Maximum Vds                                             |
TEXT: H|vgg            Maximum Vgs                                             |
TEXT: H|vbb            Maximum Vbs                                             |
TEXT: H|cgso           Gate source overlap capacitance per unit channel width(m)
TEXT: H|-----------------------------------------------------------------------+
TEXT: H|cgdo           Gate drain overlap capacitance per unit channel width(m)|
TEXT: H|cgbo           Gate bulk overlap capacitance per unit channel length(m)|
TEXT: H|xpart          Flag for channel charge partitioning                    |
TEXT: H|                               continued                      |
TEXT: H ------------------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ---------------------------------------------------------------------------
TEXT: H|             BSIM2 - model input-output parameters - continued   |
TEXT: H|--------------------------------------------------------------------------+
TEXT: H|rsh            Source drain diffusion sheet resistance in ohm per square  |
TEXT: H|js             Source drain junction saturation current per unit area     |
TEXT: H|pb             Source drain junction built in potential                   |
TEXT: H mj             Source drain bottom junction capacitance grading coefficient
TEXT: H|                                                                          |
TEXT: H ---------------------------------------------------------------------------
TEXT: H|pbsw           Source drain side junction capacitance built in potential  |
TEXT: H|mjsw           Source drain side junction capacitance grading coefficient |
TEXT: H|cj             Source drain bottom junction capacitance per unit area     |
TEXT: H|cjsw           Source drain side junction capacitance per unit area       |
TEXT: H|wdf            Default width of source drain diffusion in um              |
TEXT: H|dell           Length reduction of source drain diffusion                 |
TEXT: H ---------------------------------------------------------------------------
TEXT: H

SUBJECT: Capacitor
TITLE: Capacitor:  Fixed capacitor
TEXT: H
TEXT: H B.6.  Capacitor:  Fixed capacitor
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|       Capacitor - instance parameters (input-output)      |
TEXT: H|-----------------------------------------------------------+
TEXT: H| capacitance       Device capacitance                      |
TEXT: H| ic                Initial capacitor voltage               |
TEXT: H| w                 Device width                            |
TEXT: H| l                 Device length                           |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|       Capacitor - instance parameters (output-only)       |
TEXT: H|-----------------------------------------------------------+
TEXT: H| i                 Device current                          |
TEXT: H| p                 Instantaneous device power              |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         Capacitor - model parameters (input-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| c                 Capacitor model                         |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|        Capacitor - model parameters (input-output)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| cj                Bottom Capacitance per area             |
TEXT: H| cjsw              Sidewall capacitance per meter          |
TEXT: H| defw              Default width                           |
TEXT: H| narrow            width correction factor                 |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: CCCS
TITLE: CCCS:  Current controlled current source
TEXT: H
TEXT: H B.7.  CCCS:  Current controlled current source
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         CCCS - instance parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| gain              Gain of source                          |
TEXT: H| control           Name of controlling source              |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          CCCS - instance parameters (output-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| neg_node          Negative node of source                 |
TEXT: H| pos_node          Positive node of source                 |
TEXT: H| i                 CCCS output current                     |
TEXT: H| v                 CCCS voltage at output                  |
TEXT: H| p                 CCCS power                              |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: CCVS
TITLE: CCVS:  Linear current controlled current source
TEXT: H
TEXT: H B.8.  CCVS:  Linear current controlled current source
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         CCVS - instance parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| gain              Transresistance (gain)                  |
TEXT: H| control           Controlling voltage source              |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          CCVS - instance parameters (output-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pos_node          Positive node of source                 |
TEXT: H| neg_node          Negative node of source                 |
TEXT: H| i                 CCVS output current                     |
TEXT: H| v                 CCVS output voltage                     |
TEXT: H| p                 CCVS power                              |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: CSwitch
TITLE: CSwitch:  Current controlled ideal switch
TEXT: H
TEXT: H B.9.  CSwitch:  Current controlled ideal switch
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         CSwitch - instance parameters (input-only)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| on                Initially closed                        |
TEXT: H| off               Initially open                          |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|        CSwitch - instance parameters (input-output)       |
TEXT: H|-----------------------------------------------------------+
TEXT: H| control           Name of controlling source              |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|        CSwitch - instance parameters (output-only)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pos_node          Positive node of switch                 |
TEXT: H| neg_node          Negative node of switch                 |
TEXT: H| i                 Switch current                          |
TEXT: H| p                 Instantaneous power                     |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         CSwitch - model parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| csw               Current controlled switch model         |
TEXT: H| it                Threshold current                       |
TEXT: H| ih                Hysterisis current                      |
TEXT: H| ron               Closed resistance                       |
TEXT: H| roff              Open resistance                         |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          CSwitch - model parameters (output-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| gon               Closed conductance                      |
TEXT: H| goff              Open conductance                        |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: Diode
TITLE: Diode:  Junction Diode model
TEXT: H
TEXT: H B.10.  Diode:  Junction Diode model
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         Diode - instance parameters (input-output)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| off               Initially off                           |
TEXT: H| temp              Instance temperature                    |
TEXT: H| ic                Initial device voltage                  |
TEXT: H| area              Area factor                             |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         Diode - instance parameters (output-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vd                Diode voltage                           |
TEXT: H| id                Diode current                           |
TEXT: H| c                 Diode current                           |
TEXT: H| gd                Diode conductance                       |
TEXT: H ------------------------------------------------------------
TEXT: H| cd                Diode capacitance                       |
TEXT: H| charge            Diode capacitor charge                  |
TEXT: H| capcur            Diode capacitor current                 |
TEXT: H| p                 Diode power                             |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           Diode - model parameters (input-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| d                 Diode model                             |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          Diode - model parameters (input-output)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| is                Saturation current                      |
TEXT: H| tnom              Parameter measurement temperature       |
TEXT: H| rs                Ohmic resistance                        |
TEXT: H| n                 Emission Coefficient                    |
TEXT: H ------------------------------------------------------------
TEXT: H| tt                Transit Time                            |
TEXT: H| cjo               Junction capacitance                    |
TEXT: H| cj0               (null)                                  |
TEXT: H| vj                Junction potential                      |
TEXT: H|-----------------------------------------------------------+
TEXT: H| m                 Grading coefficient                     |
TEXT: H| eg                Activation energy                       |
TEXT: H| xti               Saturation current temperature exp.     |
TEXT: H| kf                flicker noise coefficient               |
TEXT: H ------------------------------------------------------------
TEXT: H| af                flicker noise exponent                  |
TEXT: H| fc                Forward bias junction fit parameter     |
TEXT: H| bv                Reverse breakdown voltage               |
TEXT: H| ibv               Current at reverse breakdown voltage    |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           Diode - model parameters (output-only)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| cond              Ohmic conductance                       |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: Inductor
TITLE: Inductor:  Inductors
TEXT: H
TEXT: H B.11.  Inductor:  Inductors
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|       Inductor - instance parameters (input-output)       |
TEXT: H|-----------------------------------------------------------+
TEXT: H| inductance        Inductance of inductor                  |
TEXT: H| ic                Initial current through inductor        |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H -------------------------------------------------------------
TEXT: H|        Inductor - instance parameters (output-only)        |
TEXT: H|------------------------------------------------------------+
TEXT: H|flux           Flux through inductor                        |
TEXT: H|v              Terminal voltage of inductor                 |
TEXT: H|volt                                                        |
TEXT: H|i              Current through the inductor                 |
TEXT: H|current                                                     |
TEXT: H p              instantaneous power dissipated by the inductor
TEXT: H|                                                            |
TEXT: H -------------------------------------------------------------
TEXT: H

SUBJECT: mutual
TITLE: mutual:  Mutual inductors
TEXT: H
TEXT: H B.12.  mutual:  Mutual inductors
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|        mutual - instance parameters (input-output)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| k                 Mutual inductance                       |
TEXT: H| coefficient       (null)                                  |
TEXT: H| inductor1         First coupled inductor                  |
TEXT: H| inductor2         Second coupled inductor                 |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: Isource
TITLE: Isource:  Independent current source
TEXT: H
TEXT: H B.13.  Isource:  Independent current source
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         Isource - instance parameters (input-only)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pulse             Pulse description                       |
TEXT: H| sine              Sinusoidal source description           |
TEXT: H| sin               Sinusoidal source description           |
TEXT: H| exp               Exponential source description          |
TEXT: H ------------------------------------------------------------
TEXT: H| pwl               Piecewise linear description            |
TEXT: H| sffm              single freq. FM description             |
TEXT: H| ac                AC magnitude,phase vector               |
TEXT: H| c                 Current through current source          |
TEXT: H| distof1           f1 input for distortion                 |
TEXT: H| distof2           f2 input for distortion                 |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|        Isource - instance parameters (input-output)       |
TEXT: H|-----------------------------------------------------------+
TEXT: H| dc                DC value of source                      |
TEXT: H| acmag             AC magnitude                            |
TEXT: H| acphase           AC phase                                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|        Isource - instance parameters (output-only)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| neg_node          Negative node of source                 |
TEXT: H| pos_node          Positive node of source                 |
TEXT: H  acreal            AC real part
TEXT: H| acimag            AC imaginary part                       |
TEXT: H ------------------------------------------------------------
TEXT: H| function          Function of the source                  |
TEXT: H| order             Order of the source function            |
TEXT: H| coeffs            Coefficients of the source              |
TEXT: H| v                 Voltage across the supply               |
TEXT: H| p                 Power supplied by the source            |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: JFET
TITLE: JFET:  Junction Field effect transistor
TEXT: H
TEXT: H B.14.  JFET:  Junction Field effect transistor
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         JFET - instance parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| off               Device initially off                    |
TEXT: H| ic                Initial VDS,VGS vector                  |
TEXT: H| area              Area factor                             |
TEXT: H| ic-vds            Initial D-S voltage                     |
TEXT: H| ic-vgs            Initial G-S volrage                     |
TEXT: H| temp              Instance temperature                    |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ---------------------------------------------------------------
TEXT: H|           JFET - instance parameters (output-only)           |
TEXT: H|--------------------------------------------------------------+
TEXT: H|drain-node       Number of drain node                         |
TEXT: H|gate-node        Number of gate node                          |
TEXT: H|source-node      Number of source node                        |
TEXT: H|drain-prime-node Internal drain node                          |
TEXT: H ---------------------------------------------------------------
TEXT: H|source-prime-nodeInternal source node                         |
TEXT: H|vgs              Voltage G-S                                  |
TEXT: H|vgd              Voltage G-D                                  |
TEXT: H|ig               Current at gate node                         |
TEXT: H|--------------------------------------------------------------+
TEXT: H|id               Current at drain node                        |
TEXT: H|is               Source current                               |
TEXT: H|igd              Current G-D                                  |
TEXT: H|gm               Transconductance                             |
TEXT: H ---------------------------------------------------------------
TEXT: H|gds              Conductance D-S                              |
TEXT: H|ggs              Conductance G-S                              |
TEXT: H|ggd              Conductance G-D                              |
TEXT: H|qgs              Charge storage G-S junction                  |
TEXT: H|--------------------------------------------------------------+
TEXT: H|qgd              Charge storage G-D junction                  |
TEXT: H cqgs             Capacitance due to charge storage G-S junction
TEXT: H|                                                              |
TEXT: H cqgd             Capacitance due to charge storage G-D junction
TEXT: H|p                Power dissipated by the JFET                 |
TEXT: H ---------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           JFET - model parameters (input-output)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| njf               N type JFET model                       |
TEXT: H| pjf               P type JFET model                       |
TEXT: H| vt0               Threshold voltage                       |
TEXT: H| vto               (null)                                  |
TEXT: H ------------------------------------------------------------
TEXT: H| beta              Transconductance parameter              |
TEXT: H| lambda            Channel length modulation param.        |
TEXT: H| rd                Drain ohmic resistance                  |
TEXT: H| rs                Source ohmic resistance                 |
TEXT: H| cgs               G-S junction capactance                 |
TEXT: H|                         continued                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|      JFET - model input-output parameters - continued
TEXT: H|-----------------------------------------------------------+
TEXT: H| cgd               G-D junction cap                        |
TEXT: H| pb                Gate junction potential                 |
TEXT: H| is                Gate junction saturation current        |
TEXT: H| fc                Forward bias junction fit parm.         |
TEXT: H ------------------------------------------------------------
TEXT: H| b                 Doping tail parameter                   |
TEXT: H| tnom              parameter measurement temperature       |
TEXT: H| kf                Flicker Noise Coefficient               |
TEXT: H| af                Flicker Noise Exponent                  |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           JFET - model parameters (output-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| type              N-type or P-type JFET model             |
TEXT: H| gd                Drain conductance                       |
TEXT: H| gs                Source conductance                      |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: LTRA
TITLE: LTRA:  Lossy transmission line
TEXT: H
TEXT: H B.15.  LTRA:  Lossy transmission line
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          LTRA - instance parameters (input-only)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ic                Initial condition vector:v1,i1,v2,i2    |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H|         LTRA - instance parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| v1                Initial voltage at end 1                |
TEXT: H| v2                Initial voltage at end 2                |
TEXT: H| i1                Initial current at end 1                |
TEXT: H| i2                Initial current at end 2                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          LTRA - instance parameters (output-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pos_node1         Positive node of end 1 of t-line        |
TEXT: H| neg_node1         Negative node of end 1 of t.line        |
TEXT: H| pos_node2         Positive node of end 2 of t-line        |
TEXT: H| neg_node2         Negative node of end 2 of t-line        |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           LTRA - model parameters (input-output)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H|ltra            LTRA model                                 |
TEXT: H|r               Resistance per metre                       |
TEXT: H|l               Inductance per metre                       |
TEXT: H|g               (null)                                     |
TEXT: H ------------------------------------------------------------
TEXT: H|c               Capacitance per metre                      |
TEXT: H|len             length of line                             |
TEXT: H|nocontrol       No timestep control                        |
TEXT: H|steplimit       always limit timestep to 0.8*(delay of line)
TEXT: H|                         continued                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H -----------------------------------------------------------------------------------
TEXT: H|                 LTRA - model input-output parameters - continued        |
TEXT: H|----------------------------------------------------------------------------------+
TEXT: H|nosteplimit    don't always limit timestep to 0.8*(delay of line)                 |
TEXT: H|lininterp      use linear interpolation                                           |
TEXT: H|quadinterp     use quadratic interpolation                                        |
TEXT: H|mixedinterp    use linear interpolation if quadratic results look unacceptable    |
TEXT: H -----------------------------------------------------------------------------------
TEXT: H|truncnr        use N-R iterations for step calculation in LTRAtrunc               |
TEXT: H|truncdontcut   don't limit timestep to keep impulse response calculation errors low
TEXT: H|compactrel     special reltol for straight line checking                          |
TEXT: H|compactabs     special abstol for straight line checking                          |
TEXT: H -----------------------------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           LTRA - model parameters (output-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| rel               Rel. rate of change of deriv. for bkpt  |
TEXT: H| abs               Abs. rate of change of deriv. for bkpt  |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: MES
TITLE: MES:  GaAs MESFET model
TEXT: H
TEXT: H B.16.  MES:  GaAs MESFET model
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          MES - instance parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| area              Area factor                             |
TEXT: H| icvds             Initial D-S voltage                     |
TEXT: H| icvgs             Initial G-S voltage                     |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          MES - instance parameters (output-only)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H|off            Device initially off                        |
TEXT: H|dnode          Number of drain node                        |
TEXT: H|gnode          Number of gate node                         |
TEXT: H|snode          Number of source node                       |
TEXT: H ------------------------------------------------------------
TEXT: H|dprimenode     Number of internal drain node               |
TEXT: H|sprimenode     Number of internal source node              |
TEXT: H|vgs            Gate-Source voltage                         |
TEXT: H|vgd            Gate-Drain voltage                          |
TEXT: H|-----------------------------------------------------------+
TEXT: H|cg             Gate capacitance                            |
TEXT: H|cd             Drain capacitance                           |
TEXT: H|cgd            Gate-Drain capacitance                      |
TEXT: H|gm             Transconductance                            |
TEXT: H ------------------------------------------------------------
TEXT: H|gds            Drain-Source conductance                    |
TEXT: H|ggs            Gate-Source conductance                     |
TEXT: H|ggd            Gate-Drain conductance                      |
TEXT: H|cqgs           Capacitance due to gate-source charge storage
TEXT: H|-----------------------------------------------------------+
TEXT: H|cqgd           Capacitance due to gate-drain charge storage|
TEXT: H|qgs            Gate-Source charge storage                  |
TEXT: H|qgd            Gate-Drain charge storage                   |
TEXT: H|is             Source current                              |
TEXT: H|                         continued                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|     MES - instance output-only parameters - continued
TEXT: H|-----------------------------------------------------------+
TEXT: H| p                 Power dissipated by the mesfet          |
TEXT: H ------------------------------------------------------------
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|            MES - model parameters (input-only)            |
TEXT: H|-----------------------------------------------------------+
TEXT: H| nmf               N type MESfet model                     |
TEXT: H| pmf               P type MESfet model                     |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           MES - model parameters (input-output)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vt0               Pinch-off voltage                       |
TEXT: H| vto               (null)                                  |
TEXT: H| alpha             Saturation voltage parameter            |
TEXT: H| beta              Transconductance parameter              |
TEXT: H ------------------------------------------------------------
TEXT: H| lambda            Channel length modulation parm.         |
TEXT: H| b                 Doping tail extending parameter         |
TEXT: H| rd                Drain ohmic resistance                  |
TEXT: H| rs                Source ohmic resistance                 |
TEXT: H|-----------------------------------------------------------+
TEXT: H| cgs               G-S junction capacitance                |
TEXT: H| cgd               G-D junction capacitance                |
TEXT: H| pb                Gate junction potential                 |
TEXT: H| is                Junction saturation current             |
TEXT: H ------------------------------------------------------------
TEXT: H| fc                Forward bias junction fit parm.         |
TEXT: H| kf                Flicker noise coefficient               |
TEXT: H| af                Flicker noise exponent                  |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|            MES - model parameters (output-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| type              N-type or P-type MESfet model           |
TEXT: H| gd                Drain conductance                       |
TEXT: H| gs                Source conductance                      |
TEXT: H| depl_cap          Depletion capacitance                   |
TEXT: H| vcrit             Critical voltage                        |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: Mos1
TITLE: Mos1:  Level 1 MOSfet model with Meyer capacitance model
TEXT: H
TEXT: H B.17.  Mos1:  Level 1 MOSfet model  with  Meyer  capacitance
TEXT: H model
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          Mos1 - instance parameters (input-only)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| off               Device initially off                    |
TEXT: H| ic                Vector of D-S, G-S, B-S voltages        |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         Mos1 - instance parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| l                 Length                                  |
TEXT: H| w                 Width                                   |
TEXT: H| ad                Drain area                              |
TEXT: H| as                Source area                             |
TEXT: H ------------------------------------------------------------
TEXT: H| pd                Drain perimeter                         |
TEXT: H| ps                Source perimeter                        |
TEXT: H| nrd               Drain squares                           |
TEXT: H| nrs               Source squares                          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| icvds             Initial D-S voltage                     |
TEXT: H| icvgs             Initial G-S voltage                     |
TEXT: H| icvbs             Initial B-S voltage                     |
TEXT: H| temp              Instance temperature                    |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          Mos1 - instance parameters (output-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| id                Drain current                           |
TEXT: H| is                Source current                          |
TEXT: H| ig                Gate current                            |
TEXT: H| ib                Bulk current                            |
TEXT: H ------------------------------------------------------------
TEXT: H| ibd               B-D junction current                    |
TEXT: H| ibs               B-S junction current                    |
TEXT: H| vgs               Gate-Source voltage                     |
TEXT: H| vds               Drain-Source voltage                    |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vbs               Bulk-Source voltage                     |
TEXT: H| vbd               Bulk-Drain voltage                      |
TEXT: H| dnode             Number of the drain node                |
TEXT: H| gnode             Number of the gate node                 |
TEXT: H ------------------------------------------------------------
TEXT: H| snode             Number of the source node               |
TEXT: H| bnode             Number of the node                      |
TEXT: H| dnodeprime        Number of int. drain node               |
TEXT: H| snodeprime        Number of int. source node              |
TEXT: H|-----------------------------------------------------------+
TEXT: H| von                                                       |
TEXT: H| vdsat             Saturation drain voltage                |
TEXT: H| sourcevcrit       Critical source voltage                 |
TEXT: H| drainvcrit        Critical drain voltage                  |
TEXT: H| rs                Source resistance                       |
TEXT: H|                         continued                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H --------------------------------------------------------------
TEXT: H|      Mos1 - instance output-only parameters - continued
TEXT: H|-------------------------------------------------------------+
TEXT: H|sourceconductanceConductance of source                       |
TEXT: H|rd               Drain conductance                           |
TEXT: H|drainconductance Conductance of drain                        |
TEXT: H|gm               Transconductance                            |
TEXT: H --------------------------------------------------------------
TEXT: H|gds              Drain-Source conductance                    |
TEXT: H|gmb              Bulk-Source transconductance                |
TEXT: H|gmbs                                                         |
TEXT: H|gbd              Bulk-Drain conductance                      |
TEXT: H|-------------------------------------------------------------+
TEXT: H|gbs              Bulk-Source conductance                     |
TEXT: H|cbd              Bulk-Drain capacitance                      |
TEXT: H|cbs              Bulk-Source capacitance                     |
TEXT: H|cgs              Gate-Source capacitance                     |
TEXT: H --------------------------------------------------------------
TEXT: H|cgd              Gate-Drain capacitance                      |
TEXT: H|cgb              Gate-Bulk capacitance                       |
TEXT: H|cqgs             Capacitance due to gate-source charge storage
TEXT: H|cqgd             Capacitance due to gate-drain charge storage|
TEXT: H|-------------------------------------------------------------+
TEXT: H|cqgb             Capacitance due to gate-bulk charge storage |
TEXT: H|cqbd             Capacitance due to bulk-drain charge storage|
TEXT: H cqbs             Capacitance due to bulk-source charge storage
TEXT: H|cbd0             Zero-Bias B-D junction capacitance          |
TEXT: H --------------------------------------------------------------
TEXT: H|cbdsw0                                                       |
TEXT: H|cbs0             Zero-Bias B-S junction capacitance          |
TEXT: H|cbssw0                                                       |
TEXT: H|qgs              Gate-Source charge storage                  |
TEXT: H|-------------------------------------------------------------+
TEXT: H|qgd              Gate-Drain charge storage                   |
TEXT: H|qgb              Gate-Bulk charge storage                    |
TEXT: H|qbd              Bulk-Drain charge storage                   |
TEXT: H|qbs              Bulk-Source charge storage                  |
TEXT: H|p                Instaneous power                            |
TEXT: H --------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|            Mos1 - model parameters (input-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| nmos              N type MOSfet model                     |
TEXT: H| pmos              P type MOSfet model                     |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           Mos1 - model parameters (input-output)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vto               Threshold voltage                       |
TEXT: H| vt0               (null)                                  |
TEXT: H| kp                Transconductance parameter              |
TEXT: H| gamma             Bulk threshold parameter                |
TEXT: H ------------------------------------------------------------
TEXT: H| phi               Surface potential                       |
TEXT: H| lambda            Channel length modulation               |
TEXT: H| rd                Drain ohmic resistance                  |
TEXT: H|                         continued                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|      Mos1 - model input-output parameters - continued
TEXT: H|-----------------------------------------------------------+
TEXT: H| rs                Source ohmic resistance                 |
TEXT: H| cbd               B-D junction capacitance                |
TEXT: H| cbs               B-S junction capacitance                |
TEXT: H| is                Bulk junction sat. current              |
TEXT: H ------------------------------------------------------------
TEXT: H| pb                Bulk junction potential                 |
TEXT: H| cgso              Gate-source overlap cap.                |
TEXT: H| cgdo              Gate-drain overlap cap.                 |
TEXT: H| cgbo              Gate-bulk overlap cap.                  |
TEXT: H|-----------------------------------------------------------+
TEXT: H| rsh               Sheet resistance                        |
TEXT: H| cj                Bottom junction cap per area            |
TEXT: H| mj                Bottom grading coefficient              |
TEXT: H| cjsw              Side junction cap per area              |
TEXT: H ------------------------------------------------------------
TEXT: H| mjsw              Side grading coefficient                |
TEXT: H| js                Bulk jct. sat. current density          |
TEXT: H| tox               Oxide thickness                         |
TEXT: H| ld                Lateral diffusion                       |
TEXT: H|-----------------------------------------------------------+
TEXT: H| u0                Surface mobility                        |
TEXT: H| uo                (null)                                  |
TEXT: H| fc                Forward bias jct. fit parm.             |
TEXT: H| nsub              Substrate doping                        |
TEXT: H ------------------------------------------------------------
TEXT: H| tpg               Gate type                               |
TEXT: H| nss               Surface state density                   |
TEXT: H| tnom              Parameter measurement temperature       |
TEXT: H| kf                Flicker noise coefficient               |
TEXT: H| af                Flicker noise exponent                  |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           Mos1 - model parameters (output-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| type              N-channel or P-channel MOS              |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: Mos2
TITLE: Mos2:  Level 2 MOSfet model with Meyer capacitance model
TEXT: H
TEXT: H B.18.  Mos2:  Level 2 MOSfet model  with  Meyer  capacitance
TEXT: H model
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          Mos2 - instance parameters (input-only)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| off               Device initially off                    |
TEXT: H| ic                Vector of D-S, G-S, B-S voltages        |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         Mos2 - instance parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| l                 Length                                  |
TEXT: H| w                 Width                                   |
TEXT: H| ad                Drain area                              |
TEXT: H| as                Source area                             |
TEXT: H ------------------------------------------------------------
TEXT: H| pd                Drain perimeter                         |
TEXT: H| ps                Source perimeter                        |
TEXT: H| nrd               Drain squares                           |
TEXT: H| nrs               Source squares                          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| icvds             Initial D-S voltage                     |
TEXT: H| icvgs             Initial G-S voltage                     |
TEXT: H| icvbs             Initial B-S voltage                     |
TEXT: H| temp              Instance operating temperature          |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          Mos2 - instance parameters (output-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| id                Drain current                           |
TEXT: H| cd                                                        |
TEXT: H| ibd               B-D junction current                    |
TEXT: H| ibs               B-S junction current                    |
TEXT: H ------------------------------------------------------------
TEXT: H| is                Source current                          |
TEXT: H| ig                Gate current                            |
TEXT: H| ib                Bulk current                            |
TEXT: H| vgs               Gate-Source voltage                     |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vds               Drain-Source voltage                    |
TEXT: H| vbs               Bulk-Source voltage                     |
TEXT: H| vbd               Bulk-Drain voltage                      |
TEXT: H| dnode             Number of drain node                    |
TEXT: H ------------------------------------------------------------
TEXT: H| gnode             Number of gate node                     |
TEXT: H| snode             Number of source node                   |
TEXT: H| bnode             Number of bulk node                     |
TEXT: H| dnodeprime        Number of internal drain node           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| snodeprime        Number of internal source node          |
TEXT: H| von                                                       |
TEXT: H| vdsat             Saturation drain voltage                |
TEXT: H| sourcevcrit       Critical source voltage                 |
TEXT: H| drainvcrit        Critical drain voltage                  |
TEXT: H|                         continued                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H --------------------------------------------------------------
TEXT: H|      Mos2 - instance output-only parameters - continued
TEXT: H|-------------------------------------------------------------+
TEXT: H|rs               Source resistance                           |
TEXT: H|sourceconductanceSource conductance                          |
TEXT: H|rd               Drain resistance                            |
TEXT: H|drainconductance Drain conductance                           |
TEXT: H --------------------------------------------------------------
TEXT: H|gm               Transconductance                            |
TEXT: H|gds              Drain-Source conductance                    |
TEXT: H|gmb              Bulk-Source transconductance                |
TEXT: H|gmbs                                                         |
TEXT: H|-------------------------------------------------------------+
TEXT: H|gbd              Bulk-Drain conductance                      |
TEXT: H|gbs              Bulk-Source conductance                     |
TEXT: H|cbd              Bulk-Drain capacitance                      |
TEXT: H|cbs              Bulk-Source capacitance                     |
TEXT: H --------------------------------------------------------------
TEXT: H|cgs              Gate-Source capacitance                     |
TEXT: H|cgd              Gate-Drain capacitance                      |
TEXT: H|cgb              Gate-Bulk capacitance                       |
TEXT: H|cbd0             Zero-Bias B-D junction capacitance          |
TEXT: H|-------------------------------------------------------------+
TEXT: H|cbdsw0                                                       |
TEXT: H|cbs0             Zero-Bias B-S junction capacitance          |
TEXT: H|cbssw0                                                       |
TEXT: H cqgs             Capacitance due to gate-source charge storage
TEXT: H|                                                             |
TEXT: H --------------------------------------------------------------
TEXT: H|cqgd             Capacitance due to gate-drain charge storage|
TEXT: H|cqgb             Capacitance due to gate-bulk charge storage |
TEXT: H|cqbd             Capacitance due to bulk-drain charge storage|
TEXT: H|cqbs             Capacitance due to bulk-source charge storage
TEXT: H|-------------------------------------------------------------+
TEXT: H|qgs              Gate-Source charge storage                  |
TEXT: H|qgd              Gate-Drain charge storage                   |
TEXT: H|qgb              Gate-Bulk charge storage                    |
TEXT: H|qbd              Bulk-Drain charge storage                   |
TEXT: H|qbs              Bulk-Source charge storage                  |
TEXT: H|p                Instantaneous power                         |
TEXT: H --------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|            Mos2 - model parameters (input-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| nmos              N type MOSfet model                     |
TEXT: H| pmos              P type MOSfet model                     |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           Mos2 - model parameters (input-output)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vto               Threshold voltage                       |
TEXT: H| vt0               (null)                                  |
TEXT: H| kp                Transconductance parameter              |
TEXT: H| gamma             Bulk threshold parameter                |
TEXT: H ------------------------------------------------------------
TEXT: H| phi               Surface potential                       |
TEXT: H| lambda            Channel length modulation               |
TEXT: H| rd                Drain ohmic resistance                  |
TEXT: H| rs                Source ohmic resistance                 |
TEXT: H|-----------------------------------------------------------+
TEXT: H| cbd               B-D junction capacitance                |
TEXT: H| cbs               B-S junction capacitance                |
TEXT: H| is                Bulk junction sat. current              |
TEXT: H| pb                Bulk junction potential                 |
TEXT: H ------------------------------------------------------------
TEXT: H| cgso              Gate-source overlap cap.                |
TEXT: H| cgdo              Gate-drain overlap cap.                 |
TEXT: H| cgbo              Gate-bulk overlap cap.                  |
TEXT: H| rsh               Sheet resistance                        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| cj                Bottom junction cap per area            |
TEXT: H| mj                Bottom grading coefficient              |
TEXT: H| cjsw              Side junction cap per area              |
TEXT: H| mjsw              Side grading coefficient                |
TEXT: H ------------------------------------------------------------
TEXT: H| js                Bulk jct. sat. current density          |
TEXT: H| tox               Oxide thickness                         |
TEXT: H| ld                Lateral diffusion                       |
TEXT: H| u0                Surface mobility                        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| uo                (null)                                  |
TEXT: H| fc                Forward bias jct. fit parm.             |
TEXT: H| nsub              Substrate doping                        |
TEXT: H| tpg               Gate type                               |
TEXT: H ------------------------------------------------------------
TEXT: H| nss               Surface state density                   |
TEXT: H| delta             Width effect on threshold               |
TEXT: H| uexp              Crit. field exp for mob. deg.           |
TEXT: H| ucrit             Crit. field for mob. degradation        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vmax              Maximum carrier drift velocity          |
TEXT: H| xj                Junction depth                          |
TEXT: H| neff              Total channel charge coeff.             |
TEXT: H| nfs               Fast surface state density              |
TEXT: H ------------------------------------------------------------
TEXT: H| tnom              Parameter measurement temperature       |
TEXT: H| kf                Flicker noise coefficient               |
TEXT: H| af                Flicker noise exponent                  |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           Mos2 - model parameters (output-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| type              N-channel or P-channel MOS              |
TEXT: H ------------------------------------------------------------

SUBJECT: Mos3
TITLE: Mos3:  Level 3 MOSfet model with Meyer capacitance model
TEXT: H
TEXT: H B.19.  Mos3:  Level 3 MOSfet model  with  Meyer  capacitance
TEXT: H model
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          Mos3 - instance parameters (input-only)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| off               Device initially off                    |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         Mos3 - instance parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| l                 Length                                  |
TEXT: H| w                 Width                                   |
TEXT: H| ad                Drain area                              |
TEXT: H| as                Source area                             |
TEXT: H ------------------------------------------------------------
TEXT: H| pd                Drain perimeter                         |
TEXT: H| ps                Source perimeter                        |
TEXT: H| nrd               Drain squares                           |
TEXT: H| nrs               Source squares                          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| icvds             Initial D-S voltage                     |
TEXT: H| icvgs             Initial G-S voltage                     |
TEXT: H| icvbs             Initial B-S voltage                     |
TEXT: H| ic                Vector of D-S, G-S, B-S voltages        |
TEXT: H| temp              Instance operating temperature          |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          Mos3 - instance parameters (output-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| id                Drain current                           |
TEXT: H| cd                Drain current                           |
TEXT: H| ibd               B-D junction current                    |
TEXT: H| ibs               B-S junction current                    |
TEXT: H ------------------------------------------------------------
TEXT: H| is                Source current                          |
TEXT: H| ig                Gate current                            |
TEXT: H| ib                Bulk current                            |
TEXT: H| vgs               Gate-Source voltage                     |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vds               Drain-Source voltage                    |
TEXT: H| vbs               Bulk-Source voltage                     |
TEXT: H| vbd               Bulk-Drain voltage                      |
TEXT: H| dnode             Number of drain node                    |
TEXT: H ------------------------------------------------------------
TEXT: H| gnode             Number of gate node                     |
TEXT: H| snode             Number of source node                   |
TEXT: H| bnode             Number of bulk node                     |
TEXT: H| dnodeprime        Number of internal drain node           |
TEXT: H| snodeprime        Number of internal source node          |
TEXT: H|                         continued                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H --------------------------------------------------------------
TEXT: H|      Mos3 - instance output-only parameters - continued
TEXT: H|-------------------------------------------------------------+
TEXT: H|von              Turn-on voltage                             |
TEXT: H|vdsat            Saturation drain voltage                    |
TEXT: H|sourcevcrit      Critical source voltage                     |
TEXT: H|drainvcrit       Critical drain voltage                      |
TEXT: H --------------------------------------------------------------
TEXT: H|rs               Source resistance                           |
TEXT: H|sourceconductanceSource conductance                          |
TEXT: H|rd               Drain resistance                            |
TEXT: H|drainconductance Drain conductance                           |
TEXT: H|-------------------------------------------------------------+
TEXT: H|gm               Transconductance                            |
TEXT: H|gds              Drain-Source conductance                    |
TEXT: H|gmb              Bulk-Source transconductance                |
TEXT: H|gmbs             Bulk-Source transconductance                |
TEXT: H --------------------------------------------------------------
TEXT: H|gbd              Bulk-Drain conductance                      |
TEXT: H|gbs              Bulk-Source conductance                     |
TEXT: H|cbd              Bulk-Drain capacitance                      |
TEXT: H|cbs              Bulk-Source capacitance                     |
TEXT: H|-------------------------------------------------------------+
TEXT: H|cgs              Gate-Source capacitance                     |
TEXT: H|cgd              Gate-Drain capacitance                      |
TEXT: H|cgb              Gate-Bulk capacitance                       |
TEXT: H cqgs             Capacitance due to gate-source charge storage
TEXT: H|                                                             |
TEXT: H --------------------------------------------------------------
TEXT: H|cqgd             Capacitance due to gate-drain charge storage|
TEXT: H|cqgb             Capacitance due to gate-bulk charge storage |
TEXT: H|cqbd             Capacitance due to bulk-drain charge storage|
TEXT: H|cqbs             Capacitance due to bulk-source charge storage
TEXT: H|-------------------------------------------------------------+
TEXT: H|cbd0             Zero-Bias B-D junction capacitance          |
TEXT: H|cbdsw0           Zero-Bias B-D sidewall capacitance          |
TEXT: H|cbs0             Zero-Bias B-S junction capacitance          |
TEXT: H|cbssw0           Zero-Bias B-S sidewall capacitance          |
TEXT: H --------------------------------------------------------------
TEXT: H|qbs              Bulk-Source charge storage                  |
TEXT: H|qgs              Gate-Source charge storage                  |
TEXT: H|qgd              Gate-Drain charge storage                   |
TEXT: H|qgb              Gate-Bulk charge storage                    |
TEXT: H|qbd              Bulk-Drain charge storage                   |
TEXT: H|p                Instantaneous power                         |
TEXT: H --------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|            Mos3 - model parameters (input-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| nmos              N type MOSfet model                     |
TEXT: H| pmos              P type MOSfet model                     |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           Mos3 - model parameters (input-output)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vto               Threshold voltage                       |
TEXT: H| vt0               (null)                                  |
TEXT: H| kp                Transconductance parameter              |
TEXT: H| gamma             Bulk threshold parameter                |
TEXT: H ------------------------------------------------------------
TEXT: H| phi               Surface potential                       |
TEXT: H| rd                Drain ohmic resistance                  |
TEXT: H| rs                Source ohmic resistance                 |
TEXT: H| cbd               B-D junction capacitance                |
TEXT: H|-----------------------------------------------------------+
TEXT: H| cbs               B-S junction capacitance                |
TEXT: H| is                Bulk junction sat. current              |
TEXT: H| pb                Bulk junction potential                 |
TEXT: H| cgso              Gate-source overlap cap.                |
TEXT: H ------------------------------------------------------------
TEXT: H| cgdo              Gate-drain overlap cap.                 |
TEXT: H| cgbo              Gate-bulk overlap cap.                  |
TEXT: H| rsh               Sheet resistance                        |
TEXT: H| cj                Bottom junction cap per area            |
TEXT: H|-----------------------------------------------------------+
TEXT: H| mj                Bottom grading coefficient              |
TEXT: H| cjsw              Side junction cap per area              |
TEXT: H| mjsw              Side grading coefficient                |
TEXT: H| js                Bulk jct. sat. current density          |
TEXT: H ------------------------------------------------------------
TEXT: H| tox               Oxide thickness                         |
TEXT: H| ld                Lateral diffusion                       |
TEXT: H| u0                Surface mobility                        |
TEXT: H| uo                (null)                                  |
TEXT: H|-----------------------------------------------------------+
TEXT: H| fc                Forward bias jct. fit parm.             |
TEXT: H| nsub              Substrate doping                        |
TEXT: H| tpg               Gate type                               |
TEXT: H| nss               Surface state density                   |
TEXT: H ------------------------------------------------------------
TEXT: H| vmax              Maximum carrier drift velocity          |
TEXT: H| xj                Junction depth                          |
TEXT: H| nfs               Fast surface state density              |
TEXT: H| xd                Depletion layer width                   |
TEXT: H|-----------------------------------------------------------+
TEXT: H| alpha             Alpha                                   |
TEXT: H| eta               Vds dependence of threshold voltage     |
TEXT: H| delta             Width effect on threshold               |
TEXT: H| input_delta       (null)                                  |
TEXT: H ------------------------------------------------------------
TEXT: H| theta             Vgs dependence on mobility              |
TEXT: H| kappa             Kappa                                   |
TEXT: H| tnom              Parameter measurement temperature       |
TEXT: H| kf                Flicker noise coefficient               |
TEXT: H| af                Flicker noise exponent                  |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           Mos3 - model parameters (output-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| type              N-channel or P-channel MOS              |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: Mos6
TITLE: Mos6:  Level 6 MOSfet model with Meyer capacitance model
TEXT: H
TEXT: H B.20.  Mos6:  Level 6 MOSfet model  with  Meyer  capacitance
TEXT: H model
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          Mos6 - instance parameters (input-only)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| off               Device initially off                    |
TEXT: H| ic                Vector of D-S, G-S, B-S voltages        |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         Mos6 - instance parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| l                 Length                                  |
TEXT: H| w                 Width                                   |
TEXT: H| ad                Drain area                              |
TEXT: H| as                Source area                             |
TEXT: H ------------------------------------------------------------
TEXT: H| pd                Drain perimeter                         |
TEXT: H| ps                Source perimeter                        |
TEXT: H| nrd               Drain squares                           |
TEXT: H| nrs               Source squares                          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| icvds             Initial D-S voltage                     |
TEXT: H| icvgs             Initial G-S voltage                     |
TEXT: H| icvbs             Initial B-S voltage                     |
TEXT: H| temp              Instance temperature                    |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          Mos6 - instance parameters (output-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| id                Drain current                           |
TEXT: H| cd                Drain current                           |
TEXT: H| is                Source current                          |
TEXT: H| ig                Gate current                            |
TEXT: H ------------------------------------------------------------
TEXT: H| ib                Bulk current                            |
TEXT: H| ibs               B-S junction capacitance                |
TEXT: H| ibd               B-D junction capacitance                |
TEXT: H| vgs               Gate-Source voltage                     |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vds               Drain-Source voltage                    |
TEXT: H| vbs               Bulk-Source voltage                     |
TEXT: H| vbd               Bulk-Drain voltage                      |
TEXT: H| dnode             Number of the drain node                |
TEXT: H ------------------------------------------------------------
TEXT: H| gnode             Number of the gate node                 |
TEXT: H| snode             Number of the source node               |
TEXT: H| bnode             Number of the node                      |
TEXT: H| dnodeprime        Number of int. drain node               |
TEXT: H| snodeprime        Number of int. source node              |
TEXT: H|                         continued                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H --------------------------------------------------------------
TEXT: H|      Mos6 - instance output-only parameters - continued
TEXT: H|-------------------------------------------------------------+
TEXT: H|rs               Source resistance                           |
TEXT: H|sourceconductanceSource conductance                          |
TEXT: H|rd               Drain resistance                            |
TEXT: H|drainconductance Drain conductance                           |
TEXT: H --------------------------------------------------------------
TEXT: H|von              Turn-on voltage                             |
TEXT: H|vdsat            Saturation drain voltage                    |
TEXT: H|sourcevcrit      Critical source voltage                     |
TEXT: H|drainvcrit       Critical drain voltage                      |
TEXT: H|-------------------------------------------------------------+
TEXT: H|gmbs             Bulk-Source transconductance                |
TEXT: H|gm               Transconductance                            |
TEXT: H|gds              Drain-Source conductance                    |
TEXT: H|gbd              Bulk-Drain conductance                      |
TEXT: H --------------------------------------------------------------
TEXT: H|gbs              Bulk-Source conductance                     |
TEXT: H|cgs              Gate-Source capacitance                     |
TEXT: H|cgd              Gate-Drain capacitance                      |
TEXT: H|cgb              Gate-Bulk capacitance                       |
TEXT: H|-------------------------------------------------------------+
TEXT: H|cbd              Bulk-Drain capacitance                      |
TEXT: H|cbs              Bulk-Source capacitance                     |
TEXT: H|cbd0             Zero-Bias B-D junction capacitance          |
TEXT: H|cbdsw0                                                       |
TEXT: H --------------------------------------------------------------
TEXT: H|cbs0             Zero-Bias B-S junction capacitance          |
TEXT: H|cbssw0                                                       |
TEXT: H|cqgs             Capacitance due to gate-source charge storage
TEXT: H|cqgd             Capacitance due to gate-drain charge storage|
TEXT: H|-------------------------------------------------------------+
TEXT: H|cqgb             Capacitance due to gate-bulk charge storage |
TEXT: H|cqbd             Capacitance due to bulk-drain charge storage|
TEXT: H cqbs             Capacitance due to bulk-source charge storage
TEXT: H|qgs              Gate-Source charge storage                  |
TEXT: H --------------------------------------------------------------
TEXT: H|qgd              Gate-Drain charge storage                   |
TEXT: H|qgb              Gate-Bulk charge storage                    |
TEXT: H|qbd              Bulk-Drain charge storage                   |
TEXT: H|qbs              Bulk-Source charge storage                  |
TEXT: H|p                Instaneous power                            |
TEXT: H --------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|            Mos6 - model parameters (input-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| nmos              N type MOSfet model                     |
TEXT: H| pmos              P type MOSfet model                     |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           Mos6 - model parameters (input-output)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vto               Threshold voltage                       |
TEXT: H| vt0               (null)                                  |
TEXT: H| kv                Saturation voltage factor               |
TEXT: H| nv                Saturation voltage coeff.               |
TEXT: H ------------------------------------------------------------
TEXT: H| kc                Saturation current factor               |
TEXT: H| nc                Saturation current coeff.               |
TEXT: H| nvth              Threshold voltage coeff.                |
TEXT: H| ps                Sat. current modification  par.         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| gamma             Bulk threshold parameter                |
TEXT: H| gamma1            Bulk threshold parameter 1              |
TEXT: H| sigma             Static feedback effect par.             |
TEXT: H| phi               Surface potential                       |
TEXT: H ------------------------------------------------------------
TEXT: H| lambda            Channel length modulation param.        |
TEXT: H| lambda0           Channel length modulation param. 0      |
TEXT: H| lambda1           Channel length modulation param. 1      |
TEXT: H| rd                Drain ohmic resistance                  |
TEXT: H|-----------------------------------------------------------+
TEXT: H| rs                Source ohmic resistance                 |
TEXT: H| cbd               B-D junction capacitance                |
TEXT: H| cbs               B-S junction capacitance                |
TEXT: H| is                Bulk junction sat. current              |
TEXT: H ------------------------------------------------------------
TEXT: H| pb                Bulk junction potential                 |
TEXT: H| cgso              Gate-source overlap cap.                |
TEXT: H| cgdo              Gate-drain overlap cap.                 |
TEXT: H| cgbo              Gate-bulk overlap cap.                  |
TEXT: H|-----------------------------------------------------------+
TEXT: H| rsh               Sheet resistance                        |
TEXT: H| cj                Bottom junction cap per area            |
TEXT: H| mj                Bottom grading coefficient              |
TEXT: H| cjsw              Side junction cap per area              |
TEXT: H ------------------------------------------------------------
TEXT: H| mjsw              Side grading coefficient                |
TEXT: H| js                Bulk jct. sat. current density          |
TEXT: H| ld                Lateral diffusion                       |
TEXT: H| tox               Oxide thickness                         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| u0                Surface mobility                        |
TEXT: H| uo                (null)                                  |
TEXT: H| fc                Forward bias jct. fit parm.             |
TEXT: H| tpg               Gate type                               |
TEXT: H ------------------------------------------------------------
TEXT: H| nsub              Substrate doping                        |
TEXT: H| nss               Surface state density                   |
TEXT: H| tnom              Parameter measurement temperature       |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           Mos6 - model parameters (output-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| type              N-channel or P-channel MOS              |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: Resistor
TITLE: Resistor:  Simple linear resistor
TEXT: H
TEXT: H B.21.  Resistor:  Simple linear resistor
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|       Resistor - instance parameters (input-output)       |
TEXT: H|-----------------------------------------------------------+
TEXT: H| resistance        Resistance                              |
TEXT: H| temp              Instance operating temperature          |
TEXT: H| l                 Length                                  |
TEXT: H| w                 Width                                   |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|        Resistor - instance parameters (output-only)       |
TEXT: H|-----------------------------------------------------------+
TEXT: H| i                 Current                                 |
TEXT: H| p                 Power                                   |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          Resistor - model parameters (input-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| r                 Device is a resistor model              |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         Resistor - model parameters (input-output)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| rsh               Sheet resistance                        |
TEXT: H| narrow            Narrowing of resistor                   |
TEXT: H| tc1               First order temp. coefficient           |
TEXT: H| tc2               Second order temp. coefficient          |
TEXT: H| defw              Default device width                    |
TEXT: H| tnom              Parameter measurement temperature       |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: Switch
TITLE: Switch:  Ideal voltage controlled switch
TEXT: H
TEXT: H B.22.  Switch:  Ideal voltage controlled switch
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         Switch - instance parameters (input-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| on                Switch initially closed                 |
TEXT: H| off               Switch initially open                   |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|        Switch - instance parameters (input-output)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pos_node          Positive node of switch                 |
TEXT: H| neg_node          Negative node of switch                 |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         Switch - instance parameters (output-only)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| cont_p_node       Positive contr. node of switch          |
TEXT: H| cont_n_node       Positive contr. node of switch          |
TEXT: H| i                 Switch current                          |
TEXT: H| p                 Switch power                            |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          Switch - model parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| sw                Switch model                            |
TEXT: H| vt                Threshold voltage                       |
TEXT: H| vh                Hysteresis voltage                      |
TEXT: H| ron               Resistance when closed                  |
TEXT: H| roff              Resistance when open                    |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          Switch - model parameters (output-only)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| gon               Conductance when closed                 |
TEXT: H| goff              Conductance when open                   |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: Tranline
TITLE: Tranline:  Lossless transmission line
TEXT: H
TEXT: H B.23.  Tranline:  Lossless transmission line
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|        Tranline - instance parameters (input-only)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ic                Initial condition vector:v1,i1,v2,i2    |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|       Tranline - instance parameters (input-output)       |
TEXT: H|-----------------------------------------------------------+
TEXT: H| z0                Characteristic impedance                |
TEXT: H| zo                (null)                                  |
TEXT: H| f                 Frequency                               |
TEXT: H| td                Transmission delay                      |
TEXT: H ------------------------------------------------------------
TEXT: H| nl                Normalized length at frequency given    |
TEXT: H| v1                Initial voltage at end 1                |
TEXT: H| v2                Initial voltage at end 2                |
TEXT: H| i1                Initial current at end 1                |
TEXT: H| i2                Initial current at end 2                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|        Tranline - instance parameters (output-only)       |
TEXT: H|-----------------------------------------------------------+
TEXT: H| rel               Rel. rate of change of deriv. for bkpt  |
TEXT: H| abs               Abs. rate of change of deriv. for bkpt  |
TEXT: H| pos_node1         Positive node of end 1 of t. line       |
TEXT: H| neg_node1         Negative node of end 1 of t. line       |
TEXT: H ------------------------------------------------------------
TEXT: H| pos_node2         Positive node of end 2 of t. line       |
TEXT: H| neg_node2         Negative node of end 2 of t. line       |
TEXT: H| delays            Delayed values of excitation            |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: VCCS
TITLE: VCCS:  Voltage controlled current source
TEXT: H
TEXT: H B.24.  VCCS:  Voltage controlled current source
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          VCCS - instance parameters (input-only)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ic                Initial condition of controlling source |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         VCCS - instance parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| gain              Transconductance of source (gain)       |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          VCCS - instance parameters (output-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pos_node          Positive node of source                 |
TEXT: H| neg_node          Negative node of source                 |
TEXT: H| cont_p_node       Positive node of contr. source          |
TEXT: H| cont_n_node       Negative node of contr. source          |
TEXT: H ------------------------------------------------------------
TEXT: H| i                 Output current                          |
TEXT: H| v                 Voltage across output                   |
TEXT: H| p                 Power                                   |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: VCVS
TITLE: VCVS:  Voltage controlled voltage source
TEXT: H
TEXT: H B.25.  VCVS:  Voltage controlled voltage source
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          VCVS - instance parameters (input-only)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ic                Initial condition of controlling source |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         VCVS - instance parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| gain              Voltage gain                            |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          VCVS - instance parameters (output-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pos_node          Positive node of source                 |
TEXT: H| neg_node          Negative node of source                 |
TEXT: H| cont_p_node       Positive node of contr. source          |
TEXT: H  cont_n_node       Negative node of contr. source
TEXT: H ------------------------------------------------------------
TEXT: H| i                 Output current                          |
TEXT: H| v                 Output voltage                          |
TEXT: H| p                 Power                                   |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: Vsource
TITLE: Vsource:  Independent voltage source
TEXT: H
TEXT: H B.26.  Vsource:  Independent voltage source
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         Vsource - instance parameters (input-only)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pulse             Pulse description                       |
TEXT: H| sine              Sinusoidal source description           |
TEXT: H| sin               Sinusoidal source description           |
TEXT: H| exp               Exponential source description          |
TEXT: H ------------------------------------------------------------
TEXT: H| pwl               Piecewise linear description            |
TEXT: H| sffm              Single freq. FM descripton              |
TEXT: H| ac                AC magnitude, phase vector              |
TEXT: H| distof1           f1 input for distortion                 |
TEXT: H| distof2           f2 input for distortion                 |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|        Vsource - instance parameters (input-output)       |
TEXT: H|-----------------------------------------------------------+
TEXT: H| dc                D.C. source value                       |
TEXT: H| acmag             A.C. Magnitude                          |
TEXT: H| acphase           A.C. Phase                              |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|        Vsource - instance parameters (output-only)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pos_node          Positive node of source                 |
TEXT: H| neg_node          Negative node of source                 |
TEXT: H| function          Function of the source                  |
TEXT: H| order             Order of the source function            |
TEXT: H ------------------------------------------------------------
TEXT: H| coeffs            Coefficients for the function           |
TEXT: H| acreal            AC real part                            |
TEXT: H| acimag            AC imaginary part                       |
TEXT: H| i                 Voltage source current                  |
TEXT: H| p                 Instantaneous power                     |
TEXT: H ------------------------------------------------------------

